RN2902,LF Equivalent & Substitute Parts

Part Overview

The Toshiba RN2902,LF is a pre-biased dual PNP bipolar junction transistor (BJT) in a 6-TSSOP/SC-88/SOT-363 surface mount package. This component integrates two PNP transistors with internal base resistors, designed for switching and amplification applications requiring 50V collector-emitter breakdown voltage and 100mA maximum collector current. The RN2902,LF is classified as obsolete, necessitating identification of functionally equivalent active alternatives for new designs and ongoing production requirements.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	10	kOhms
DC Current Gain (hFE) Min @ Ic, Vce	50 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300 @ 250µA, 5mA	mV
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	200	MHz
Power - Max	200	mW
Mounting Type	Surface Mount	—
Package / Case	6-TSSOP, SC-88, SOT-363	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the RN2902,LF is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

Transistor configuration: 2 PNP - Pre-Biased (Dual)
Maximum collector current: 100mA
Collector-emitter breakdown voltage: 50V
Base resistor value (R1): 10kOhms
Emitter-base resistor value (R2): 10kOhms
Vce saturation: 300mV maximum
Collector cutoff current: 500nA maximum
Surface mount package compatibility: SOT-363/SC-88/6-TSSOP

Allowable Variations:

Transition frequency: 200MHz or higher
Power dissipation: 200mW or higher
DC current gain (hFE): Values differing from 50 @ 10mA, 5V are acceptable if measured at different operating points
Product status: Active parts are preferred over obsolete classifications
Compliance certifications: RoHS3 and REACH compliance enhance suitability

Substitute parts are grouped into two categories: direct equivalents (identical specifications) and functional equivalents (matching all critical parameters with enhanced or equivalent performance characteristics).

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	R1 kOhms	R2 kOhms	Vce Sat mV	Icbo nA	fT MHz	P(max) mW	Package	Status
RN2902,LF	Toshiba	100	50	10	10	300	500	200	200	SOT-363	Obsolete
RN2902,LF(CT	Toshiba	100	50	10	10	300	500	200	200	SOT-363	Active
DDA114EU-7-F	Diodes Inc.	100	50	10	10	300	500	250	200	SOT-363	Active
DDA114TU-7-F	Diodes Inc.	100	50	10	—	300	—	250	200	SOT-363	Active
DDA114YUQ-7-F	Diodes Inc.	100	50	10	47	300	500	250	200	SOT-363	Active
DDA124EU-7-F	Diodes Inc.	100	50	22	22	300	500	250	200	SOT-363	Active
MUN5111DW1T1G	onsemi	100	50	10	10	250	500	—	250	SOT-363	Active
NSVMUN5111DW1T3G	onsemi	100	50	10	10	250	500	—	250	SOT-363	Active
UMB11NFHATN	Rohm	100	50	10	10	300	500	250	150	UMT6	Active

Engineering Selection Recommendations

Direct Equivalent (Identical Specifications):

RN2902,LF(CT is the direct equivalent of RN2902,LF. This Toshiba part maintains identical electrical specifications across all critical parameters. The primary distinction is product status: RN2902,LF(CT is active and available in tape and reel packaging, whereas the original RN2902,LF is obsolete. This part is the preferred replacement for existing designs.

Functional Equivalents (Matching Critical Parameters):

DDA114EU-7-F and DDA114TU-7-F (Diodes Incorporated) meet all mandatory matching parameters with enhanced transition frequency (250MHz versus 200MHz). Both parts are RoHS3 compliant and REACH unaffected. DDA114EU-7-F offers superior inventory availability (65,200 units) and is recommended for high-volume applications.

MUN5111DW1T1G and NSVMUN5111DW1T3G (onsemi) provide functional equivalence with matching base and emitter-base resistor values (10kOhms each). NSVMUN5111DW1T3G includes AEC-Q101 automotive qualification and significantly higher inventory (385,300 units). Both parts feature 250mW maximum power dissipation, exceeding the RN2902,LF specification.

UMB11NFHATN (Rohm Semiconductor) matches all critical parameters with AEC-Q101 automotive qualification. This part operates in a UMT6 package rather than SOT-363, requiring PCB layout modification. Maximum power dissipation is 150mW, below the RN2902,LF specification of 200mW.

Compliance Considerations:

All recommended substitutes are RoHS3 compliant and REACH unaffected. NSVMUN5111DW1T3G and DDA114YUQ-7-F carry AEC-Q101 automotive qualification, suitable for automotive and high-reliability applications.

Frequently Asked Questions (FAQ)

Q: Can DDA124EU-7-F substitute for RN2902,LF?

A: DDA124EU-7-F does not meet the mandatory base resistor specification. The RN2902,LF requires R1 = 10kOhms and R2 = 10kOhms, while DDA124EU-7-F specifies R1 = 22kOhms and R2 = 22kOhms. Different base resistor values alter switching characteristics and bias behavior. This part is not a suitable substitute.

Q: What is the difference between RN2902,LF and RN2902,LF(CT?

A: Both parts are electrically identical. RN2902,LF is obsolete, while RN2902,LF(CT is active. RN2902,LF(CT is supplied in tape and reel packaging (TR) for automated assembly. For new designs and production, RN2902,LF(CT is the recommended choice.

Q: Are onsemi MUN5111DW1T1G and NSVMUN5111DW1T3G interchangeable?

A: Both parts are electrically equivalent with identical base and emitter-base resistor values (10kOhms each). NSVMUN5111DW1T3G includes AEC-Q101 automotive qualification and higher inventory availability. Selection depends on application requirements and supply chain considerations.

Q: Why does UMB11NFHATN use a different package (UMT6)?

A: UMB11NFHATN is manufactured by Rohm Semiconductor in the UMT6 package, which differs from the SOT-363 package used by other substitutes. While electrically equivalent, UMT6 package substitution requires PCB redesign and footprint modification. This part is suitable only when package change is acceptable.

Q: What is the significance of transition frequency differences?

A: The RN2902,LF specifies 200MHz transition frequency. Substitute parts with 250MHz transition frequency (DDA114 series, UMB11NFHATN) offer enhanced high-frequency performance. Higher transition frequency does not compromise compatibility with applications designed for 200MHz operation.

Q: Can I use DDA114YUQ-7-F in place of RN2902,LF?

A: DDA114YUQ-7-F matches the mandatory parameters (Ic, Vce(br), R1, Vce saturation, Icbo) but specifies R2 = 47kOhms instead of 10kOhms. This difference in emitter-base resistor value alters bias network behavior. Substitution is not recommended without circuit analysis confirming compatibility with the modified resistor value.

Q: What does RoHS3 compliance mean for this component?

A: RoHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. All recommended substitutes are RoHS3 compliant, ensuring compatibility with environmental regulations and industry standards.

Q: Is AEC-Q101 qualification required for my application?

A: AEC-Q101 qualification is required for automotive and high-reliability applications. NSVMUN5111DW1T3G and DDA114YUQ-7-F carry this qualification. For non-automotive applications, AEC-Q101 qualification is not mandatory but indicates enhanced reliability testing.

Q: What is the impact of power dissipation differences?

A: The RN2902,LF specifies 200mW maximum power dissipation. MUN5111DW1T1G and NSVMUN5111DW1T3G offer 250mW, providing thermal margin. UMB11NFHATN specifies 150mW, which is lower. For applications approaching the 200mW limit, higher power-rated parts provide design margin.

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