RN4902,LF Equivalent & Substitute Parts

Part Overview

The RN4902,LF is a pre-biased dual bipolar transistor (1 NPN, 1 PNP) manufactured by Toshiba Semiconductor and Storage in a 6-TSSOP (SC-88, SOT-363) surface mount package. This component integrates integrated base resistors for simplified circuit design and reduced component count in switching and logic applications.

The RN4902,LF carries an obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	10	kOhms
DC Current Gain (hFE) Min @ Ic, Vce	50 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300 @ 250µA, 5mA	mV
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	200	MHz
Power - Max	200	mW
Mounting Type	Surface Mount	—
Package / Case	6-TSSOP, SC-88, SOT-363	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution eligibility for the RN4902,LF is determined by the following critical parameters:

Mandatory Matching Criteria:

Transistor configuration: 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum collector current: 100 mA
Collector-emitter breakdown voltage: 50 V
Base resistor value: 10 kOhms
Emitter-base resistor value: 10 kOhms
Surface mount package compatibility: 6-TSSOP, SC-88, SOT-363

Allowable Parameter Variations:

DC current gain (hFE): May vary from specified minimum
Vce saturation: May vary within acceptable switching performance range
Transition frequency: May exceed 200 MHz specification
Power dissipation: May exceed 200 mW rating
Collector cutoff current: May vary

Substitute parts are grouped into three categories based on product status and availability: direct substitutes (same part number variants), compatible substitutes (equivalent electrical specifications), and similar alternatives (different transistor configurations or package variants).

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) mA	Vce Breakdown (Max) V	R1 kOhms	R2 kOhms	hFE Min @ Ic, Vce	Vce Sat (Max) @ Ib, Ic mV	Frequency MHz	Power (Max) mW	Package	Product Status
RN4902,LF	Toshiba	1 NPN, 1 PNP	100	50	10	10	50 @ 10mA, 5V	300 @ 250µA, 5mA	200	200	6-TSSOP	Obsolete
RN4902,LF(CT	Toshiba	1 NPN, 1 PNP	100	50	10	10	50 @ 10mA, 5V	300 @ 250µA, 5mA	200	200	6-TSSOP	Active
UMD3NTR	Rohm	1 NPN, 1 PNP	100	50	10	10	30 @ 5mA, 5V	300 @ 500µA, 10mA	250	150	6-TSSOP	Active
BCR10PNH6327XTSA1	Infineon	1 NPN, 1 PNP	100	50	10	10	30 @ 5mA, 5V	300 @ 500µA, 10mA	130	250	6-VSSOP	Last Time Buy
DCX114EU-13R-F	Diodes Inc.	1 NPN, 1 PNP	100	50	10	10	100 @ 1mA, 5V	300 @ 500µA, 10mA	250	200	6-TSSOP	Active
DDC114EU-7-F	Diodes Inc.	2 NPN	100	50	10	10	30 @ 5mA, 5V	300 @ 500µA, 10mA	250	200	6-TSSOP	Active
PUMD3,115	Nexperia	1 NPN, 1 PNP	100	50	10	10	30 @ 5mA, 5V	150 @ 500µA, 10mA	—	300	6-TSSOP	Active
PUMD3,125	Nexperia	1 NPN, 1 PNP	100	50	10	10	30 @ 5mA, 5V	150 @ 500µA, 10mA	—	300	6-TSSOP	Active
PUMD3,135	Nexperia	1 NPN, 1 PNP	100	50	10	10	30 @ 5mA, 5V	150 @ 500µA, 10mA	—	300	6-TSSOP	Active
PUMD3,165	Nexperia	1 NPN, 1 PNP	100	50	10	10	30 @ 5mA, 5V	150 @ 500µA, 10mA	—	300	6-TSSOP	Active
UMD3NFHATR	Rohm	NPN + PNP	100	50	10	10	30 @ 5mA, 5V	300 @ 500µA, 10mA	250	150	6-TSSOP	Active

Engineering Selection Recommendations

Direct Substitute (Recommended Primary Choice):

RN4902,LF(CT is the direct equivalent of the obsolete RN4902,LF. This part maintains identical electrical specifications and is manufactured by the same supplier (Toshiba). The only difference is packaging format (Tape & Reel versus cut tape). Product status is Active with 3312 units in stock. RoHS3 compliance is confirmed. This part provides the highest compatibility for direct replacement without circuit redesign.

Compatible Substitutes (Active Status, Recommended Secondary Choices):

DCX114EU-13R-F (Diodes Incorporated) is electrically compatible with identical core parameters. This part is Active status with 22933 units in stock and RoHS3 compliant. The higher DC current gain (100 @ 1mA, 5V versus 50 @ 10mA, 5V) may provide improved switching characteristics in some applications.

PUMD3,115, PUMD3,125, PUMD3,135, and PUMD3,165 (Nexperia USA Inc.) are all Active status parts with identical transistor configuration and base/emitter resistor values. These parts feature improved Vce saturation performance (150 mV versus 300 mV) and higher power dissipation capability (300 mW versus 200 mW). Nexperia parts show high inventory availability (9243 to 230197 units). All are RoHS3 compliant.

UMD3NTR (Rohm Semiconductor) is Active status with 56200 units in stock. This part offers higher transition frequency (250 MHz versus 200 MHz) and is RoHS3 compliant. Inventory availability is excellent.

Alternative Consideration (Last Time Buy Status):

BCR10PNH6327XTSA1 (Infineon Technologies) carries Last Time Buy status, indicating limited future availability. While electrically compatible, this part should not be selected for new designs or long-term production requirements. Existing inventory of 9100 units may support short-term needs only.

Not Recommended for Direct Substitution:

DDC114EU-7-F features a 2 NPN transistor configuration rather than 1 NPN, 1 PNP. This fundamental difference in transistor type makes it unsuitable for applications requiring complementary NPN/PNP functionality.

Frequently Asked Questions (FAQ)

Q: Can RN4902,LF(CT be used as a direct replacement for RN4902,LF?

A: Yes. RN4902,LF(CT is the active production equivalent of the obsolete RN4902,LF. Both parts share identical electrical specifications, base resistor values (10 kOhms), emitter-base resistor values (10 kOhms), maximum collector current (100 mA), and collector-emitter breakdown voltage (50 V). The only difference is packaging format (Tape & Reel versus cut tape). No circuit modifications are required.

Q: What are the key parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) transistor configuration (1 NPN, 1 PNP pre-biased dual), (2) maximum collector current (100 mA), (3) collector-emitter breakdown voltage (50 V), (4) base resistor value (10 kOhms), (5) emitter-base resistor value (10 kOhms), and (6) surface mount package type (6-TSSOP, SC-88, SOT-363). Parts meeting all these criteria are electrically interchangeable.

Q: Why do some substitute parts have different DC current gain (hFE) specifications?

A: DC current gain variation is an allowable parameter difference among pre-biased transistor families. The RN4902,LF specifies hFE minimum of 50 @ 10mA, 5V, while many substitutes specify 30 @ 5mA, 5V. These differences reflect different measurement conditions and do not prevent functional substitution. Higher hFE values (such as DCX114EU-13R-F at 100 @ 1mA, 5V) may provide improved switching performance in specific applications.

Q: Are Nexperia PUMD3 variants (115, 125, 135, 165) interchangeable with each other?

A: Yes. PUMD3,115, PUMD3,125, PUMD3,135, and PUMD3,165 share identical electrical specifications and differ only in packaging format or tape configuration. All feature the same transistor type (1 NPN, 1 PNP), resistor values (10 kOhms each), maximum ratings, and improved Vce saturation performance (150 mV versus 200 mV). Selection among these variants depends on packaging requirements and inventory availability.

Q: What is the significance of Vce saturation differences between RN4902,LF and substitute parts?

A: Vce saturation (maximum voltage across collector-emitter in saturated state) affects switching speed and power dissipation. The RN4902,LF specifies 300 mV @ 250µA, 5mA. Nexperia PUMD3 variants specify 150 mV @ 500µA, 10mA, indicating lower saturation voltage and potentially lower power loss during switching. This difference is beneficial for low-power applications but does not prevent substitution in circuits designed for the original part.

Q: Can UMD3NTR be used in place of RN4902,LF despite different transition frequency?

A: Yes. UMD3NTR operates at 250 MHz transition frequency compared to RN4902,LF at 200 MHz. Higher transition frequency is a performance enhancement that does not compromise compatibility. All other critical parameters (transistor type, resistor values, maximum ratings, package) are identical. UMD3NTR is suitable for direct substitution.

Q: Why is DDC114EU-7-F listed but not recommended?

A: DDC114EU-7-F features a 2 NPN transistor configuration rather than 1 NPN, 1 PNP. This fundamental difference means it lacks the complementary PNP transistor required by circuits designed for the RN4902,LF. While it shares the same package and many electrical parameters, the missing PNP transistor makes it unsuitable for applications requiring both NPN and PNP functionality.

Q: What is the impact of product status (Obsolete, Active, Last Time Buy) on part selection?

A: Product status indicates supply chain availability and long-term support. Obsolete parts (RN4902,LF) have ended production and limited remaining inventory. Active parts (RN4902,LF(CT, DCX114EU-13R-F, Nexperia PUMD3 variants, UMD3NTR) are in current production with reliable supply. Last Time Buy parts (BCR10PNH6327XTSA1) have announced end-of-life with limited remaining stock. For new designs and ongoing production, Active status parts are strongly preferred.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed carry RoHS3 compliance certification. The original RN4902,LF does not specify RoHS status due to its obsolete classification. Active production substitutes (RN4902,LF(CT, DCX114EU-13R-F, Nexperia PUMD3 series, UMD3NTR, UMD3NFHATR, BCR10PNH6327XTSA1) all meet RoHS3 requirements.

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