RN4906,LF Equivalent & Substitute Parts

Part Overview

The RN4906,LF is a pre-biased dual bipolar transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount component integrates one NPN and one PNP transistor with internal biasing resistors in a 6-TSSOP (US6) package. The device is rated for 50V collector-emitter breakdown voltage, 100mA maximum collector current, and 200mW power dissipation. The RN4906,LF maintains active product status with ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1). Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and functional equivalence to support design flexibility and supply chain continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	4.7	kOhms
Resistor - Emitter Base (R2)	47	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300	mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	200	MHz
Power - Max	200	mW
Package / Case	6-TSSOP, SC-88, SOT-363	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the RN4906,LF are qualified based on the following electrical and mechanical parameters:

Critical Matching Parameters:

Maximum collector current: 100mA
Collector-emitter breakdown voltage: 50V
Internal base resistor (R1): 4.7kOhms
Internal emitter-base resistor (R2): 47kOhms
DC current gain (hFE) minimum: 80 or greater
Collector cutoff current: 500nA or less
Surface mount package compatibility: 6-TSSOP, SC-88, SOT-363
RoHS3 compliance
MSL 1 rating

Substitution Logic:

Substitute parts are grouped into two functional categories:

Dual NPN/PNP Configuration (Direct Functional Equivalents): Parts maintaining the 1 NPN + 1 PNP pre-biased transistor pair topology with identical internal resistor values. These include DCX143ZU-7-F, PUMD13,135, and PUMD13,115.
Dual NPN Configuration (Functional Alternatives): Parts with 2 NPN pre-biased transistors instead of mixed NPN/PNP. These include MUN5233DW1T1G, NSVMUN5233DW1T3G, SMUN5233DW1T1G, and PUMH13,115. These parts are suitable for applications requiring dual NPN functionality and are compatible with the same package footprint.

All substitute parts maintain the 50V voltage rating, 100mA current rating, 4.7kOhms base resistor, and 47kOhms emitter-base resistor specifications. Variations in power dissipation (200mW to 300mW), transition frequency (where specified), and saturation voltage are within acceptable engineering tolerances for pre-biased BJT applications.

Parameter Comparison

Parameter	RN4906,LF (Toshiba)	DCX143ZU-7-F (Diodes)	MUN5233DW1T1G (onsemi)	NSVMUN5233DW1T3G (onsemi)	PUMD13,135 (Nexperia)	PUMD13,115 (Nexperia)	PUMH13,115 (Nexperia)	SMUN5233DW1T1G (onsemi)
Transistor Type	1 NPN, 1 PNP	1 NPN, 1 PNP	2 NPN	2 NPN	1 NPN, 1 PNP	1 NPN, 1 PNP	2 NPN	2 NPN
Ic (Max)	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA
Vce Breakdown (Max)	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V
R1 (Base)	4.7 kOhms	4.7 kOhms	4.7 kOhms	4.7 kOhms	4.7 kOhms	4.7 kOhms	4.7 kOhms	4.7 kOhms
R2 (Emitter-Base)	47 kOhms	47 kOhms	47 kOhms	47 kOhms	47 kOhms	47 kOhms	47 kOhms	47 kOhms
hFE (Min) @ Ic, Vce	80 @ 10mA, 5V	80 @ 10mA, 5V	80 @ 5mA, 10V	80 @ 5mA, 10V	100 @ 10mA, 5V	100 @ 10mA, 5V	100 @ 10mA, 5V	80 @ 5mA, 10V
Vce Saturation (Max)	300 mV @ 250µA, 5mA	300 mV @ 250µA, 5mA	250 mV @ 1mA, 10mA	250 mV @ 1mA, 10mA	100 mV @ 250µA, 5mA	100 mV @ 250µA, 5mA	100 mV @ 250µA, 5mA	250 mV @ 1mA, 10mA
Ic Cutoff (Max)	500 nA	500 nA	500 nA	500 nA	1 µA	1 µA	1 µA	500 nA
Frequency - Transition	200 MHz	250 MHz	—	—	—	—	—	—
Power - Max	200 mW	200 mW	250 mW	250 mW	300 mW	300 mW	300 mW	187 mW
Package	6-TSSOP (US6)	SOT-363	SC-88/SC70-6/SOT-363	SC-88/SC70-6/SOT-363	6-TSSOP	6-TSSOP	6-TSSOP	SC-88/SC70-6/SOT-363
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Automotive Grade	—	Yes (AEC-Q101)	—	Yes (AEC-Q101)	—	—	—	Yes (AEC-Q101)

Engineering Selection Recommendations

Direct Functional Equivalents (1 NPN + 1 PNP Configuration):

DCX143ZU-7-F (Diodes Incorporated): Maintains identical electrical specifications to RN4906,LF with 50V/100mA ratings and matching internal resistor values. Offers higher transition frequency (250MHz vs. 200MHz). Qualifies for automotive applications with AEC-Q101 certification. Available in SOT-363 package compatible with 6-TSSOP footprint.
PUMD13,135 and PUMD13,115 (Nexperia USA Inc.): Both parts provide 1 NPN + 1 PNP configuration with identical voltage and current ratings. Feature improved saturation voltage (100mV vs. 300mV) and higher power rating (300mW vs. 200mW). Supplied in 6-TSSOP package. Both are active products with ROHS3 compliance and unlimited MSL rating.

Functional Alternatives (2 NPN Configuration):

MUN5233DW1T1G (onsemi): Dual NPN pre-biased transistor with 50V/100mA ratings and matching internal resistor values. Provides higher power dissipation (250mW). Suitable for applications requiring dual NPN functionality. Available in SC-88/SC70-6/SOT-363 package.
NSVMUN5233DW1T3G (onsemi): Dual NPN configuration with automotive-grade qualification (AEC-Q101). Identical electrical specifications to MUN5233DW1T1G. Recommended for automotive applications requiring dual NPN transistor pairs.
SMUN5233DW1T1G (onsemi): Dual NPN pre-biased transistor with automotive-grade qualification (AEC-Q101). Lowest power dissipation (187mW) among dual NPN options. Maintains 50V/100mA ratings and matching internal resistor values.
PUMH13,115 (Nexperia USA Inc.): Dual NPN configuration with 50V/100mA ratings and 300mW power dissipation. Provides improved saturation voltage (100mV) and higher current gain (hFE 100 min). Supplied in 6-TSSOP package.

Selection Criteria:

For direct pin-compatible replacement with identical NPN/PNP topology: Select DCX143ZU-7-F, PUMD13,135, or PUMD13,115.
For automotive applications: Select DCX143ZU-7-F, NSVMUN5233DW1T3G, or SMUN5233DW1T1G (all AEC-Q101 qualified).
For dual NPN functionality: Select MUN5233DW1T1G, NSVMUN5233DW1T3G, SMUN5233DW1T1G, or PUMH13,115.
For improved saturation performance: Select PUMD13,135, PUMD13,115, or PUMH13,115 (100mV saturation voltage).
For maximum power dissipation headroom: Select PUMD13,135, PUMD13,115, or PUMH13,115 (300mW rating).

All substitute parts maintain active product status, ROHS3 compliance, and unlimited moisture sensitivity rating (MSL 1).

Frequently Asked Questions (FAQ)

Q: Can I substitute the RN4906,LF with a dual NPN part like MUN5233DW1T1G?

A: Yes, for applications requiring dual NPN functionality. The MUN5233DW1T1G maintains identical voltage (50V), current (100mA), and internal resistor specifications (4.7kOhms base, 47kOhms emitter-base). However, the RN4906,LF provides one NPN and one PNP transistor, while MUN5233DW1T1G provides two NPN transistors. Substitution is valid only if your circuit design does not require the PNP transistor functionality.

Q: What is the difference between the 6-TSSOP and SOT-363 packages?

A: Both 6-TSSOP (US6) and SOT-363 are six-pin surface mount packages with identical pin pitch and footprint compatibility. The designations refer to different naming conventions used by manufacturers. Parts specified as 6-TSSOP, SC-88, or SOT-363 are mechanically and electrically interchangeable on the same PCB layout.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (DCX143ZU-7-F, MUN5233DW1T1G, NSVMUN5233DW1T3G, PUMD13,135, PUMD13,115, PUMH13,115, and SMUN5233DW1T1G) are ROHS3 compliant with unlimited moisture sensitivity rating (MSL 1), matching the RN4906,LF specification.

Q: Which substitute parts are qualified for automotive applications?

A: Three substitute parts carry automotive-grade qualification with AEC-Q101 certification: DCX143ZU-7-F (Diodes Incorporated), NSVMUN5233DW1T3G (onsemi), and SMUN5233DW1T1G (onsemi). These parts are suitable for automotive circuit designs requiring qualified components.

Q: What is the significance of the internal resistor values (R1 = 4.7kOhms, R2 = 47kOhms)?

A: The internal base resistor (R1) and emitter-base resistor (R2) determine the pre-biasing characteristics of the transistor pair. All substitute parts maintain identical resistor values to the RN4906,LF, ensuring equivalent biasing behavior and circuit performance. Variations in these resistor values would require circuit re-evaluation.

Q: Can I use PUMD13,135 as a direct replacement for RN4906,LF?

A: Yes. The PUMD13,135 maintains the 1 NPN + 1 PNP configuration with identical voltage (50V), current (100mA), and internal resistor specifications. It offers improved saturation voltage (100mV vs. 300mV) and higher power rating (300mW vs. 200mW). Both parts are supplied in compatible 6-TSSOP packages and are ROHS3 compliant with MSL 1 rating.

Q: What does the transition frequency specification indicate?

A: Transition frequency (fT) indicates the frequency at which the transistor's current gain drops to unity. The RN4906,LF specifies 200MHz, while DCX143ZU-7-F specifies 250MHz. Higher transition frequency indicates faster switching capability. For most pre-biased BJT applications, both specifications are adequate. Substitution is valid if your circuit operates below the specified transition frequency.

Q: Are there differences in saturation voltage between substitute parts?

A: Yes. The RN4906,LF and DCX143ZU-7-F specify 300mV saturation voltage at 250µA base current and 5mA collector current. The onsemi dual NPN parts (MUN5233DW1T1G, NSVMUN5233DW1T3G, SMUN5233DW1T1G) specify 250mV at 1mA base current and 10mA collector current. The Nexperia parts (PUMD13,135, PUMD13,115, PUMH13,115) specify 100mV at 250µA base current and 5mA collector current. Lower saturation voltage indicates better switching performance in saturated applications.

Q: What is the difference between MUN5233DW1T1G and NSVMUN5233DW1T3G?

A: Both parts are dual NPN pre-biased transistors with identical electrical specifications (50V, 100mA, 4.7kOhms base resistor, 47kOhms emitter-base resistor). The primary difference is that NSVMUN5233DW1T3G carries automotive-grade qualification (AEC-Q101), making it suitable for automotive applications. NSVMUN5233DW1T3G is supplied in Tape & Reel packaging, while MUN5233DW1T1G is supplied in Cut Tape & Digi-Reel packaging.

Q: Can I use a part with higher power rating (300mW) instead of 200mW?

A: Yes. Parts with higher power ratings (PUMD13,135, PUMD13,115, PUMH13,115 at 300mW) provide additional thermal headroom and are suitable for applications where the RN4906,LF (200mW) operates near its power limit. Higher power rating does not negatively impact circuit performance and provides design margin for thermal management.

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