RN2903,LF Equivalent & Substitute Parts

Part Overview

The Toshiba Semiconductor RN2903,LF is a pre-biased dual PNP bipolar junction transistor (BJT) in a 6-TSSOP/SC-88/SOT-363 surface mount package. This component integrates two PNP transistors with internal base bias resistors, designed for switching and amplification applications requiring 50V collector-emitter breakdown voltage and 100mA maximum collector current. The RN2903,LF is classified as obsolete, necessitating identification of functionally equivalent active alternatives for new designs and ongoing production requirements.

Substiute Parts

RN2903,LF
Toshiba Semiconductor and StorageIn Stock: 6388RN2903,LF Datasheet
RN2903,LF
Current Part
RN2903,LF(CT
Toshiba Semiconductor and StorageIn Stock: 1015RN2903,LF(CT Datasheet
RN2903,LF(CT
Direct
DDA124EUQ-13-F
Diodes IncorporatedIn Stock: 10147DDA124EUQ-13-F Datasheet
DDA124EUQ-13-F
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DDA124EUQ-7-F
Diodes IncorporatedIn Stock: 1161DDA124EUQ-7-F Datasheet
DDA124EUQ-7-F
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PUMB1,115
Nexperia USA Inc.In Stock: 6927PUMB1,115 Datasheet
PUMB1,115
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PUMB1,135
Nexperia USA Inc.In Stock: 10568PUMB1,135 Datasheet
PUMB1,135
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SMUN5112DW1T1G
onsemiIn Stock: 4133SMUN5112DW1T1G Datasheet
SMUN5112DW1T1G
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Key Parameters

Parameter Value Unit
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300 mV
Current - Collector Cutoff (Max) 500 nA
Frequency - Transition 200 MHz
Power - Max 200 mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the RN2903,LF is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

  • Transistor configuration: 2 PNP - Pre-Biased (Dual)
  • Maximum collector current: 100mA
  • Collector-emitter breakdown voltage: 50V
  • Internal base resistor value: 22kOhms
  • Internal emitter-base resistor value: 22kOhms
  • Package compatibility: 6-TSSOP, SC-88, or SOT-363 surface mount

Acceptable Parameter Variations:

  • DC current gain (hFE): Minimum values between 56 and 70 at specified test conditions are acceptable
  • Vce saturation: Values between 150mV and 300mV are acceptable
  • Frequency transition: Values of 200MHz or greater are acceptable
  • Power dissipation: Values of 200mW or greater are acceptable
  • Collector cutoff current: Values between 500nA and 1µA are acceptable

Substitute parts must maintain electrical compatibility within these defined ranges to ensure functional interchangeability in circuit applications.

Parameter Comparison

Parameter RN2903,LF RN2903,LF(CT DDA124EUQ-13-F DDA124EUQ-7-F PUMB1,115 PUMB1,135 SMUN5112DW1T1G
Manufacturer Toshiba Toshiba Diodes Inc. Diodes Inc. Nexperia Nexperia onsemi
Transistor Type 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual)
Ic (Max) 100mA 100mA 100mA 100mA 100mA 100mA 100mA
Vce Breakdown (Max) 50V 50V 50V 50V 50V 50V 50V
R1 (Base) 22kOhms 22kOhms 22kOhms 22kOhms 22kOhms 22kOhms 22kOhms
R2 (Emitter-Base) 22kOhms 22kOhms 22kOhms 22kOhms 22kOhms 22kOhms 22kOhms
hFE (Min) @ Ic, Vce 70 @ 10mA, 5V 70 @ 10mA, 5V 56 @ 5mA, 5V 56 @ 5mA, 5V 60 @ 5mA, 5V 60 @ 5mA, 5V 60 @ 5mA, 10V
Vce Saturation (Max) 300mV @ 250µA, 5mA 300mV @ 250µA, 5mA 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 250mV @ 300µA, 10mA
Icbo (Max) 500nA 500nA 500nA 500nA 1µA 1µA 500nA
Frequency - Transition 200MHz 200MHz 250MHz 250MHz
Power - Max 200mW 200mW 200mW 200mW 300mW 300mW 250mW
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Product Status Obsolete Active Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Automotive Grade Yes (AEC-Q101) Yes (AEC-Q101) Yes (AEC-Q100) Yes (AEC-Q100)

Engineering Selection Recommendations

Direct Replacement (Identical Electrical and Mechanical Specifications):

RN2903,LF(CT is the direct equivalent of the obsolete RN2903,LF. Both parts are manufactured by Toshiba Semiconductor and Storage with identical electrical parameters, internal resistor values, and package configuration. The primary distinction is product status: RN2903,LF(CT is active with 955 units in stock, while RN2903,LF is obsolete. RN2903,LF(CT is supplied in Tape & Reel packaging and is ROHS3 compliant, making it the preferred choice for new designs and production continuity.

Cross-Manufacturer Substitutes (Functionally Equivalent):

The following parts meet all mandatory electrical and mechanical criteria and are suitable for applications where manufacturer flexibility is acceptable:

Diodes Incorporated DDA124EUQ-13-F and DDA124EUQ-7-F: Both variants maintain the required 2 PNP pre-biased dual configuration, 100mA collector current, 50V breakdown voltage, and 22kOhms internal resistors. These parts feature higher transition frequency (250MHz versus 200MHz) and are automotive-qualified to AEC-Q101. The DDA124EUQ-13-F has 10,100 units in stock; DDA124EUQ-7-F has 1,123 units available.

Nexperia PUMB1,115 and PUMB1,135: Both Nexperia variants provide equivalent electrical performance with enhanced power dissipation capability (300mW versus 200mW) and improved saturation characteristics (150mV versus 300mV). Both are automotive-qualified to AEC-Q100 with unlimited moisture sensitivity rating. PUMB1,115 has 6,876 units in stock; PUMB1,135 has 10,515 units available.

onsemi SMUN5112DW1T1G: This part maintains all mandatory electrical parameters with 250mW power rating and is ROHS3 compliant. Transition frequency specification is not provided. 4,100 units are in stock.

Selection Criteria by Application Context:

For applications requiring automotive qualification, select DDA124EUQ-13-F or DDA124EUQ-7-F (AEC-Q101) or PUMB1,115 or PUMB1,135 (AEC-Q100).

For applications requiring maximum power dissipation margin, select PUMB1,115 or PUMB1,135 (300mW rating).

For applications requiring minimum saturation voltage, select PUMB1,115 or PUMB1,135 (150mV maximum).

For applications with no specific automotive or enhanced performance requirements, RN2903,LF(CT provides direct Toshiba continuity.

Frequently Asked Questions (FAQ)

Q: Can I use RN2903,LF(CT as a direct replacement for RN2903,LF?

A: Yes. RN2903,LF(CT is electrically and mechanically identical to RN2903,LF. The primary difference is product status: RN2903,LF(CT is active and available in production quantities, while RN2903,LF is obsolete. Both share identical electrical specifications, internal resistor values, and package configuration.

Q: What are the key parameters that determine substitutability?

A: Substitutability is determined by: transistor configuration (2 PNP pre-biased dual), maximum collector current (100mA), collector-emitter breakdown voltage (50V), internal base resistor value (22kOhms), internal emitter-base resistor value (22kOhms), and package type (6-TSSOP/SC-88/SOT-363 surface mount). All substitute parts listed meet these mandatory criteria.

Q: Are the Diodes Incorporated DDA124 variants compatible with my RN2903,LF design?

A: Yes. DDA124EUQ-13-F and DDA124EUQ-7-F meet all mandatory electrical and mechanical substitution criteria. Both maintain 100mA collector current, 50V breakdown voltage, and 22kOhms internal resistors. The primary differences are higher transition frequency (250MHz versus 200mW) and automotive AEC-Q101 qualification, which provide enhanced performance margins.

Q: What is the difference between PUMB1,115 and PUMB1,135?

A: PUMB1,115 and PUMB1,135 are electrically identical Nexperia pre-biased dual PNP transistors. Both provide 100mA collector current, 50V breakdown voltage, 22kOhms internal resistors, 300mW power rating, and AEC-Q100 automotive qualification. The designation difference reflects packaging or tape reel configuration variants. Both are functionally interchangeable for circuit applications.

Q: Do all substitute parts have the same package footprint?

A: Yes. All listed substitute parts use 6-TSSOP, SC-88, or SOT-363 surface mount packages, which share identical PCB footprints and land patterns. No layout modifications are required when substituting between these parts.

Q: Which substitute part offers the best performance margin?

A: PUMB1,115 and PUMB1,135 offer the highest power dissipation rating (300mW versus 200mW) and the lowest saturation voltage (150mV versus 300mV), providing the greatest performance margin. These parts are recommended for applications requiring enhanced thermal or switching performance.

Q: Are all substitute parts RoHS compliant?

A: Yes. All active substitute parts listed (RN2903,LF(CT, DDA124EUQ-13-F, DDA124EUQ-7-F, PUMB1,115, PUMB1,135, and SMUN5112DW1T1G) are ROHS3 compliant. The original RN2903,LF compliance status is not specified.

Q: Which substitute parts are automotive qualified?

A: DDA124EUQ-13-F and DDA124EUQ-7-F are qualified to AEC-Q101. PUMB1,115 and PUMB1,135 are qualified to AEC-Q100. RN2903,LF(CT and SMUN5112DW1T1G do not have automotive qualification specified. Select automotive-qualified variants for applications requiring automotive-grade components.

Q: Can I mix different substitute parts in the same design?

A: Yes. All listed substitute parts are functionally equivalent and meet the same mandatory electrical and mechanical criteria. Mixing different manufacturers or part numbers within a single design is acceptable from an electrical compatibility standpoint. However, design documentation should clearly identify which part number is used in each assembly to maintain traceability and support future maintenance or rework activities.

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