RF Diode PIN RN262GT2R Equivalent & Substitute Parts

Part Overview

The RN262GT2R is an RF Diode PIN manufactured by Rohm Semiconductor, designed for RF switching and attenuation applications. This single PIN diode operates at a peak reverse voltage of 30V with a maximum current rating of 100 mA and power dissipation of 100 mW. The device is packaged in SOD-723 (VMD2) format.

The RN262GT2R is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Substiute Parts

RN262GT2R
Rohm SemiconductorIn Stock: 787RN262GT2R Datasheet
RN262GT2R
Current Part
RN142SMT2R
Rohm SemiconductorIn Stock: 21255RN142SMT2R Datasheet
RN142SMT2R
Similar
BAP51-02,315
NXP USA Inc.In Stock: 938BAP51-02,315 Datasheet
BAP51-02,315
Similar
BAP51-02-TP
Micro Commercial CoIn Stock: 5995BAP51-02-TP Datasheet
BAP51-02-TP
Similar

Key Parameters

Parameter Value
Diode Type PIN - Single
Voltage - Peak Reverse (Max) 30V
Current - Max 100 mA
Capacitance @ Vr, F 0.4pF @ 1V, 1MHz
Resistance @ If, F 1.5Ohm @ 10mA, 100MHz
Power Dissipation (Max) 100 mW
Operating Temperature 150°C (TJ)
Package / Case SOD-723
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the RN262GT2R is determined by the following critical parameters:

  • Diode Type: PIN - Single configuration must be maintained
  • Voltage Rating: Substitute parts must support the operating voltage requirements of the application
  • Current Rating: Maximum current capability must meet or exceed application demands
  • Package Compatibility: Physical form factor and pin configuration must be compatible with the PCB layout
  • Thermal Performance: Operating temperature range and power dissipation capability must support the thermal environment
  • Compliance: RoHS3 compliance and REACH status must align with regulatory requirements

The substitute parts identified (RN142SMT2R, BAP51-02,315, and BAP51-02-TP) are PIN diodes from established manufacturers that share the same functional category and core electrical characteristics suitable for RF switching applications.

Parameter Comparison

Parameter RN262GT2R RN142SMT2R BAP51-02,315 BAP51-02-TP
Manufacturer Rohm Semiconductor Rohm Semiconductor NXP USA Inc. Micro Commercial Co
Diode Type PIN - Single PIN - Single PIN - Single PIN - Single
Voltage - Peak Reverse (Max) 30V 60V 60V 60V
Current - Max 100 mA 100 mA 50 mA 50 mA
Capacitance @ Vr, F 0.4pF @ 1V, 1MHz 0.45pF @ 1V, 1MHz 0.35pF @ 5V, 1MHz 0.35pF @ 5V, 1MHz
Resistance @ If, F 1.5Ohm @ 10mA, 100MHz 2Ohm @ 10mA, 100MHz Not specified 2.5Ohm @ 10mA, 100MHz
Power Dissipation (Max) 100 mW Not specified 715 mW 715 mW
Operating Temperature 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Package / Case SOD-723 SC-79, SOD-523 SC-79, SOD-523 SC-79, SOD-523
Product Status Obsolete Active Active Obsolete
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

RN142SMT2R (Rohm Semiconductor, Active Status): This substitute offers the same manufacturer lineage as the RN262GT2R with active product status, ensuring long-term availability. It maintains 100 mA current capability and 150°C maximum operating temperature. The higher 60V peak reverse voltage provides additional design margin. Package transition from SOD-723 to SOD-523 requires PCB layout verification. ROHS3 compliance and unlimited MSL rating support standard manufacturing processes.

BAP51-02,315 (NXP USA Inc., Active Status): This NXP device provides active product status with extended operating temperature range (-65°C to 150°C). The 60V voltage rating and 715 mW power dissipation capability exceed the original specification. Current rating is reduced to 50 mA, which may limit suitability for high-current applications. SOD-523 package requires layout modification. ROHS3 compliance and unlimited MSL rating are maintained.

BAP51-02-TP (Micro Commercial Co, Obsolete Status): While functionally similar to BAP51-02,315 with identical electrical specifications, this part carries obsolete status. Selection should prioritize active-status alternatives unless specific supply chain constraints apply. Extended temperature range and higher power dissipation are available. ROHS3 compliance is maintained.

Frequently Asked Questions (FAQ)

Q: Can RN142SMT2R directly replace RN262GT2R without PCB modification?

A: Package transition from SOD-723 to SOD-523 requires PCB layout changes. Pin configuration and footprint differ between these packages. Mechanical compatibility cannot be assumed without design review.

Q: What are the implications of the voltage rating increase from 30V to 60V in substitute parts?

A: Higher voltage ratings provide additional design margin and do not degrade performance in lower-voltage applications. The 60V-rated substitutes are suitable for designs operating at or below 30V.

Q: Why is current rating reduced to 50 mA in BAP51-02,315 and BAP51-02-TP?

A: These NXP and Micro Commercial Co devices are specified for 50 mA maximum current. Applications requiring 100 mA operation must verify that actual current demands do not exceed this limit, or select RN142SMT2R which maintains 100 mA capability.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. RN262GT2R, RN142SMT2R, BAP51-02,315, and BAP51-02-TP are all ROHS3 compliant with unlimited MSL ratings.

Q: Which substitute offers the best long-term availability?

A: RN142SMT2R and BAP51-02,315 both carry active product status, indicating ongoing manufacturer support and supply availability. BAP51-02-TP is obsolete and should not be selected for new designs.

Q: How do capacitance and resistance specifications compare across substitutes?

A: Capacitance values range from 0.35pF to 0.45pF across all parts, with measurement conditions varying by manufacturer. Resistance specifications are provided for RN262GT2R, RN142SMT2R, and BAP51-02-TP; BAP51-02,315 does not specify forward resistance. These minor variations are typical for PIN diode families and do not prevent functional substitution in RF switching applications.

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