RN2109MFV,L3F Equivalent & Substitute Parts

Part Overview

The RN2109MFV,L3F is an active pre-biased PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. This surface mount component operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 150 mW power dissipation. The device is housed in a SOT-723 package and is RoHS3 compliant with unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical specifications and mechanical compatibility are maintained across the same package type and functional classification. The RN2109MFV,L3F remains in active production status; however, alternative sources may be required due to inventory availability, supply chain considerations, or design flexibility requirements.

Substiute Parts

RN2109MFV,L3F

Toshiba Semiconductor and StorageIn Stock: 8685RN2109MFV,L3F Datasheet

Current PartRFQ

DTA144WM3T5G

onsemiIn Stock: 17455DTA144WM3T5G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the RN2109MFV,L3F is determined by the following critical parameters:

Electrical Specifications:

• Transistor classification: PNP - Pre-Biased
• Maximum collector current: 100 mA
• Collector-emitter breakdown voltage: 50 V
• Base resistor (R1): 47 kOhms
• Emitter-base resistor (R2): 22 kOhms

Mechanical Specifications:

• Package type: SOT-723
• Mounting configuration: Surface Mount
• Tape & Reel packaging format

Compliance Requirements:

• RoHS3 compliance
• Moisture sensitivity level: 1 (Unlimited)

Substitute parts must match all electrical parameters, maintain identical package and mounting specifications, and satisfy the same compliance certifications. The DTA144WM3T5G from onsemi meets these criteria with equivalent base and emitter resistor values, identical collector current rating, and matching collector-emitter breakdown voltage within the specified SOT-723 package.

Parameter Comparison

Engineering Selection Recommendations

Both the RN2109MFV,L3F and DTA144WM3T5G are active production components with RoHS3 compliance and unlimited moisture sensitivity ratings. The devices are functionally equivalent across all specified electrical parameters including collector current, breakdown voltage, and integrated base and emitter resistor values.

The DTA144WM3T5G offers increased maximum power dissipation (260 mW versus 150 mW), providing additional thermal margin in applications approaching the RN2109MFV,L3F power limit. Both components are packaged in SOT-723 surface mount configuration and are suitable for direct substitution in existing designs without layout modification.

Selection between these parts should be based on availability, supply chain requirements, and application-specific thermal considerations. Both devices satisfy identical compliance and certification requirements.

Frequently Asked Questions (FAQ)

Q: Can the DTA144WM3T5G replace the RN2109MFV,L3F in existing designs?

A: Yes. Both devices are pre-biased PNP transistors with identical collector current (100 mA), collector-emitter breakdown voltage (50 V), base resistor (47 kOhms), and emitter-base resistor (22 kOhms). The SOT-723 package and surface mount configuration are identical, enabling direct substitution without circuit board redesign.

Q: What are the differences between these two parts?

A: The primary difference is maximum power dissipation: the RN2109MFV,L3F is rated at 150 mW while the DTA144WM3T5G is rated at 260 mW. The DTA144WM3T5G also specifies different DC current gain test conditions (80 @ 5mA, 10V versus 70 @ 10mA, 5V) and slightly different saturation voltage specifications (250mV @ 300µA, 10mA versus 300mV @ 250µA, 5mA). All other electrical and mechanical parameters are equivalent.

Q: Are both parts RoHS3 compliant?

A: Yes. Both the RN2109MFV,L3F and DTA144WM3T5G are RoHS3 compliant with moisture sensitivity level 1 (unlimited).

Q: What package type is used for these components?

A: Both components use the SOT-723 surface mount package. This is a six-pin package suitable for automated assembly processes.

Q: Can these parts be used interchangeably in high-power applications?

A: The DTA144WM3T5G supports higher power dissipation (260 mW) compared to the RN2109MFV,L3F (150 mW). For applications approaching or exceeding 150 mW, the DTA144WM3T5G provides additional thermal headroom. Both devices maintain identical electrical performance within their respective power ratings.

Q: What is the significance of the pre-biased configuration?

A: Pre-biased transistors integrate internal base and emitter resistors (47 kOhms and 22 kOhms respectively in these devices) to establish a defined bias condition. This simplifies circuit design by reducing the number of external components required for proper transistor operation.