RN2904,LF Pre-Biased Dual PNP Transistor Equivalent & Substitute Parts

Part Overview

The Toshiba RN2904,LF is a pre-biased dual PNP bipolar junction transistor (BJT) in a 6-TSSOP/SC-88/SOT-363 surface mount package. This component integrates two PNP transistors with internal base bias resistors, designed for switching and amplification applications requiring 50V collector-emitter breakdown voltage and 100mA maximum collector current. The RN2904,LF is classified as obsolete, necessitating identification of functionally equivalent active alternatives for new designs and ongoing production requirements.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	47	kOhms
Resistor - Emitter Base (R2)	47	kOhms
DC Current Gain (hFE) Min @ Ic, Vce	80 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300 @ 250µA, 5mA	mV
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	200	MHz
Power - Max	200	mW
Mounting Type	Surface Mount	—
Package / Case	6-TSSOP, SC-88, SOT-363	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the RN2904,LF is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

Transistor configuration: 2 PNP - Pre-Biased (Dual)
Maximum collector current: 100mA
Collector-emitter breakdown voltage: 50V
Base resistor (R1): 47kOhms
Emitter-base resistor (R2): 47kOhms
Maximum power dissipation: 200mW or greater
Surface mount package compatibility: 6-TSSOP/SC-88/SOT-363

Acceptable Parameter Variations:

DC current gain (hFE): 68 to 80 minimum at specified test conditions
Vce saturation: 250mV to 300mV maximum
Transition frequency: 200MHz or greater
Collector cutoff current: 500nA maximum

Substitute parts are classified into two categories: Direct Substitutes (identical electrical and mechanical specifications) and Similar Substitutes (functionally compatible with minor parameter deviations or package variants).

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(BR) V	R1 kOhms	R2 kOhms	hFE Min @ Test	Vce Sat (Max) mV	Fт MHz	P (Max) mW	Package	Status
RN2904,LF	Toshiba	100	50	47	47	80 @ 10mA, 5V	300	200	200	SOT-363	Obsolete
RN2904,LF(CT	Toshiba	100	50	47	47	80 @ 10mA, 5V	300	200	200	SOT-363	Active
DDA144EU-7	Diodes Inc.	100	50	47	47	68 @ 5mA, 5V	300	250	200	SOT-363	Discontinued
DDA144EU-7-F	Diodes Inc.	100	50	47	47	68 @ 5mA, 5V	300	250	200	SOT-363	Active
UMB2NTN	Rohm	100	50	47	47	68 @ 5mA, 5V	300	250	150	SOT-363	Active
DDA144EUQ-7-F	Diodes Inc.	100	50	47	47	68 @ 5mA, 5V	300	250	200	SOT-363	Active
NSVMUN5113DW1T3G	onsemi	100	50	47	47	80 @ 5mA, 1V	250	—	250	SOT-363	Active
NSVMUN5137DW1T1G	onsemi	100	50	47	22	80 @ 5mA, 10V	250	—	250	SOT-363	Active

Engineering Selection Recommendations

Direct Substitutes (Recommended for Replacement):

The RN2904,LF(CT from Toshiba is the direct equivalent in active production status. This part maintains identical electrical specifications and packaging, differing only in tape & reel packaging format. Selection of RN2904,LF(CT is appropriate for designs requiring exact parameter matching and Toshiba component continuity.

Primary Active Alternatives:

DDA144EU-7-F (Diodes Incorporated) and DDA144EUQ-7-F (Diodes Incorporated automotive-qualified variant) are functionally equivalent substitutes with active product status. Both parts meet all mandatory electrical parameters with transition frequency increased to 250MHz. DDA144EUQ-7-F includes AEC-Q101 automotive qualification and is suitable for automotive applications. Both parts carry RoHS3 compliance.

UMB2NTN (Rohm Semiconductor) is an active substitute meeting all electrical requirements with RoHS3 compliance. Maximum power dissipation is rated at 150mW, which is lower than the RN2904,LF specification of 200mW. Selection of UMB2NTN requires verification that circuit power dissipation does not exceed 150mW per transistor pair.

Secondary Active Alternatives:

NSVMUN5113DW1T3G (onsemi) and NSVMUN5137DW1T1G (onsemi) are active alternatives with enhanced electrical performance. NSVMUN5113DW1T3G maintains identical base and emitter-base resistor values (47kOhms each) with improved saturation voltage (250mV maximum). NSVMUN5137DW1T1G differs in emitter-base resistor value (22kOhms versus 47kOhms), affecting bias characteristics and requiring circuit evaluation before implementation.

Compliance Considerations:

RN2904,LF(CT, DDA144EU-7-F, DDA144EUQ-7-F, UMB2NTN, NSVMUN5113DW1T3G, and NSVMUN5137DW1T1G all carry RoHS3 compliance certification. DDA144EU-7 is RoHS non-compliant and is not recommended for new designs. All recommended substitutes maintain MSL 1 (Unlimited) moisture sensitivity classification.

Frequently Asked Questions (FAQ)

Q: Can RN2904,LF(CT directly replace RN2904,LF in existing designs?

A: Yes. RN2904,LF(CT is the direct equivalent with identical electrical and mechanical specifications. The only difference is packaging format (tape & reel versus cut tape). No circuit modifications are required.

Q: What is the primary difference between DDA144EU-7 and DDA144EU-7-F?

A: DDA144EU-7 is discontinued at DiGi Electronics and carries RoHS non-compliant status. DDA144EU-7-F is the active production variant with RoHS3 compliance and tape & reel packaging. DDA144EU-7-F is the recommended selection for new designs.

Q: Is DDA144EUQ-7-F suitable for automotive applications?

A: Yes. DDA144EUQ-7-F carries AEC-Q101 automotive qualification and is designated for automotive-grade applications. This part is appropriate for automotive circuit designs requiring pre-biased dual PNP transistors.

Q: Why does UMB2NTN have lower maximum power dissipation (150mW) than RN2904,LF (200mW)?

A: UMB2NTN is rated at 150mW maximum power dissipation per transistor pair. Circuit designs using UMB2NTN must ensure that power dissipation in each transistor pair does not exceed 150mW. Designs operating within 150mW are fully compatible; designs requiring 150mW to 200mW dissipation require alternative selections.

Q: What is the significance of the R2 resistor difference in NSVMUN5137DW1T1G?

A: NSVMUN5137DW1T1G has an emitter-base resistor (R2) of 22kOhms compared to 47kOhms in RN2904,LF. This affects the internal bias network and transistor switching characteristics. Circuit evaluation is required to confirm compatibility before implementation in existing designs.

Q: Are all recommended substitutes available in SOT-363 package?

A: Yes. All recommended substitutes are available in 6-TSSOP/SC-88/SOT-363 surface mount package format, ensuring mechanical and footprint compatibility with RN2904,LF designs.

Q: Which substitute offers the best performance improvement over RN2904,LF?

A: NSVMUN5113DW1T3G and NSVMUN5137DW1T1G offer improved saturation voltage (250mV maximum versus 300mV) and higher power dissipation capability (250mW versus 200mW). These parts provide enhanced switching performance and thermal margin for demanding applications.

Q: Is RoHS compliance required for substitute selection?

A: RoHS3 compliance is standard across all active recommended substitutes. If RoHS compliance is a design requirement, all recommended parts satisfy this criterion. DDA144EU-7 is RoHS non-compliant and should not be selected for RoHS-regulated applications.

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