RN2401,LF Equivalent & Substitute Parts

Part Overview

The RN2401,LF is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and is designed for general-purpose switching and amplification applications. The part is currently in active production status with RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design flexibility within the same functional category.

Substiute Parts

RN2401,LF

Toshiba Semiconductor and StorageIn Stock: 61361RN2401,LF Datasheet

Current PartRFQ

DTA143ECAT116

Rohm SemiconductorIn Stock: 2293DTA143ECAT116 Datasheet

SimilarRFQ

DTA143EKAT146

Rohm SemiconductorIn Stock: 227327DTA143EKAT146 Datasheet

SimilarRFQ

MMUN2132LT1G

onsemiIn Stock: 50290MMUN2132LT1G Datasheet

SimilarRFQ

NSVMMUN2132LT1G

onsemiIn Stock: 9998NSVMMUN2132LT1G Datasheet

SimilarRFQ

PDTA143ET,215

Nexperia USA Inc.In Stock: 2690PDTA143ET,215 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the RN2401,LF is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Criteria:

• Transistor Type: PNP - Pre-Biased configuration
• Maximum Collector Current (Ic): 100 mA
• Collector-Emitter Breakdown Voltage: 50 V
• Base Resistor (R1) and Emitter-Base Resistor (R2): 4.7 kOhms each
• Package / Case: TO-236-3, SC-59, SOT-23-3 (surface mount, three-terminal)
• Mounting Type: Surface Mount
• Compliance: RoHS3 Compliant, MSL 1

Acceptable Variation Parameters:

• DC Current Gain (hFE): Minimum values of 15 or higher at specified test conditions
• Vce Saturation: Values between 150 mV and 300 mV at specified bias conditions
• Frequency - Transition: 200 MHz or higher
• Power Dissipation: 200 mW or higher
• Current - Collector Cutoff: Up to 1 µA

All identified substitute parts meet these criteria and are functionally interchangeable within the RN2401,LF application space.

Parameter Comparison

Engineering Selection Recommendations

All identified substitute parts maintain active product status and full RoHS3 compliance with MSL 1 rating, ensuring compatibility with current manufacturing and environmental standards.

DTA143ECAT116 and DTA143EKAT146 (Rohm Semiconductor): Both parts are functionally equivalent to the RN2401,LF with identical electrical specifications. The primary distinction is packaging designation (SST3 versus SMT3). Both are suitable for direct substitution with 227,300 units of DTA143EKAT146 available in inventory.

MMUN2132LT1G and NSVMMUN2132LT1G (onsemi): These parts operate within acceptable parameter ranges with slightly lower DC current gain specifications (15 @ 5mA, 10V versus 30 @ 10mA, 5V) and improved saturation voltage performance (250 mV versus 300 mV). The NSVMMUN2132LT1G designation indicates a non-stock variant. Both are supplied in Tape & Reel packaging.

PDTA143ET,215 (Nexperia USA Inc.): This part provides superior saturation voltage performance (150 mV) and higher power dissipation capability (250 mW). Current-collector cutoff specification is 1 µA, which is acceptable within the substitution criteria. Supplied in TO-236AB packaging with Tape & Reel format.

Frequently Asked Questions (FAQ)

Q: Can the RN2401,LF be replaced with any of these substitute parts without circuit modification?

A: Yes. All identified substitute parts share identical critical parameters: 50 V breakdown voltage, 100 mA maximum collector current, 4.7 kOhm base and emitter-base resistors, and SOT-23-3 package configuration. Direct pin-for-pin substitution is supported.

Q: What is the difference between the Rohm DTA143ECAT116 and DTA143EKAT146 parts?

A: Both parts are electrically identical. The difference is in the supplier device package designation: DTA143ECAT116 uses SST3 packaging while DTA143EKAT146 uses SMT3 packaging. Both are compatible with the RN2401,LF application.

Q: Why do the onsemi MMUN2132LT1G parts show different DC current gain specifications?

A: The onsemi parts specify DC current gain at different test conditions (15 @ 5mA, 10V) compared to the RN2401,LF (30 @ 10mA, 5V). Both values meet the minimum gain requirement for pre-biased transistor operation and are within acceptable substitution parameters.

Q: Is the Nexperia PDTA143ET,215 a better choice than the RN2401,LF?

A: The PDTA143ET,215 offers improved saturation voltage performance (150 mV versus 300 mV) and higher power dissipation capability (250 mW versus 200 mW). Selection depends on specific application requirements. Both parts are functionally equivalent for standard switching applications.

Q: Are all substitute parts available in the same packaging format?

A: All substitute parts use the TO-236-3, SC-59, SOT-23-3 package family. Packaging format differences (Cut Tape, Digi-Reel, Tape & Reel) relate to supply method rather than component form factor and do not affect circuit compatibility.

Q: What compliance certifications apply to all substitute parts?

A: All parts listed are RoHS3 compliant with MSL 1 (unlimited moisture sensitivity). REACH status is unaffected for all parts. ECCN classification is EAR99 for all parts except MMUN2132LT1G and NSVMMUN2132LT1G, which are classified under HTSUS 8541.21.0095.

Q: Can I use these parts interchangeably in production?

A: Yes. All substitute parts meet the same electrical and mechanical specifications required for the RN2401,LF application. Inventory availability and lead time considerations may influence selection, but functional interchangeability is confirmed.