RN4907FE,LF(CT Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The RN4907FE,LF(CT is a pre-biased dual bipolar transistor manufactured by Toshiba Semiconductor and Storage, configured as 1 NPN and 1 PNP transistor pair in a single surface mount package. This component is classified as Active product status and is designed for applications requiring integrated bias resistor networks to simplify circuit design and reduce component count. The part is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts are necessary when the primary part experiences supply constraints, extended lead times, or when design requirements call for alternative transistor configurations or performance characteristics within the same functional category.

Key Parameters

Parameter	RN4907FE,LF(CT	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	Configuration
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	47	kOhms
DC Current Gain (hFE) Min @ Ic, Vce	80 @ 10mA, 5V	-
Vce Saturation (Max) @ Ib, Ic	300 @ 250µA, 5mA	mV
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	250, 200	MHz
Power - Max	100	mW
Package / Case	SOT-563, SOT-666	-
Mounting Type	Surface Mount	-
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution of the RN4907FE,LF(CT is determined by the following critical parameters:

Configuration Match: The primary part is a 1 NPN, 1 PNP dual pre-biased transistor. Substitute parts must maintain compatible transistor type configurations. Parts with 2 NPN configuration (DDC114EH-7, DDC114TH-7, DDC114YH-7, DDC143EH-7, DDC144EH-7, NSBC114YDXV6T1G, NSBC114YDXV6T5G, NSVBC114YDXV6T1G) represent functional alternatives for applications requiring dual NPN operation but differ in internal configuration.

Electrical Ratings: All substitute parts maintain 50V collector-emitter breakdown voltage and 100mA maximum collector current, matching the primary part's voltage and current handling capability.

Bias Resistor Networks: The RN4907FE,LF(CT incorporates 10kOhms base resistor (R1) and 47kOhms emitter-base resistor (R2). Substitute parts with identical resistor values (DDC114YH-7, NSBC114YDXV6T1G, NSBC114YDXV6T5G, NSVBC114YDXV6T1G) provide direct functional equivalence. Parts with alternative resistor values (DDC114EH-7 with 10kOhms/10kOhms, DDC143EH-7 with 4.7kOhms/4.7kOhms, DDC144EH-7 with 47kOhms/47kOhms) serve applications with different biasing requirements.

Package Compatibility: All listed substitute parts are available in SOT-563 and SOT-666 surface mount packages, maintaining mechanical and thermal compatibility.

Power Dissipation: The RN4907FE,LF(CT is rated at 100mW maximum power. Substitute parts rated at 150mW (Diodes Incorporated DDC series) or 500mW (onsemi EMD and NSBC series) provide equal or superior thermal performance.

Frequency Performance: The RN4907FE,LF(CT operates at 250MHz and 200MHz transition frequency. Substitute parts with 250MHz transition frequency maintain equivalent high-frequency performance.

Parameter Comparison

Parameter	RN4907FE,LF(CT	DDC114EH-7	DDC114TH-7	DDC114YH-7	DDC143EH-7	DDC144EH-7	EMD4DXV6T1G	EMD4DXV6T5G	NSBC114YDXV6T1G	NSBC114YDXV6T5G	NSVBC114YDXV6T1G
Manufacturer	Toshiba	Diodes Inc.	Diodes Inc.	Diodes Inc.	Diodes Inc.	Diodes Inc.	onsemi	onsemi	Fairchild	onsemi	onsemi
Transistor Type	1 NPN, 1 PNP	2 NPN	2 NPN	2 NPN	2 NPN	2 NPN	1 NPN, 1 PNP	1 NPN, 1 PNP	2 NPN	2 NPN	2 NPN
Ic (Max) [mA]	100	100	100	100	100	100	100	100	100	100	100
Vce Breakdown (Max) [V]	50	50	50	50	50	50	50	50	50	50	50
R1 (Base) [kOhms]	10	10	10	10	4.7	47	47, 10	47, 10	10	10	10
R2 (Emitter Base) [kOhms]	47	10	-	47	4.7	47	47	47	47	47	47
hFE (Min) @ Ic, Vce	80 @ 10mA, 5V	30 @ 5mA, 5V	100 @ 1mA, 5V	68 @ 10mA, 5V	20 @ 10mA, 5V	68 @ 5mA, 5V	80 @ 5mA, 10V	80 @ 5mA, 10V	80 @ 5mA, 10V	80 @ 5mA, 10V	80 @ 5mA, 10V
Vce Saturation (Max) [mV]	300	300	300	300	300	300	250	250	250	250	250
Ic Cutoff (Max) [nA]	500	500	-	500	500	500	500	500	500	500	500
Frequency - Transition [MHz]	250, 200	250	250	250	250	250	-	-	-	-	-
Power - Max [mW]	100	150	150	150	150	150	500	500	500	500	500
Package	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	-	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active	Active	Active	Active	Obsolete	Active	Obsolete	Active

Engineering Selection Recommendations

Direct Functional Equivalents (1 NPN, 1 PNP Configuration)

EMD4DXV6T1G (onsemi) and EMD4DXV6T5G (onsemi) maintain the identical 1 NPN, 1 PNP dual transistor configuration as the RN4907FE,LF(CT. Both parts are ROHS3 compliant with MSL 1 rating. EMD4DXV6T1G is Active product status, while EMD4DXV6T5G is Obsolete. The EMD4DXV6T1G provides superior power dissipation at 500mW versus the primary part's 100mW, with lower saturation voltage (250mV versus 300mV). Both incorporate 47kOhms emitter-base resistor matching the primary part. EMD4DXV6T1G is the preferred selection for new designs requiring NPN/PNP dual configuration.

Dual NPN Alternatives with Matching Bias Network (10kOhms/47kOhms)

DDC114YH-7 (Diodes Incorporated) and NSVBC114YDXV6T1G (onsemi) provide 2 NPN pre-biased configuration with identical 10kOhms base resistor and 47kOhms emitter-base resistor values. Both are Active product status and ROHS3 compliant. DDC114YH-7 offers 150mW power rating with 250MHz transition frequency. NSVBC114YDXV6T1G provides 500mW power rating with improved saturation voltage (250mV). These parts are suitable for applications where dual NPN operation replaces the NPN/PNP configuration.

Alternative Bias Network Options

DDC114EH-7 (Diodes Incorporated) features 10kOhms/10kOhms resistor configuration, suitable for applications requiring lower base impedance. DDC144EH-7 (Diodes Incorporated) incorporates 47kOhms/47kOhms resistor network, appropriate for high-impedance biasing requirements. DDC143EH-7 (Diodes Incorporated) provides 4.7kOhms/4.7kOhms configuration for applications requiring aggressive biasing. All three are Active product status with 150mW power rating and ROHS3 compliance.

Obsolete Part Avoidance

EMD4DXV6T5G and NSBC114YDXV6T5G are designated Obsolete product status. While inventory is available, these parts should not be selected for new designs or long-term production applications.

Frequently Asked Questions (FAQ)

Q: Can DDC114YH-7 directly replace RN4907FE,LF(CT in all applications?

A: DDC114YH-7 is a 2 NPN pre-biased transistor, whereas RN4907FE,LF(CT is 1 NPN, 1 PNP. Direct replacement is possible only in circuits requiring dual NPN operation. Applications specifically designed for complementary NPN/PNP functionality require EMD4DXV6T1G or equivalent NPN/PNP configuration parts.

Q: What is the significance of the bias resistor values (R1 and R2)?

A: R1 (base resistor) and R2 (emitter-base resistor) determine the transistor's biasing characteristics and switching speed. The RN4907FE,LF(CT uses 10kOhms/47kOhms. Substitute parts with identical resistor values (DDC114YH-7, NSVBC114YDXV6T1G) provide equivalent biasing behavior. Parts with different resistor values alter the transistor's gain and switching characteristics and should be selected only when circuit design accommodates these differences.

Q: Are all substitute parts available in the same package?

A: All listed substitute parts are available in SOT-563 and SOT-666 surface mount packages, maintaining mechanical compatibility with the RN4907FE,LF(CT. PCB footprints and thermal characteristics remain consistent across all listed alternatives.

Q: What is the difference between Active and Obsolete product status?

A: Active product status indicates the part is in current production with ongoing manufacturer support and availability. Obsolete product status indicates the part is no longer manufactured, though existing inventory may be available. New designs should utilize only Active product status parts to ensure long-term supply chain reliability.

Q: How does power dissipation rating affect part selection?

A: The RN4907FE,LF(CT is rated at 100mW maximum power dissipation. Substitute parts with higher power ratings (150mW or 500mW) provide superior thermal performance and margin in applications approaching the primary part's power limits. Higher power ratings do not negatively impact performance in lower-power applications.

Q: What is the importance of ROHS3 compliance?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead and other hazardous materials. All listed substitute parts maintain ROHS3 compliance, ensuring regulatory compatibility with modern manufacturing and environmental standards.

Q: Can EMD4DXV6T5G be used in new production designs?

A: EMD4DXV6T5G is designated Obsolete product status and should not be selected for new designs. Although inventory is currently available, obsolete parts present supply chain risk for long-term production. EMD4DXV6T1G (Active status) is the appropriate selection for new designs requiring onsemi NPN/PNP dual configuration.

Q: How do transition frequency specifications affect circuit performance?

A: The RN4907FE,LF(CT operates at 250MHz and 200MHz transition frequency. Substitute parts with 250MHz transition frequency (DDC114 series, DDC143EH-7, DDC144EH-7) maintain equivalent high-frequency performance. Parts without specified transition frequency data (EMD4DXV6 series, NSBC/NSVBC series) are suitable for applications where transition frequency is not a critical design parameter.

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