RN2107,LF(CT Pre-Biased PNP Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The RN2107,LF(CT is a pre-biased PNP bipolar transistor manufactured by Toshiba Semiconductor and Storage, classified as an active product. This surface mount device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and is designed for general-purpose switching and amplification applications in compact form factors. Substitute parts are identified to provide design flexibility, inventory alternatives, and sourcing options while maintaining electrical and mechanical compatibility within the specified parameter ranges.

Substiute Parts

RN2107,LF(CT

Toshiba Semiconductor and StorageIn Stock: 1142RN2107,LF(CT Datasheet

Current PartRFQ

DTA114YET1G

onsemiIn Stock: 1276DTA114YET1G Datasheet

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SDTA114YET1G

onsemiIn Stock: 3744SDTA114YET1G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the RN2107,LF(CT are qualified based on the following electrical and mechanical parameters:

Critical Matching Parameters:

• Transistor Type: PNP - Pre-Biased configuration
• Maximum Collector Current (Ic): 100 mA
• Collector-Emitter Breakdown Voltage: 50 V
• Base Resistor (R1): 10 kOhms
• Emitter-Base Resistor (R2): 47 kOhms
• Minimum DC Current Gain (hFE): 80
• Collector Cutoff Current: 500 nA maximum
• Package / Case: SC-75, SOT-416
• Mounting Type: Surface Mount
• RoHS Compliance: ROHS3 Compliant
• Moisture Sensitivity Level: 1 (Unlimited)

The substitute parts DTA114YET1G and SDTA114YET1G, both manufactured by onsemi, meet all critical electrical parameters and mechanical specifications. Both devices maintain identical base and emitter-base resistor values, support the same maximum collector current, and operate within the same voltage rating. All substitute parts are packaged in SC-75, SOT-416 surface mount form factors and comply with ROHS3 standards with MSL rating of 1.

Parameter Comparison

Engineering Selection Recommendations

All three parts—RN2107,LF(CT, DTA114YET1G, and SDTA114YET1G—are active products with ROHS3 compliance and MSL rating of 1 (Unlimited), indicating full environmental and regulatory compatibility. The substitute parts from onsemi provide equivalent electrical performance with identical pre-biased resistor networks and maximum collector current ratings.

Selection between these parts should be based on:

Availability and Inventory: SDTA114YET1G offers the highest inventory level at 3657 pieces, followed by DTA114YET1G at 1200 pieces, and RN2107,LF(CT at 1095 pieces.

Power Dissipation Margin: DTA114YET1G and SDTA114YET1G both support 200 mW maximum power dissipation, compared to 100 mW for the RN2107,LF(CT, providing additional thermal headroom in power-constrained applications.

Manufacturer Preference: Selection may depend on established supply chain relationships, qualification requirements, or design documentation tied to specific manufacturers.

All parts maintain identical package form factors (SC-75, SOT-416) and surface mount compatibility, ensuring direct mechanical and electrical interchangeability within the specified parameter envelope.

Frequently Asked Questions (FAQ)

Q: Can DTA114YET1G and SDTA114YET1G be used as direct replacements for RN2107,LF(CT?

A: Yes. Both onsemi parts maintain identical electrical specifications for collector current (100 mA maximum), collector-emitter breakdown voltage (50 V), base resistor (10 kOhms), emitter-base resistor (47 kOhms), and minimum DC current gain (80). All three parts are packaged in SC-75, SOT-416 surface mount form factors with identical pin configurations, enabling direct substitution without circuit modification.

Q: What is the significance of the pre-biased resistor network in these transistors?

A: The pre-biased configuration includes integrated base (R1 = 10 kOhms) and emitter-base (R2 = 47 kOhms) resistors. These resistors establish the transistor's biasing network, reducing external component count and simplifying circuit design. All substitute parts maintain identical resistor values, ensuring equivalent biasing behavior and switching characteristics.

Q: Are there differences in power dissipation between the main part and substitutes?

A: The RN2107,LF(CT is rated for 100 mW maximum power dissipation, while DTA114YET1G and SDTA114YET1G are rated for 200 mW. This difference provides additional thermal margin in the substitute parts but does not affect electrical compatibility. Applications operating within the 100 mW envelope are fully compatible with all three parts.

Q: Do all parts meet the same environmental and compliance standards?

A: Yes. RN2107,LF(CT, DTA114YET1G, and SDTA114YET1G are all ROHS3 compliant with Moisture Sensitivity Level 1 (Unlimited). All parts are classified as active products with no known end-of-life status, ensuring long-term availability and regulatory compliance.

Q: What are the package and mounting considerations for these parts?

A: All three parts use the SC-75, SOT-416 surface mount package with identical pin assignments. This ensures mechanical and electrical interchangeability on printed circuit boards without requiring layout modifications or rework procedures.

Q: How do the DC current gain specifications differ between parts?

A: The RN2107,LF(CT specifies minimum DC current gain (hFE) of 80 at 10 mA collector current and 5 V collector-emitter voltage. DTA114YET1G and SDTA114YET1G specify the same minimum hFE of 80 but at 5 mA collector current and 10 V collector-emitter voltage. Both measurement conditions yield equivalent gain performance within the specified operating envelope.

Q: Are there any saturation voltage differences that affect circuit performance?

A: The RN2107,LF(CT specifies maximum saturation voltage (Vce) of 300 mV at 250 µA base current and 5 mA collector current. DTA114YET1G and SDTA114YET1G specify 250 mV at 300 µA base current and 10 mA collector current. Both values are within acceptable switching performance ranges for pre-biased transistor applications.