RN2119MFV(TPL3) Equivalent & Substitute Parts

Part Overview

The RN2119MFV(TPL3) is an active pre-biased PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. This surface mount device operates at 50 V maximum collector-emitter breakdown voltage with a maximum collector current of 100 mA and 150 mW power dissipation. The device is packaged in SOT-723 (VESM) configuration and is RoHS compliant with unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical specifications and mechanical compatibility allow direct replacement in circuit applications. Substitution becomes necessary due to component availability, supply chain considerations, or design flexibility requirements while maintaining functional equivalence.

Substiute Parts

RN2119MFV(TPL3)

Toshiba Semiconductor and StorageIn Stock: 3626RN2119MFV(TPL3) Datasheet

Current PartRFQ

DDTA113TE-7-F

Diodes IncorporatedIn Stock: 2009DDTA113TE-7-F Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the RN2119MFV(TPL3) is determined by electrical and mechanical parameter equivalence. The following criteria establish substitution validity:

Electrical Equivalence Requirements:

• Transistor type must be PNP - Pre-Biased configuration
• Maximum collector current (Ic) must be 100 mA or greater
• Maximum collector-emitter breakdown voltage must be 50 V or greater
• Base resistor (R1) must be 1 kOhms
• Maximum power dissipation must be 150 mW or greater
• DC current gain (hFE) minimum specification must support 120 @ 1mA, 5V or equivalent performance envelope

Mechanical Compatibility Requirements:

• Surface mount mounting type
• Package compatibility with SOT-723 or equivalent footprint dimensions
• RoHS compliance status must be maintained

The DDTA113TE-7-F from Diodes Incorporated meets all electrical and mechanical substitution criteria for the RN2119MFV(TPL3).

Parameter Comparison

Engineering Selection Recommendations

Both the RN2119MFV(TPL3) and DDTA113TE-7-F are active products with current manufacturing status and full RoHS compliance. Selection between these devices is based on the following engineering considerations:

RN2119MFV(TPL3) Selection Criteria:

• Primary device with SOT-723 package footprint
• Higher DC current gain minimum (120 vs. 100) provides improved gain margin
• Lower collector cutoff current (100 nA vs. 500 nA) for applications requiring minimal leakage
• Toshiba Semiconductor manufacturing source

DDTA113TE-7-F Selection Criteria:

• Qualified substitute with SOT-523 package footprint
• ROHS3 compliance status
• Transition frequency specification of 250 MHz available for high-frequency applications
• Diodes Incorporated manufacturing source
• Tape & Reel packaging format

Both devices maintain identical electrical performance in core parameters: 100 mA maximum collector current, 50 V breakdown voltage, 1 kOhm base resistor, and 150 mW power rating. Package footprint differences (SOT-723 vs. SOT-523) require PCB layout verification prior to substitution. Both devices carry unlimited moisture sensitivity rating (MSL 1) and are RoHS compliant.

Frequently Asked Questions (FAQ)

Q: Can DDTA113TE-7-F directly replace RN2119MFV(TPL3) on existing PCBs?

A: Direct PCB replacement requires footprint compatibility verification. The RN2119MFV(TPL3) uses SOT-723 package while DDTA113TE-7-F uses SOT-523 package. Physical dimensions and pin layouts differ between these packages. PCB redesign or adapter solutions may be necessary.

Q: What are the key electrical differences between these devices?

A: The primary electrical differences are: DC current gain minimum (RN2119MFV: 120 vs. DDTA113TE-7-F: 100 @ 1mA, 5V), collector cutoff current (RN2119MFV: 100 nA vs. DDTA113TE-7-F: 500 nA), and saturation voltage test conditions (RN2119MFV: 500µA, 5mA vs. DDTA113TE-7-F: 1mA, 10mA). Core ratings for collector current, breakdown voltage, and power dissipation are identical.

Q: Are both devices RoHS compliant?

A: Yes. RN2119MFV(TPL3) is RoHS Compliant. DDTA113TE-7-F is ROHS3 Compliant. Both meet RoHS requirements for lead-free and restricted substance compliance.

Q: What is the moisture sensitivity rating for these devices?

A: Both devices carry Moisture Sensitivity Level (MSL) 1, indicating unlimited shelf life without moisture control requirements.

Q: Does DDTA113TE-7-F offer any performance advantages?

A: DDTA113TE-7-F includes a transition frequency specification of 250 MHz, providing documented high-frequency performance capability. This specification is not provided for RN2119MFV(TPL3). For applications requiring high-frequency operation, DDTA113TE-7-F offers specified frequency performance.

Q: What packaging formats are available?

A: RN2119MFV(TPL3) is supplied in Cut Tape (CT) format. DDTA113TE-7-F is supplied in Tape & Reel (TR) format. Packaging format selection depends on assembly process requirements and volume considerations.

Q: Are these pre-biased transistors?

A: Yes. Both devices are pre-biased PNP transistors with integrated 1 kOhm base resistor. This internal biasing network simplifies circuit design compared to discrete transistor implementations.