RN2101ACT(TPL3) Equivalent & Substitute Parts

Part Overview

The RN2101ACT(TPL3) is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 80 mA and 100 mW power dissipation. The device features integrated base and emitter-base resistors (4.7 kOhms each) in a CST3 package configuration.

The RN2101ACT(TPL3) is classified as obsolete. Locating equivalent substitute parts is necessary to support ongoing production requirements, maintenance operations, and design continuity for applications currently utilizing this component.

Substiute Parts

RN2101ACT(TPL3)

Toshiba Semiconductor and StorageIn Stock: 890RN2101ACT(TPL3) Datasheet

Current PartRFQ

PDTA143TM,315

Nexperia USA Inc.In Stock: 1068PDTA143TM,315 Datasheet

SimilarRFQ

PDTA143TMB,315

NXP USA Inc.In Stock: 130695PDTA143TMB,315 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the RN2101ACT(TPL3) is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Transistor type must be PNP with pre-biased configuration
• Collector-emitter breakdown voltage must be 50 V or greater
• Maximum collector current must meet or exceed 80 mA
• Base resistor (R1) must be 4.7 kOhms
• Emitter-base resistor (R2) must be 4.7 kOhms
• Power dissipation capability must support 100 mW or greater

Mechanical Compatibility Requirements:

• Surface mount mounting type
• Package compatibility with SC-101 or SOT-883 footprints

The substitute parts PDTA143TM,315 and PDTA143TMB,315 satisfy all electrical and mechanical compatibility criteria. Both devices exceed the collector current specification (100 mA versus 80 mA) and power dissipation rating (250 mW versus 100 mW), providing enhanced performance margins. Both maintain identical base and emitter-base resistor values and collector-emitter breakdown voltage specifications.

Parameter Comparison

Engineering Selection Recommendations

PDTA143TM,315 (Nexperia USA Inc.)

This substitute is actively manufactured and available in high inventory (972 Pcs). The device meets all electrical specifications of the RN2101ACT(TPL3) with enhanced performance margins. The PDTA143TM,315 provides 100 mA collector current capacity and 250 mW power dissipation, exceeding the original specification. The part is RoHS3 compliant and REACH unaffected, supporting modern regulatory requirements. Packaging is supplied in Tape & Reel format, suitable for automated assembly operations.

PDTA143TMB,315 (NXP USA Inc.)

This substitute is actively manufactured with substantial inventory availability (130,664 Pcs). The device provides identical electrical performance to the PDTA143TM,315 variant with additional frequency specification (180 MHz transition frequency). The PDTA143TMB,315 is supplied in bulk packaging with DFN1006B-3 package configuration. This variant offers the highest inventory availability and supports high-volume production requirements.

Both substitute parts eliminate obsolescence risk associated with the RN2101ACT(TPL3) while maintaining electrical compatibility and providing enhanced performance specifications.

Frequently Asked Questions (FAQ)

Q: Can the PDTA143TM,315 or PDTA143TMB,315 directly replace the RN2101ACT(TPL3) in existing designs?

A: Yes. Both substitute parts maintain identical collector-emitter breakdown voltage (50 V), base resistor value (4.7 kOhms), and saturation voltage characteristics (150 mV @ specified conditions). The substitutes provide higher collector current capacity (100 mA versus 80 mA) and greater power dissipation capability (250 mW versus 100 mW), ensuring compatibility with existing circuit requirements.

Q: What are the differences between PDTA143TM,315 and PDTA143TMB,315?

A: Both devices provide identical electrical performance and meet the same substitution criteria. The primary differences are packaging format (Tape & Reel versus Bulk) and supplier device package designation (SOT-883 versus DFN1006B-3). The PDTA143TMB,315 includes transition frequency specification (180 MHz). Selection between these variants depends on assembly process requirements and inventory availability.

Q: Are there package footprint compatibility concerns?

A: Both substitute parts are specified for SC-101 and SOT-883 package configurations, matching the RN2101ACT(TPL3) footprint. The PDTA143TMB,315 uses DFN1006B-3 supplier package designation, which maintains physical and electrical compatibility with the original SOT-883 footprint. Verify PCB layout compatibility with your specific assembly process before implementation.

Q: How do the DC current gain specifications compare?

A: The RN2101ACT(TPL3) specifies minimum DC current gain of 30 @ 10mA, 5V. Both substitute parts specify minimum DC current gain of 200 @ 1mA, 5V. The substitutes provide significantly higher current gain, which may affect circuit biasing behavior. Verify that higher gain does not cause unintended circuit operation in your specific application topology.

Q: What is the significance of the higher collector cutoff current in the substitutes?

A: The RN2101ACT(TPL3) specifies maximum collector cutoff current of 500 nA, while both substitutes specify 1 µA. This represents a 2x increase in leakage current. For most applications, this difference is negligible. Applications requiring extremely low leakage current operation should evaluate this parameter against specific circuit requirements.

Q: Are regulatory compliance certifications equivalent?

A: The PDTA143TM,315 is RoHS3 compliant and REACH unaffected. The PDTA143TMB,315 specifications do not include explicit RoHS or REACH status in the provided data. Both parts share identical ECCN (EAR99) and HTSUS classifications with the original RN2101ACT(TPL3), supporting equivalent regulatory treatment for export and compliance purposes.