RN2107MFV,L3F Equivalent & Substitute Parts

Part Overview

The RN2107MFV,L3F is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount device operates at 50 V maximum collector-emitter breakdown voltage with a maximum collector current of 100 mA and 150 mW power dissipation. The device features integrated base and emitter-base resistors (10 kΩ and 47 kΩ respectively) in a SOT-723 package, classified as VESM by the supplier. The part maintains Active product status and is RoHS Compliant with MSL 1 (Unlimited) moisture sensitivity rating. Substitute parts are identified when electrical parameters, mechanical packaging, and compliance certifications align with the original specification.

Substiute Parts

RN2107MFV,L3F

Toshiba Semiconductor and StorageIn Stock: 1025RN2107MFV,L3F Datasheet

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DTA114YM3T5G

onsemiIn Stock: 8592DTA114YM3T5G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the RN2107MFV,L3F is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• Transistor Type: PNP - Pre-Biased configuration
• Maximum Collector Current (Ic): 100 mA
• Maximum Collector-Emitter Breakdown Voltage: 50 V
• Base Resistor (R1): 10 kΩ
• Emitter-Base Resistor (R2): 47 kΩ
• Minimum DC Current Gain (hFE): 80
• Maximum Collector Cutoff Current: 500 nA
• Package / Case: SOT-723
• Mounting Type: Surface Mount

Compliance Parameters:

• RoHS Status: RoHS Compliant or equivalent
• Moisture Sensitivity Level: MSL 1 (Unlimited)
• Product Status: Active

The DTA114YM3T5G from onsemi satisfies all critical electrical parameters and mechanical packaging requirements. Variations in maximum power dissipation (260 mW versus 150 mW) and Vce saturation test conditions represent enhanced performance characteristics that do not restrict substitution eligibility.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: DTA114YM3T5G (onsemi)

The DTA114YM3T5G is a direct electrical and mechanical substitute for the RN2107MFV,L3F. Both devices are Active status products with identical core electrical specifications: 100 mA maximum collector current, 50 V breakdown voltage, 10 kΩ base resistor, 47 kΩ emitter-base resistor, and 80 minimum DC current gain. Both are packaged in SOT-723 surface mount configuration with MSL 1 (Unlimited) moisture sensitivity rating.

The DTA114YM3T5G carries ROHS3 Compliant certification, which supersedes the RoHS Compliant status of the original part, ensuring continued regulatory compliance. The higher maximum power dissipation rating (260 mW versus 150 mW) provides enhanced thermal margin without affecting circuit compatibility.

Selection between these parts is determined by availability, supply chain requirements, and packaging format preference (Toshiba VESM versus onsemi SOT-723 supplier designation). Both parts are suitable for direct substitution in applications requiring pre-biased PNP transistors with the specified electrical and mechanical characteristics.

Frequently Asked Questions (FAQ)

Q: What defines a valid substitute for the RN2107MFV,L3F?

A: A valid substitute must match all critical electrical parameters: PNP pre-biased transistor type, 100 mA maximum collector current, 50 V maximum collector-emitter breakdown voltage, 10 kΩ base resistor, 47 kΩ emitter-base resistor, 80 minimum DC current gain, and 500 nA maximum collector cutoff current. The substitute must also use SOT-723 surface mount packaging and maintain MSL 1 (Unlimited) moisture sensitivity rating with Active product status and RoHS compliance.

Q: Can the DTA114YM3T5G replace the RN2107MFV,L3F in existing designs?

A: Yes. The DTA114YM3T5G meets all electrical and mechanical specifications of the RN2107MFV,L3F. Both devices feature identical maximum collector current (100 mA), breakdown voltage (50 V), integrated resistor values (10 kΩ and 47 kΩ), and DC current gain (80 minimum). Both are packaged in SOT-723 and carry equivalent moisture sensitivity ratings. The higher power dissipation rating of the DTA114YM3T5G (260 mW) does not restrict substitution.

Q: Are there packaging differences between these parts?

A: Both the RN2107MFV,L3F and DTA114YM3T5G use SOT-723 surface mount packaging. The Toshiba part is designated VESM by the supplier, while the onsemi part is designated SOT-723. These designations refer to the same physical package form factor and pin configuration, with no mechanical incompatibility.

Q: What is the significance of the higher power rating in the DTA114YM3T5G?

A: The DTA114YM3T5G maximum power dissipation of 260 mW exceeds the RN2107MFV,L3F rating of 150 mW. This represents enhanced thermal performance and provides additional design margin. The higher rating does not affect circuit operation or compatibility; it indicates the substitute can handle equivalent or greater thermal stress without performance degradation.

Q: Do compliance certifications differ between these parts?

A: The RN2107MFV,L3F carries RoHS Compliant certification. The DTA114YM3T5G carries ROHS3 Compliant certification, which represents an updated compliance standard. Both certifications ensure lead-free and hazardous substance restrictions are met. ROHS3 Compliant status is compatible with applications requiring RoHS Compliant components.

Q: What are the DC current gain test conditions for each part?

A: The RN2107MFV,L3F specifies minimum DC current gain (hFE) of 80 at Ic = 10 mA and Vce = 5 V. The DTA114YM3T5G specifies minimum DC current gain (hFE) of 80 at Ic = 5 mA and Vce = 10 V. Both parts meet the 80 minimum gain requirement; the test conditions differ but do not affect substitution eligibility.

Q: Are there differences in Vce saturation characteristics?

A: The RN2107MFV,L3F specifies maximum Vce saturation of 300 mV at Ib = 250 µA and Ic = 5 mA. The DTA114YM3T5G specifies maximum Vce saturation of 250 mV at Ib = 300 µA and Ic = 10 mA. Both values represent acceptable saturation performance for pre-biased transistor applications. The DTA114YM3T5G exhibits lower saturation voltage under its specified test conditions, indicating equivalent or superior switching performance.