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RN2310,LF Equivalent & Substitute Parts
Part Overview
The RN2310,LF is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and is housed in an SC-70 (SOT-323) package. The component features a 4.7 kOhm base resistor and is rated for 100 mW maximum power dissipation with a 200 MHz transition frequency.
The RN2310,LF holds Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1). Equivalent and substitute parts are identified based on matching electrical specifications and mechanical compatibility within the pre-biased PNP transistor category.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP - Pre-Biased | — |
| Voltage - Collector Emitter Breakdown (Max) | 50 | V |
| Current - Collector (Ic) (Max) | 100 | mA |
| Resistor - Base (R1) | 4.7 | kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V | — |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | — |
| Frequency - Transition | 200 | MHz |
| Power - Max | 100 | mW |
| Package / Case | SC-70, SOT-323 | — |
| Mounting Type | Surface Mount | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitute parts for the RN2310,LF are identified based on the following critical parameters that determine functional equivalence:
Primary Matching Criteria:
- Transistor Type: PNP - Pre-Biased
- Voltage - Collector Emitter Breakdown: 50 V
- Current - Collector (Ic) (Max): 100 mA
- Resistor - Base (R1): 4.7 kOhms
- Package / Case: SC-70 or SOT-323
- Mounting Type: Surface Mount
- RoHS Status: ROHS3 Compliant
Secondary Compatibility Factors:
- DC Current Gain (hFE) minimum specifications
- Vce Saturation characteristics
- Frequency - Transition performance
- Power dissipation rating
- Moisture Sensitivity Level
Parts are grouped into direct equivalents (matching all primary criteria) and functional substitutes (matching core electrical specifications with minor parameter variations). The base resistor value of 4.7 kOhms is a defining characteristic for the RN2310,LF and is preserved in direct equivalent parts.
Parameter Comparison
| Part Number | Manufacturer | Ic (Max) mA | Vce Breakdown (Max) V | R1 (Base) kOhms | hFE (Min) @ Ic, Vce | Vce Sat (Max) @ Ib, Ic | Freq - Transition MHz | Power (Max) mW | Package | RoHS Status |
|---|---|---|---|---|---|---|---|---|---|---|
| RN2310,LF | Toshiba | 100 | 50 | 4.7 | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 200 | 100 | SC-70, SOT-323 | ROHS3 |
| DDTA113TUA-7-F | Diodes Inc. | 100 | 50 | 1 | 100 @ 1mA, 5V | 300mV @ 1mA, 10mA | 250 | 200 | SC-70, SOT-323 | ROHS3 |
| DDTA114TUA-7-F | Diodes Inc. | 100 | 50 | 10 | 100 @ 1mA, 5V | 300mV @ 100µA, 1mA | 250 | 200 | SC-70, SOT-323 | ROHS3 |
| DDTA115TUA-7-F | Diodes Inc. | 100 | 50 | 100 | 100 @ 1mA, 5V | 300mV @ 100µA, 1mA | 250 | 200 | SC-70, SOT-323 | ROHS3 |
| DDTA123TUA-7-F | Diodes Inc. | 100 | 50 | 2.2 | 100 @ 1mA, 5V | 300mV @ 500µA, 5mA | 250 | 200 | SC-70, SOT-323 | ROHS3 |
| DDTA124TUA-7-F | Diodes Inc. | 100 | 50 | 22 | 100 @ 1mA, 5V | 300mV @ 500µA, 5mA | 250 | 200 | SC-70, SOT-323 | ROHS3 |
| DDTA143TUA-7-F | Diodes Inc. | 100 | 50 | 4.7 | 100 @ 1mA, 5V | 300mV @ 250µA, 2.5mA | 250 | 200 | SC-70, SOT-323 | ROHS3 |
| DTA143TUAT106 | Rohm Semiconductor | 100 | 50 | 4.7 | 100 @ 1mA, 5V | 300mV @ 250µA, 5mA | 250 | 200 | SC-70, SOT-323 | ROHS3 |
| MUN5116T1G | onsemi | 100 | 50 | 4.7 | 160 @ 5mA, 10V | 250mV @ 1mA, 10mA | 202 | 202 | SC-70, SOT-323 | ROHS3 |
| PDTA143TU,115 | Nexperia USA Inc. | 100 | 50 | 4.7 | 200 @ 1mA, 5V | 150mV @ 250µA, 5mA | 200 | 200 | SC-70, SOT-323 | ROHS3 |
Engineering Selection Recommendations
Direct Equivalents (Identical Base Resistor Value - 4.7 kOhms):
The following parts share the 4.7 kOhm base resistor specification with the RN2310,LF and are suitable for direct substitution in applications where the base resistor value is a critical design parameter:
-
DDTA143TUA-7-F (Diodes Incorporated): Matches core electrical specifications with enhanced power rating (200 mW vs. 100 mW) and higher transition frequency (250 MHz vs. 200 MHz). Active product status with ROHS3 compliance and REACH unaffected designation.
-
DTA143TUAT106 (Rohm Semiconductor): Provides equivalent electrical performance with matching base resistor and saturation characteristics. Active product status with ROHS3 compliance and REACH unaffected designation.
-
MUN5116T1G (onsemi): Delivers equivalent core specifications with improved saturation voltage (250 mV vs. 300 mV) and higher power rating (202 mW). Active product status with ROHS3 compliance and REACH unaffected designation.
-
PDTA143TU,115 (Nexperia USA Inc.): Offers superior DC current gain (200 vs. 120) and lower saturation voltage (150 mV vs. 300 mV), providing enhanced switching performance. Active product status with ROHS3 compliance and REACH unaffected designation.
Functional Substitutes (Alternative Base Resistor Values):
The DDTA series from Diodes Incorporated provides a range of pre-biased PNP transistors with identical electrical ratings but different base resistor values. These parts are suitable for applications where the base resistor value can be adapted to circuit requirements:
- DDTA113TUA-7-F: 1 kOhm base resistor for applications requiring lower base impedance.
- DDTA114TUA-7-F: 10 kOhm base resistor for applications requiring higher base impedance.
- DDTA115TUA-7-F: 100 kOhm base resistor for applications requiring maximum base impedance.
- DDTA123TUA-7-F: 2.2 kOhm base resistor for intermediate base impedance applications.
- DDTA124TUA-7-F: 22 kOhm base resistor for high-impedance base circuit applications.
All substitute parts maintain Active product status, ROHS3 compliance, and SC-70/SOT-323 surface mount packaging. Selection among substitutes depends on specific circuit requirements for base resistor impedance and performance characteristics such as saturation voltage and current gain.
Frequently Asked Questions (FAQ)
Q: Can DDTA143TUA-7-F be used as a direct replacement for RN2310,LF?
A: Yes. Both parts share identical base resistor value (4.7 kOhms), collector-emitter breakdown voltage (50 V), maximum collector current (100 mA), and SC-70/SOT-323 package specifications. DDTA143TUA-7-F provides enhanced power rating (200 mW vs. 100 mW) and higher transition frequency (250 MHz vs. 200 MHz). Both are Active products with ROHS3 compliance.
Q: What is the significance of the base resistor (R1) value in pre-biased transistor selection?
A: The base resistor value determines the input impedance and biasing characteristics of the pre-biased transistor. The RN2310,LF features a 4.7 kOhm base resistor. Direct substitutes must maintain this value to preserve circuit biasing behavior. Alternative base resistor values (1 kOhm, 10 kOhm, 100 kOhms, etc.) are available in the DDTA series but require circuit evaluation to confirm compatibility.
Q: Are all substitute parts compatible with the SC-70 package footprint?
A: Yes. All listed substitute parts are housed in SC-70 or SOT-323 packages, which are mechanically and electrically equivalent surface mount packages. PCB footprints are compatible across all listed parts.
Q: What are the key electrical differences between RN2310,LF and PDTA143TU,115?
A: Both parts share the 4.7 kOhm base resistor, 50 V breakdown voltage, and 100 mA maximum collector current. PDTA143TU,115 features higher DC current gain (200 vs. 120 @ 1mA, 5V) and significantly lower saturation voltage (150 mV vs. 300 mV @ 250µA, 5mA). These characteristics result in faster switching and reduced power dissipation in saturation. Both are Active products with ROHS3 compliance.
Q: Can DDTA114TUA-7-F replace RN2310,LF in all applications?
A: DDTA114TUA-7-F differs in base resistor value (10 kOhms vs. 4.7 kOhms). This difference affects input impedance and biasing behavior. Substitution is possible only if circuit design accommodates the higher base impedance. Electrical ratings for voltage, current, and power are compatible. Both are Active products with ROHS3 compliance.
Q: What is the inventory status of substitute parts?
A: DDTA123TUA-7-F has the highest inventory (45,300 pcs), followed by DDTA114TUA-7-F (38,100 pcs). DDTA143TUA-7-F maintains 20,200 pcs in stock. MUN5116T1G has limited availability (918 pcs). PDTA143TU,115 has 3,188 pcs available. Inventory levels should be verified with suppliers for production requirements.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All listed substitute parts carry ROHS3 compliance certification. The RN2310,LF is also ROHS3 compliant. MSL rating is 1 (Unlimited) for all parts, indicating no moisture sensitivity restrictions during storage and handling.
Q: What is the difference between MUN5116T1G and other 4.7 kOhm base resistor substitutes?
A: MUN5116T1G (onsemi) provides improved saturation voltage (250 mV vs. 300 mV) and higher power rating (202 mW vs. 100-200 mW). DC current gain is specified at different test conditions (160 @ 5mA, 10V vs. 100-120 @ 1mA, 5V), indicating superior switching performance. Transition frequency is 202 MHz. All other core specifications match the RN2310,LF.
Q: How do I determine which substitute part is best for my application?
A: Selection depends on three factors: (1) Base resistor value requirement—use DDTA143TUA-7-F, DTA143TUAT106, MUN5116T1G, or PDTA143TU,115 for 4.7 kOhm matching; (2) Performance requirements—PDTA143TU,115 offers lowest saturation voltage and highest current gain; MUN5116T1G provides balanced performance with improved saturation; (3) Availability and cost—verify inventory and pricing with suppliers. All parts are Active products with ROHS3 compliance.
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