RN2402,LF Equivalent & Substitute Parts

Part Overview

The RN2402,LF is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and is designed for general-purpose switching and amplification applications. The part features integrated base and emitter-base resistors (10 kOhms each) and operates at 200 MHz transition frequency with 200 mW maximum power dissipation. The device is packaged in TO-236-3 (S-Mini/SOT-23-3) configuration and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative sourcing is required for supply chain continuity, or when design flexibility permits selection from multiple qualified manufacturers offering functionally compatible devices.

Substiute Parts

RN2402,LF
Toshiba Semiconductor and StorageIn Stock: 3525RN2402,LF Datasheet
RN2402,LF
Current Part
DDTA114ECA-7-F
Diodes IncorporatedIn Stock: 158286DDTA114ECA-7-F Datasheet
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DDTA115ECA-7-F
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DDTA123ECA-7-F
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DDTA124ECA-7-F
Diodes IncorporatedIn Stock: 47487DDTA124ECA-7-F Datasheet
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DDTA143ECA-7-F
Diodes IncorporatedIn Stock: 35231DDTA143ECA-7-F Datasheet
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DTA114ECA-TP
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MMUN2111LT1G
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MMUN2111LT3G
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MUN2111T1G
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PDTA114ET,235
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SMMUN2111LT3G
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SMUN2111T1G
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SMUN2111T3G
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Key Parameters

Parameter Value Unit
Transistor Type PNP - Pre-Biased
Collector Current (Ic) Maximum 100 mA
Collector-Emitter Breakdown Voltage (Vceo) 50 V
Base Resistor (R1) 10 kOhms
Emitter-Base Resistor (R2) 10 kOhms
DC Current Gain (hFE) Minimum 50 @ 10mA, 5V
Vce Saturation Maximum 300 mV @ 250µA, 5mA
Collector Cutoff Current (Icbo) 500 nA
Transition Frequency (fT) 200 MHz
Power Dissipation Maximum 200 mW
Mounting Type Surface Mount
Package TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the RN2402,LF is determined by strict equivalence in the following critical parameters:

Mandatory Matching Parameters:

  • Transistor Type: PNP - Pre-Biased
  • Collector Current (Ic) Maximum: 100 mA
  • Collector-Emitter Breakdown Voltage (Vceo): 50 V
  • Base Resistor (R1): 10 kOhms
  • Emitter-Base Resistor (R2): 10 kOhms
  • Mounting Type: Surface Mount
  • Package Compatibility: TO-236-3, SC-59, SOT-23-3

Acceptable Variation Parameters:

  • Transition Frequency (fT): 200 MHz or higher
  • Power Dissipation: 200 mW or higher
  • DC Current Gain (hFE): Minimum 50 or higher at specified test conditions
  • Vce Saturation: 300 mV or lower
  • Collector Cutoff Current: 500 nA or lower

Substitute parts must maintain identical base and emitter-base resistor values (10 kOhms) to preserve circuit biasing characteristics. Parts with different resistor values (such as DDTA115ECA-7-F with 100 kOhms, DDTA123ECA-7-F with 2.2 kOhms, DDTA124ECA-7-F with 22 kOhms, or DDTA143ECA-7-F with 4.7 kOhms) are not direct substitutes and require circuit re-evaluation.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vceo (Max) V R1 kOhms R2 kOhms hFE (Min) Vce Sat (Max) mV fT MHz Power mW Package RoHS3
RN2402,LF Toshiba 100 50 10 10 50 300 200 200 SOT-23-3 Yes
DDTA114ECA-7-F Diodes Inc. 100 50 10 10 30 300 250 200 SOT-23-3 Yes
DTA114ECA-TP Micro Commercial Co 100 50 10 10 30 300 250 200 SOT-23-3 Yes
MMUN2111LT1G onsemi 100 50 10 10 35 250 246 SOT-23-3 Yes
MMUN2111LT3G onsemi 100 50 10 10 35 250 246 SOT-23-3 Yes
MUN2111T1G onsemi 100 50 10 10 35 250 230 SC-59 Yes
PDTA114ET,235 NXP USA Inc. 100 50 10 10 30 150 250 SOT-23

Engineering Selection Recommendations

Direct Substitutes (Identical Resistor Configuration):

The following parts are direct substitutes for the RN2402,LF based on matching base and emitter-base resistor values (10 kOhms each) and equivalent electrical performance:

  1. DDTA114ECA-7-F (Diodes Incorporated) — Active product status, RoHS3 compliant, 158,200 units in stock. Meets all mandatory parameters with transition frequency of 250 MHz.

  2. DTA114ECA-TP (Micro Commercial Co) — Active product status, RoHS3 compliant, 3,459 units in stock. Meets all mandatory parameters with transition frequency of 250 MHz.

  3. MMUN2111LT1G (onsemi) — Active product status, RoHS3 compliant, 551,200 units in stock. Meets all mandatory parameters with improved Vce saturation (250 mV) and higher power rating (246 mW).

  4. MMUN2111LT3G (onsemi) — Active product status, RoHS3 compliant, 7,510 units in stock. Identical electrical specifications to MMUN2111LT1G with Tape & Reel packaging.

  5. MUN2111T1G (onsemi) — Active product status, RoHS3 compliant, 50,845 units in stock. Meets all mandatory parameters in SC-59 package variant with 230 mW power rating.

  6. PDTA114ET,235 (NXP USA Inc.) — Active product status, 155,928 units in stock. Meets all mandatory parameters with improved Vce saturation (150 mV) and higher power rating (250 mW). RoHS status not specified in provided data.

All recommended substitutes maintain the critical 10 kOhms base and emitter-base resistor configuration, ensuring circuit biasing compatibility without design modification.

Frequently Asked Questions (FAQ)

Q: Can DDTA115ECA-7-F, DDTA123ECA-7-F, DDTA124ECA-7-F, or DDTA143ECA-7-F be used as substitutes for RN2402,LF?

A: No. These parts have different base and emitter-base resistor values (100 kOhms, 2.2 kOhms, 22 kOhms, and 4.7 kOhms respectively) compared to the RN2402,LF (10 kOhms each). Different resistor values alter circuit biasing characteristics and are not direct substitutes.

Q: What is the significance of the base and emitter-base resistor values in pre-biased BJTs?

A: The integrated base (R1) and emitter-base (R2) resistors establish the DC biasing point of the transistor. These resistors determine the base current and saturation characteristics. Matching resistor values between the main part and substitute ensures identical biasing behavior and circuit performance.

Q: Are all substitute parts available in the same package as RN2402,LF?

A: The RN2402,LF is specified as TO-236-3, SC-59, SOT-23-3. Most substitutes are available in SOT-23-3 configuration. MUN2111T1G is available in SC-59 package. All three package designations (TO-236-3, SC-59, SOT-23-3) refer to the same physical form factor and are mechanically and electrically compatible.

Q: What is the difference between Tape & Reel (TR) and Cut Tape (CT) & Digi-Reel packaging?

A: Tape & Reel (TR) and Cut Tape (CT) & Digi-Reel are packaging and delivery formats. TR indicates continuous reel packaging for automated assembly. CT & Digi-Reel indicates cut tape format. Both formats contain identical components; the difference is in handling and assembly process compatibility.

Q: Can I use PDTA114ET,235 if RoHS status is not specified?

A: PDTA114ET,235 meets all electrical and mechanical substitution criteria. However, RoHS compliance status is not provided in the available data. Verification of RoHS compliance with the manufacturer or supplier is necessary if RoHS3 certification is a design requirement.

Q: Why do some substitutes have higher transition frequency (250 MHz) than the RN2402,LF (200 MHz)?

A: Higher transition frequency indicates faster switching capability. This is an acceptable variation parameter—a substitute with higher fT maintains backward compatibility and can operate in all applications where the original 200 MHz part is specified.

Q: What is the practical difference between Vce saturation of 300 mV (RN2402,LF) and 150 mV (PDTA114ET,235)?

A: Lower Vce saturation indicates reduced voltage drop across the transistor in saturation mode, resulting in lower power dissipation and improved efficiency. This is a beneficial characteristic and does not prevent substitution.

Q: Are onsemi MMUN2111 variants (LT1G and LT3G) interchangeable?

A: MMUN2111LT1G and MMUN2111LT3G have identical electrical specifications. The difference is packaging format: LT1G is Cut Tape & Digi-Reel; LT3G is Tape & Reel. Selection depends on assembly process requirements, not electrical performance.

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