RN2901,LF(CT Pre-Biased Dual PNP Transistor Equivalent & Substitute Parts

Part Overview

The RN2901,LF(CT is an active pre-biased dual PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. This surface mount component integrates two PNP transistors with internal base and emitter-base resistors, designed for switching and amplification applications requiring 50V collector-emitter breakdown voltage and 100mA maximum collector current. The part is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1) and is currently in active production status. Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and functional characteristics to support component procurement flexibility and supply chain continuity.

Substiute Parts

RN2901,LF(CT
Toshiba Semiconductor and StorageIn Stock: 1166RN2901,LF(CT Datasheet
RN2901,LF(CT
Current Part
PUMB15,115
Nexperia USA Inc.In Stock: 3706PUMB15,115 Datasheet
PUMB15,115
Similar

Key Parameters

Parameter Value Unit
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300 mV
Current - Collector Cutoff (Max) 500 nA
Frequency - Transition 200 MHz
Power - Max 200 mW
Package / Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the RN2901,LF(CT are identified based on strict electrical and mechanical parameter matching within the pre-biased dual PNP transistor category. The substitution logic is based on the following critical parameters:

Electrical Matching Criteria:

  • Transistor configuration: 2 PNP - Pre-Biased (Dual)
  • Maximum collector current: 100mA
  • Collector-emitter breakdown voltage: 50V
  • Internal base resistor (R1): 4.7kOhms
  • Internal emitter-base resistor (R2): 4.7kOhms
  • DC current gain (hFE): minimum 30 @ 10mA, 5V
  • Surface mount packaging: 6-TSSOP, SC-88, SOT-363

Mechanical Compatibility:

  • Package type: 6-TSSOP (SOT-363)
  • Mounting: Surface mount
  • Lead configuration: Tape & Reel (TR)

Compliance Requirements:

  • RoHS3 compliance
  • MSL 1 (Unlimited)
  • Active product status

The PUMB15,115 from Nexperia USA Inc. meets all core electrical and mechanical requirements for direct substitution. Variations in saturation voltage, cutoff current, power dissipation rating, and transition frequency do not preclude substitution when the application circuit design accommodates the specified parameter ranges.

Parameter Comparison

Parameter RN2901,LF(CT (Toshiba) PUMB15,115 (Nexperia) Unit
Manufacturer Toshiba Semiconductor and Storage Nexperia USA Inc.
Transistor Type 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 50 V
Resistor - Base (R1) 4.7 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300 @ 250µA, 5mA 150 @ 500µA, 10mA mV
Current - Collector Cutoff (Max) 500 1 nA
Frequency - Transition 200 MHz
Power - Max 200 300 mW
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active
Grade Automotive
Qualification AEC-Q100

Engineering Selection Recommendations

Primary Substitute: PUMB15,115 (Nexperia USA Inc.)

The PUMB15,115 is a direct functional equivalent to the RN2901,LF(CT for applications requiring pre-biased dual PNP transistor functionality. Both parts share identical core electrical specifications: 100mA maximum collector current, 50V collector-emitter breakdown voltage, 4.7kOhm internal resistors, and 30 minimum DC current gain at specified conditions. Both components are packaged in 6-TSSOP (SOT-363) surface mount configuration and comply with ROHS3 standards with MSL 1 rating.

The PUMB15,115 offers enhanced performance characteristics in specific parameters: lower saturation voltage (150mV versus 300mV), reduced collector cutoff current (1nA versus 500nA), and higher maximum power dissipation (300mW versus 200mW). The Nexperia part carries automotive-grade qualification (AEC-Q100), which provides additional reliability assurance for applications requiring automotive-level component validation.

Both parts are active products with established supply availability. Selection between these parts depends on application-specific requirements for saturation voltage performance, leakage current specifications, and power dissipation headroom. The PUMB15,115 is suitable for direct replacement in existing designs using the RN2901,LF(CT without circuit modification when the enhanced electrical characteristics are compatible with the application design.

Frequently Asked Questions (FAQ)

Q: Can the PUMB15,115 be used as a direct replacement for the RN2901,LF(CT in existing circuit designs?

A: Yes. Both parts are pre-biased dual PNP transistors with identical maximum collector current (100mA), collector-emitter breakdown voltage (50V), internal base and emitter-base resistor values (4.7kOhms each), and DC current gain specifications (30 minimum @ 10mA, 5V). Both use 6-TSSOP surface mount packaging. The PUMB15,115 exhibits lower saturation voltage and reduced leakage current, which are generally favorable characteristics. Circuit designs must accommodate the specified parameter ranges of the substitute part.

Q: What are the key electrical differences between the RN2901,LF(CT and PUMB15,115?

A: The primary electrical differences are: (1) Vce saturation maximum is 150mV for PUMB15,115 versus 300mV for RN2901,LF(CT; (2) collector cutoff current maximum is 1nA for PUMB15,115 versus 500nA for RN2901,LF(CT; (3) maximum power dissipation is 300mW for PUMB15,115 versus 200mW for RN2901,LF(CT. The PUMB15,115 does not specify transition frequency. All other core electrical parameters are identical.

Q: Are both parts compliant with environmental and regulatory standards?

A: Yes. Both the RN2901,LF(CT and PUMB15,115 are ROHS3 compliant, REACH unaffected, and carry MSL 1 (unlimited) moisture sensitivity level ratings. The PUMB15,115 additionally carries automotive-grade qualification (AEC-Q100) from Nexperia.

Q: What is the package compatibility between these parts?

A: Both parts use identical 6-TSSOP (SC-88, SOT-363) surface mount packaging. Pin configuration and footprint are compatible for direct PCB substitution without layout modification.

Q: Are there any performance considerations when substituting the PUMB15,115 for the RN2901,LF(CT?

A: The PUMB15,115 provides improved saturation voltage performance (lower value) and significantly reduced leakage current, which are generally beneficial for switching applications. The higher power dissipation rating (300mW versus 200mW) provides additional thermal margin. Applications sensitive to saturation voltage or leakage current specifications must verify that the PUMB15,115 characteristics are compatible with circuit design requirements.

Q: What is the product status and supply availability for both parts?

A: Both parts are active products in current production. The RN2901,LF(CT has 1116 pieces in stock inventory, and the PUMB15,115 has 3597 pieces in stock inventory, indicating established supply availability for both components.

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