RN2402S,LF(D Pre-Biased PNP Transistor Equivalent & Substitute Parts

Part Overview

The RN2402S,LF(D is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage in a surface mount S-Mini package. This component is classified as obsolete, which necessitates identification of active equivalent and substitute parts for ongoing design requirements and production continuity. The device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and is designed for general-purpose switching and amplification applications in surface mount implementations.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Pre-Biased	—
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	10	kOhms
DC Current Gain (hFE) Min @ Ic, Vce	50 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300	mV
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	200	MHz
Power - Max	200	mW
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the RN2402S,LF(D is determined by strict equivalence of the following critical parameters:

Primary Substitution Criteria:

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) Max: 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Package / Case: TO-236-3, SC-59, SOT-23-3 (surface mount compatibility)
Mounting Type: Surface Mount

Secondary Consideration:

Product Status: Active (preferred for ongoing availability)

The RN2402,LF (Toshiba, active status) is a direct equivalent with identical electrical specifications and packaging. Additional substitutes from Diodes Incorporated, Micro Commercial Co, Rohm Semiconductor, and onsemi are listed with variations in internal bias resistor values (R1/R2), transition frequency, and DC current gain characteristics. These variations require circuit-level evaluation based on application requirements.

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic Max (mA)	Vce Breakdown (V)	R1 (kOhms)	R2 (kOhms)	hFE Min @ Ic, Vce	Vce Sat Max (mV)	Freq Trans (MHz)	Power Max (mW)	Package
RN2402S,LF(D	Toshiba	Obsolete	100	50	10	10	50 @ 10mA, 5V	300	200	200	SOT-23-3
RN2402,LF	Toshiba	Active	100	50	10	10	50 @ 10mA, 5V	300	200	200	SOT-23-3
DDTA114ECA-7-F	Diodes Inc	Active	100	50	10	10	30 @ 5mA, 5V	300	250	200	SOT-23-3
DDTA115ECA-7-F	Diodes Inc	Active	100	50	100	100	82 @ 5mA, 5V	300	250	200	SOT-23-3
DDTA123ECA-7-F	Diodes Inc	Active	100	50	2.2	2.2	20 @ 20mA, 5V	300	250	200	SOT-23-3
DDTA124ECA-7-F	Diodes Inc	Active	100	50	22	22	56 @ 5mA, 5V	300	250	200	SOT-23-3
DDTA144ECA-7-F	Diodes Inc	Active	100	50	47	47	68 @ 5mA, 5V	300	250	200	SOT-23-3
DTA114ECA-TP	Micro Commercial Co	Active	100	50	10	10	30 @ 5mA, 5V	300	250	200	SOT-23-3
DTA114ECAT116	Rohm Semiconductor	Active	50	50	10	10	30 @ 5mA, 5V	300	250	200	SST3
MMUN2111LT1G	onsemi	Active	100	50	10	10	35 @ 5mA, 10V	250	—	246	SOT-23-3
MMUN2111LT3G	onsemi	Active	100	50	10	10	35 @ 5mA, 10V	250	—	246	SOT-23-3

Engineering Selection Recommendations

Direct Equivalent (Recommended for Drop-In Replacement):

RN2402,LF (Toshiba Semiconductor and Storage) is the direct active equivalent of the obsolete RN2402S,LF(D. This part maintains identical electrical specifications, internal bias resistor values (R1 = R2 = 10 kOhms), and package configuration. The RN2402,LF is ROHS3 compliant and carries active product status with substantial inventory availability (3426 pcs), ensuring supply chain continuity.

Alternative Substitutes with Matching Bias Resistor Configuration:

DTA114ECA-TP (Micro Commercial Co) and DDTA114ECA-7-F (Diodes Incorporated) both feature identical R1 and R2 values (10 kOhms) and 100 mA collector current rating. Both are ROHS3 compliant and active. These parts exhibit higher transition frequency (250 MHz vs. 200 MHz) and lower DC current gain specifications, which may require circuit validation in gain-sensitive applications.

MMUN2111LT1G and MMUN2111LT3G (onsemi) maintain the 10 kOhms bias resistor configuration and 100 mA rating. Both are ROHS3 compliant and active. These parts feature lower saturation voltage (250 mV vs. 300 mV) and higher power dissipation rating (246 mW vs. 200 mW).

Alternative Substitutes with Different Bias Resistor Values:

DDTA115ECA-7-F, DDTA123ECA-7-F, DDTA124ECA-7-F, and DDTA144ECA-7-F (Diodes Incorporated) feature bias resistor values of 100 kOhms, 2.2 kOhms, 22 kOhms, and 47 kOhms respectively. These parts maintain 100 mA collector current and 50 V breakdown voltage but alter the internal bias network, resulting in different DC current gain characteristics. Selection of these variants requires application-specific circuit analysis.

Limited Current Rating Substitute:

DTA114ECAT116 (Rohm Semiconductor) is rated for 50 mA maximum collector current, which is half the RN2402S,LF(D specification. This part is suitable only for applications with reduced current requirements.

Frequently Asked Questions (FAQ)

Q: Can RN2402,LF directly replace RN2402S,LF(D without circuit modification?

A: Yes. RN2402,LF is the direct active equivalent with identical electrical specifications and package configuration. No circuit modification is required.

Q: What is the difference between RN2402S,LF(D and RN2402,LF?

A: The primary difference is product status. RN2402S,LF(D is obsolete, while RN2402,LF is active. Both share identical electrical parameters, internal bias resistor values, and packaging.

Q: Why do substitute parts have different bias resistor values?

A: Pre-biased transistors integrate internal bias resistors to establish a defined base current without external components. Different R1 and R2 values alter the bias point and DC current gain characteristics. Selection depends on application requirements.

Q: Can DDTA114ECA-7-F replace RN2402S,LF(D in all applications?

A: DDTA114ECA-7-F maintains the same bias resistor configuration (10 kOhms) and current rating (100 mA). However, it exhibits different DC current gain (30 vs. 50 @ specified conditions) and higher transition frequency (250 MHz vs. 200 MHz). Circuit-level validation is required for gain-dependent applications.

Q: What is the significance of transition frequency differences?

A: Transition frequency (fT) indicates the frequency at which current gain drops to unity. Higher fT values (250 MHz vs. 200 MHz) indicate faster switching capability. For low-frequency applications, this difference is typically not critical.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 compliance certification, meeting environmental and hazardous substance restrictions.

Q: Can DTA114ECAT116 be used as a substitute?

A: DTA114ECAT116 is suitable only for applications where collector current does not exceed 50 mA. The RN2402S,LF(D is rated for 100 mA, so this part is not a full equivalent.

Q: What packaging considerations apply to these substitutes?

A: All substitutes use surface mount packages compatible with SOT-23-3 or equivalent footprints (TO-236-3, SC-59). DTA114ECAT116 uses SST3 packaging, which may require footprint verification. Standard SOT-23-3 packages are mechanically and electrically interchangeable.

Q: Which substitute offers the best saturation voltage performance?

A: MMUN2111LT1G and MMUN2111LT3G offer lower saturation voltage (250 mV vs. 300 mV), which reduces power dissipation in saturated switching applications.

Q: Is inventory availability a consideration for part selection?

A: Yes. MMUN2111LT1G (onsemi) has the highest inventory (551,200 pcs), followed by DDTA114ECA-7-F (158,200 pcs). RN2402,LF (3,426 pcs) provides adequate supply for the direct equivalent.

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