RN1908FE(TE85L,F) Equivalent & Substitute Parts

Part Overview

The RN1908FE(TE85L,F) is a pre-biased dual NPN bipolar transistor manufactured by Toshiba Semiconductor and Storage. This surface mount component integrates two NPN transistors with internal biasing resistors, designed for applications requiring compact switching and amplification circuits. The device operates at a maximum collector current of 100mA with a 50V collector-emitter breakdown voltage and 100mW power dissipation.

The RN1908FE(TE85L,F) maintains Active product status. Identifying equivalent and substitute parts is necessary to ensure design flexibility, manage supply chain continuity, and maintain compatibility across manufacturing revisions and sourcing alternatives.

Substiute Parts

RN1908FE(TE85L,F)

Toshiba Semiconductor and StorageIn Stock: 1107RN1908FE(TE85L,F) Datasheet

Current PartRFQ

PEMD16,115

Nexperia USA Inc.In Stock: 4423PEMD16,115 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the RN1908FE(TE85L,F) is determined by strict alignment of electrical and mechanical parameters. The following criteria establish substitution validity:

Critical Matching Parameters:

• Maximum collector current: 100mA
• Collector-emitter breakdown voltage: 50V
• Base resistor (R1): 22kOhms
• Emitter-base resistor (R2): 47kOhms
• DC current gain (hFE) minimum: 80
• Surface mount packaging: SOT-563 or SOT-666
• Moisture sensitivity level: 1 (Unlimited)

Allowable Variations:

• Power dissipation rating may exceed the original specification
• Vce saturation may differ within acceptable switching performance ranges
• Transistor configuration may include additional transistor types (such as complementary PNP) provided the NPN specifications remain unchanged
• Transition frequency may exceed the original specification

The PEMD16,115 from Nexperia USA Inc. satisfies these substitution criteria through equivalent electrical ratings and compatible packaging, despite differences in transistor configuration and power rating.

Parameter Comparison

Engineering Selection Recommendations

RN1908FE(TE85L,F) - Primary Selection

The RN1908FE(TE85L,F) is the primary component choice for new designs. This part maintains Active product status and carries RoHS Compliant certification. The device is currently in stock with 1081 units available. Use this part for all new circuit implementations requiring dual NPN pre-biased transistor functionality.

PEMD16,115 - Substitute Selection

The PEMD16,115 serves as a functional substitute when RN1908FE(TE85L,F) availability is constrained. This part meets all critical electrical parameters including collector current, breakdown voltage, and biasing resistor values. The PEMD16,115 carries ROHS3 Compliant certification and REACH Unaffected status, ensuring regulatory compliance.

Product Status Consideration

The PEMD16,115 carries a "Not For New Designs" status. This designation indicates the part is available for existing production and legacy system support but should not be selected for new circuit development. Use PEMD16,115 only when RN1908FE(TE85L,F) is unavailable and the application is limited to production support or design revision of existing products.

Compliance and Certification

Both parts satisfy RoHS requirements and maintain MSL 1 (Unlimited) moisture sensitivity ratings, permitting unrestricted storage and handling. The RN1908FE(TE85L,F) provides forward compatibility for future regulatory updates through its RoHS Compliant status.

Frequently Asked Questions (FAQ)

Q: Can PEMD16,115 replace RN1908FE(TE85L,F) in existing designs?

A: Yes. The PEMD16,115 meets all critical electrical specifications including maximum collector current (100mA), collector-emitter breakdown voltage (50V), and internal biasing resistor values (R1=22kOhms, R2=47kOhms). Both parts are available in SOT-563 and SOT-666 packages with identical pinout compatibility.

Q: What is the significance of the "Not For New Designs" status on PEMD16,115?

A: This status indicates the PEMD16,115 is in mature or declining production phase. The part remains available for production support and legacy system maintenance but should not be selected for new circuit development. For new designs, select RN1908FE(TE85L,F).

Q: Are there differences in switching performance between these parts?

A: The parts differ in Vce saturation characteristics. RN1908FE(TE85L,F) specifies 300mV maximum at 250µA base current and 5mA collector current. PEMD16,115 specifies 150mV maximum at 500µA base current and 10mA collector current. These differences reflect different measurement conditions and do not prevent functional substitution in standard switching applications.

Q: What is the difference in transistor configuration between these parts?

A: RN1908FE(TE85L,F) contains two NPN transistors. PEMD16,115 contains one NPN transistor and one PNP transistor. For applications requiring only NPN functionality, the NPN transistor within PEMD16,115 provides equivalent performance. The additional PNP transistor does not interfere with NPN operation.

Q: Do both parts support the same package options?

A: Yes. Both RN1908FE(TE85L,F) and PEMD16,115 are available in SOT-563 and SOT-666 surface mount packages. Verify the specific package variant required for your application before ordering.

Q: Are there any power dissipation limitations when substituting PEMD16,115?

A: No. PEMD16,115 has a maximum power rating of 300mW, which exceeds the RN1908FE(TE85L,F) rating of 100mW. This higher rating provides additional thermal margin and does not create compatibility issues.

Q: What is the current availability status of these parts?

A: RN1908FE(TE85L,F) has 1081 units in stock. PEMD16,115 has 4400 units in stock. Verify current inventory with your supplier before finalizing procurement decisions.

Q: Are both parts RoHS compliant?

A: Yes. RN1908FE(TE85L,F) is RoHS Compliant. PEMD16,115 is ROHS3 Compliant. Both parts meet RoHS requirements and are suitable for applications with RoHS compliance mandates.