RN2902FE,LF(CT Pre-Biased Dual PNP Transistor Equivalent & Substitute Parts

Part Overview

The RN2902FE,LF(CT is a pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount component operates at 50V collector-emitter breakdown voltage with a maximum collector current of 100mA and 200mW power dissipation. The device features integrated base and emitter-base resistors (10kOhms each) for simplified circuit design in switching and amplification applications.

The RN2902FE,LF(CT maintains Active product status and is ROHS3 compliant with unlimited moisture sensitivity rating (MSL 1). Equivalent and substitute parts are identified based on matching electrical specifications, mechanical compatibility, and functional equivalence within the pre-biased dual PNP transistor category.

Substiute Parts

RN2902FE,LF(CT

Toshiba Semiconductor and StorageIn Stock: 4670RN2902FE,LF(CT Datasheet

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EMB11T2R

Rohm SemiconductorIn Stock: 20713EMB11T2R Datasheet

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NSBA114EDXV6T1G

onsemiIn Stock: 3966NSBA114EDXV6T1G Datasheet

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NSVBA114EDXV6T1G

onsemiIn Stock: 795NSVBA114EDXV6T1G Datasheet

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PEMB11,115

Nexperia USA Inc.In Stock: 9240PEMB11,115 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the RN2902FE,LF(CT is determined by the following critical parameters:

Mandatory Matching Criteria:

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) Max: 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1): 10kOhms
• Resistor - Emitter Base (R2): 10kOhms
• Mounting Type: Surface Mount
• Package / Case: SOT-563 or SOT-666

Allowable Variation Parameters:

• Power - Max: Substitute must equal or exceed 200mW
• Frequency - Transition: Substitute must equal or exceed 200MHz
• DC Current Gain (hFE): Substitute must meet minimum specifications at rated conditions
• Vce Saturation: Substitute must meet specified maximum values
• Current - Collector Cutoff: Substitute must meet specified maximum values

All identified substitute parts meet these criteria and are ROHS3 compliant with MSL 1 rating.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

EMB11T2R (Rohm Semiconductor) is functionally equivalent with matching core electrical specifications. This substitute operates at 250MHz transition frequency, exceeding the RN2902FE,LF(CT specification of 200MHz. Power dissipation is rated at 150mW, which is lower than the original 200mW specification. This device is suitable for applications where power dissipation headroom is not critical. EMB11T2R is ROHS3 compliant with MSL 1 rating and maintains Active product status.

NSBA114EDXV6T1G (onsemi) and NSVBA114EDXV6T1G (onsemi) are functionally equivalent substitutes with enhanced power handling capability at 500mW. Both devices match all mandatory electrical parameters and are available in SOT-563 package configuration. NSVBA114EDXV6T1G is supplied in Tape & Reel packaging, matching the original RN2902FE,LF(CT packaging format. Both onsemi devices are ROHS3 compliant with MSL 1 rating and Active product status. Transition frequency specification is not provided for these devices.

Secondary Substitute (Legacy Status):

PEMB11,115 (Nexperia USA Inc.) is functionally equivalent but carries Not For New Designs product status. This device features superior Vce saturation performance at 150mV maximum and operates at 180MHz transition frequency. Power dissipation is rated at 300mW. PEMB11,115 is ROHS3 compliant with MSL 1 rating. This substitute is suitable only for replacement applications in existing designs where component continuity is required.

Packaging Considerations:

The RN2902FE,LF(CT is supplied in Tape & Reel (TR) format with ES6 package designation. NSVBA114EDXV6T1G maintains identical Tape & Reel packaging. EMB11T2R is supplied in Cut Tape (CT) & Digi-Reel format. NSBA114EDXV6T1G is supplied in Cut Tape (CT) format. PEMB11,115 is supplied in Tape & Reel (TR) format with SOT-666 package designation. All devices support both SOT-563 and SOT-666 case options.

Frequently Asked Questions (FAQ)

Q: Can EMB11T2R replace RN2902FE,LF(CT in all applications?

A: EMB11T2R is functionally equivalent for applications where the 150mW power rating is sufficient. The original RN2902FE,LF(CT is rated at 200mW. If the application requires the full 200mW power dissipation capability, EMB11T2R may not be suitable. Both devices match all mandatory electrical parameters including collector current, breakdown voltage, and integrated resistor values.

Q: What is the difference between NSBA114EDXV6T1G and NSVBA114EDXV6T1G?

A: Both devices are electrically identical with matching specifications. The primary difference is packaging format. NSBA114EDXV6T1G is supplied in Cut Tape (CT) format, while NSVBA114EDXV6T1G is supplied in Tape & Reel (TR) format. NSVBA114EDXV6T1G matches the original RN2902FE,LF(CT Tape & Reel packaging. Both devices feature 500mW power rating, exceeding the original 200mW specification.

Q: Why is PEMB11,115 marked as Not For New Designs?

A: PEMB11,115 carries legacy product status from Nexperia USA Inc. This designation indicates the manufacturer is not recommending this device for new design implementations. However, PEMB11,115 remains functionally equivalent and suitable for replacement in existing designs where component continuity is required. For new designs, select from the Active status alternatives: EMB11T2R, NSBA114EDXV6T1G, or NSVBA114EDXV6T1G.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All identified substitute parts—EMB11T2R, NSBA114EDXV6T1G, NSVBA114EDXV6T1G, and PEMB11,115—are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the original RN2902FE,LF(CT specifications.

Q: What are the key parameters that determine substitution eligibility?

A: Substitution eligibility is determined by: Transistor Type (2 PNP - Pre-Biased Dual), Collector Current maximum (100mA), Collector-Emitter Breakdown Voltage (50V), integrated Base Resistor (10kOhms), integrated Emitter-Base Resistor (10kOhms), Surface Mount mounting type, and SOT-563 or SOT-666 package compatibility. Substitute devices must match all these parameters. Power dissipation and transition frequency may exceed original specifications without affecting substitution validity.

Q: Can I use a substitute with lower power rating than the original?

A: EMB11T2R is rated at 150mW compared to the original 200mW. Substitution is valid only if the application circuit does not require the full 200mW power dissipation capability. Review thermal and power budget requirements in the application schematic before selecting EMB11T2R as a substitute.

Q: What packaging options are available for substitutes?

A: All substitute parts support both SOT-563 and SOT-666 case options. Tape & Reel packaging is available for NSVBA114EDXV6T1G and PEMB11,115. Cut Tape and Digi-Reel packaging is available for EMB11T2R. Cut Tape packaging is available for NSBA114EDXV6T1G. Verify packaging format requirements before component procurement.