RN2107ACT(TPL3) Equivalent & Substitute Parts

Part Overview

The RN2107ACT(TPL3) is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount device is designed for applications requiring integrated base bias resistors, eliminating the need for external biasing networks. The part operates at a maximum collector voltage of 50 V with a maximum collector current of 80 mA and dissipates up to 100 mW of power.

The RN2107ACT(TPL3) is classified as obsolete. Locating equivalent or substitute components is necessary to support ongoing production requirements, maintenance operations, and design continuity. Suitable alternatives must maintain electrical compatibility across critical parameters including voltage ratings, current specifications, and integrated resistor values while accommodating available packaging options.

Substiute Parts

RN2107ACT(TPL3)
Toshiba Semiconductor and StorageIn Stock: 738RN2107ACT(TPL3) Datasheet
RN2107ACT(TPL3)
Current Part
RN2107MFV,L3F
Toshiba Semiconductor and StorageIn Stock: 1025RN2107MFV,L3F Datasheet
RN2107MFV,L3F
Similar
PDTA114TMB,315
NXP SemiconductorsIn Stock: 669225PDTA114TMB,315 Datasheet
PDTA114TMB,315
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP - Pre-Biased
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 80 mA
Power - Max 100 mW
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 150 mV
Current - Collector Cutoff (Max) 500 nA
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the RN2107ACT(TPL3) is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor type must be PNP pre-biased BJT
  • Voltage rating (Vce breakdown) must be 50 V or greater
  • Maximum collector current must be 80 mA or greater
  • Base resistor (R1) must be 10 kOhms
  • Emitter-base resistor (R2) must be 47 kOhms
  • DC current gain (hFE) minimum specification must be 80 @ 10mA, 5V or equivalent
  • Mounting type must be surface mount
  • Moisture sensitivity level must be 1 (Unlimited)

Secondary Considerations:

  • Power dissipation rating of 100 mW or greater
  • Collector cutoff current specification of 500 nA or lower
  • Product status (active status preferred for long-term availability)
  • Compliance certifications (RoHS status, REACH status where applicable)

Parts meeting all primary criteria are classified as direct electrical equivalents. Variations in package type, saturation voltage, or power rating above the minimum threshold do not disqualify a part from substitution provided all primary electrical parameters are satisfied.

Parameter Comparison

Parameter RN2107ACT(TPL3) RN2107MFV,L3F PDTA114TMB,315
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage NXP Semiconductors
Product Status Obsolete Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased Pre-Biased Bipolar Transistor (BJT)
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V Not specified in provided data
Current - Collector (Ic) (Max) 80 mA 100 mA Not specified in provided data
Power - Max 100 mW 150 mW Not specified in provided data
Resistor - Base (R1) 10 kOhms 10 kOhms Not specified in provided data
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms Not specified in provided data
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V 80 @ 10mA, 5V Not specified in provided data
Vce Saturation (Max) @ Ib, Ic 150 mV 300 mV Not specified in provided data
Current - Collector Cutoff (Max) 500 nA 500 nA Not specified in provided data
Mounting Type Surface Mount Surface Mount Not specified in provided data
Package / Case SC-101, SOT-883 SOT-723 Not specified in provided data
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
RoHS Status Not specified in provided data RoHS Compliant Not specified in provided data

Engineering Selection Recommendations

RN2107MFV,L3F (Toshiba Semiconductor and Storage)

The RN2107MFV,L3F is an active product that satisfies all primary electrical substitution criteria for the RN2107ACT(TPL3). Both devices share identical base and emitter-base resistor values (10 kOhms and 47 kOhms respectively), matching DC current gain specifications, and equivalent collector cutoff current ratings. The RN2107MFV,L3F provides enhanced specifications with a maximum collector current of 100 mA (versus 80 mA) and increased power dissipation capability of 150 mW (versus 100 mW). The saturation voltage is higher at 300 mV compared to 150 mV; this parameter difference must be evaluated within the specific application circuit to determine acceptability. The device is RoHS compliant and carries MSL 1 rating. Package type differs (SOT-723 versus SC-101/SOT-883), requiring physical layout verification. Active product status ensures long-term availability and supply chain continuity.

PDTA114TMB,315 (NXP Semiconductors)

The PDTA114TMB,315 is an active pre-biased BJT product from NXP Semiconductors. Complete electrical parameter specifications are not provided in the available data; therefore, full compatibility verification against all primary substitution criteria cannot be performed. The device carries MSL 1 rating and REACH unaffected status. This part is listed as a substitute option in the original part documentation. Detailed electrical parameter confirmation is required before implementation in production applications.

Frequently Asked Questions (FAQ)

Q: Can the RN2107MFV,L3F directly replace the RN2107ACT(TPL3) in existing designs?

A: The RN2107MFV,L3F meets all primary electrical substitution criteria including voltage rating, collector current capability, integrated resistor values, and current gain specifications. However, the package type differs (SOT-723 versus SC-101/SOT-883), requiring physical layout and footprint verification. The saturation voltage specification is higher (300 mV versus 150 mV); circuit performance must be evaluated to confirm this parameter variation is acceptable for the intended application.

Q: What is the significance of the integrated resistor values (R1 = 10 kOhms, R2 = 47 kOhms)?

A: Pre-biased BJTs incorporate internal base and emitter-base resistors that establish the device's biasing characteristics and switching behavior. These resistor values are fundamental to the device's electrical performance. Substitute parts must maintain identical resistor values to ensure equivalent circuit behavior and switching response. Deviation from these values constitutes a different device with different electrical characteristics.

Q: Why is the RN2107ACT(TPL3) classified as obsolete?

A: Obsolete classification indicates the manufacturer has discontinued production and support for this part number. Original inventory may be available from authorized distributors, but long-term supply cannot be guaranteed. Identifying active equivalent products ensures design continuity and supports ongoing production requirements.

Q: How do package differences affect substitution?

A: Package type (SC-101, SOT-883, or SOT-723) determines the physical footprint, pin configuration, and mounting requirements on the printed circuit board. While electrical performance may be equivalent, physical layout compatibility must be verified. PCB redesign or rework may be necessary to accommodate different package geometries.

Q: What does MSL 1 (Unlimited) moisture sensitivity level mean?

A: MSL 1 indicates the component has unlimited shelf life and requires no special moisture control during storage or handling. This classification simplifies inventory management and reduces the risk of moisture-induced failures during assembly and deployment.

Q: Is RoHS compliance a requirement for substitution?

A: RoHS compliance status is a regulatory and supply chain consideration rather than an electrical substitution criterion. The RN2107MFV,L3F is explicitly RoHS compliant, supporting compliance with environmental regulations in applicable markets. Compliance status should be verified against specific application and regional requirements.

Q: Can the PDTA114TMB,315 be used as a substitute without additional verification?

A: Complete electrical parameter data for the PDTA114TMB,315 is not provided in the available documentation. Although this part is referenced as a substitute option, full parameter verification against all primary substitution criteria must be completed before implementation. Obtain complete datasheets and conduct electrical compatibility analysis prior to production use.

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