RN1907,LF(CT Pre-Biased Dual NPN Transistor Equivalent & Substitute Parts

Part Overview

The RN1907,LF(CT is a pre-biased dual NPN bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount component operates at 50V maximum collector-emitter breakdown voltage with a maximum collector current of 100mA and 200mW power dissipation. The device features integrated base and emitter-base resistors (10kOhms and 47kOhms respectively) and operates at 250MHz transition frequency. The part is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1) and maintains active product status. Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and functional characteristics to support design flexibility and supply chain continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 NPN - Pre-Biased (Dual)	—
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	47	kOhms
DC Current Gain (hFE) Min @ Ic, Vce	80 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA	—
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	250	MHz
Power - Max	200	mW
Package / Case	6-TSSOP, SC-88, SOT-363	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the RN1907,LF(CT are classified based on strict electrical and mechanical parameter matching. The primary substitution criteria are:

Critical Matching Parameters:

Transistor configuration: 2 NPN - Pre-Biased (Dual)
Maximum collector current: 100mA
Maximum collector-emitter breakdown voltage: 50V
Base resistor (R1): 10kOhms
Emitter-base resistor (R2): 47kOhms
Transition frequency: 250MHz
Package compatibility: 6-TSSOP, SC-88, SOT-363 surface mount

Direct Substitutes maintain all critical electrical parameters and identical transistor configuration (2 NPN pre-biased dual).

Similar Substitutes share the same electrical ratings and package family but may differ in transistor configuration (1 NPN/1 PNP versus 2 NPN), power rating, or resistor values. These parts are suitable only when circuit topology accommodates the configuration difference.

Parameter Comparison

Parameter	RN1907,LF(CT	MUN5214DW1T1G	UMH9NTN	DDC114YU-7-F	PUMH9,115
Manufacturer	Toshiba	onsemi	Rohm	Diodes Inc.	Nexperia
Transistor Type	2 NPN - Pre-Biased	2 NPN - Pre-Biased	2 NPN - Pre-Biased	2 NPN - Pre-Biased	2 NPN - Pre-Biased
Ic (Max)	100mA	100mA	100mA	100mA	100mA
Vce Breakdown (Max)	50V	50V	50V	50V	50V
R1 (Base)	10kOhms	10kOhms	10kOhms	10kOhms	10kOhms
R2 (Emitter-Base)	47kOhms	47kOhms	47kOhms	47kOhms	47kOhms
hFE (Min) @ Ic, Vce	80 @ 10mA, 5V	80 @ 5mA, 10V	68 @ 5mA, 5V	68 @ 10mA, 5V	100 @ 5mA, 5V
Vce Saturation (Max)	300mV @ 250µA, 5mA	250mV @ 300µA, 10mA	300mV @ 250µA, 5mA	300mV @ 250µA, 5mA	100mV @ 250µA, 5mA
Ic Cutoff (Max)	500nA	500nA	500nA	500nA	1µA
Frequency - Transition	250MHz	—	250MHz	250MHz	—
Power (Max)	200mW	250mW	150mW	200mW	300mW
Package	US6 (SOT-363)	SC-88/SC70-6/SOT-363	UMT6 (SOT-363)	SOT-363	6-TSSOP (SOT-363)
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Direct Substitutes (Highest Compatibility):

The MUN5214DW1T1G (onsemi), UMH9NTN (Rohm Semiconductor), and DDC114YU-7-F (Diodes Incorporated) are direct substitutes for the RN1907,LF(CT. All three maintain the 2 NPN pre-biased dual transistor configuration with identical maximum ratings (100mA collector current, 50V breakdown voltage) and matching integrated resistor values (10kOhms base, 47kOhms emitter-base). These parts are ROHS3 compliant with MSL 1 rating and active product status.

The MUN5214DW1T1G offers increased power dissipation (250mW versus 200mW) and is suitable for applications requiring higher thermal headroom. The UMH9NTN provides the lowest power rating (150mW) and is appropriate for power-constrained designs. The DDC114YU-7-F matches the original 200mW power specification exactly.

Similar Substitutes (Configuration Differences):

The PUMH9,115 (Nexperia) is a 2 NPN pre-biased dual transistor with identical electrical ratings but offers superior saturation characteristics (100mV versus 300mV at specified conditions) and higher power dissipation (300mW). This part is suitable for applications where lower saturation voltage improves switching performance.

The ACX114YUQ-7R and ACX114YUQ-13R (Diodes Incorporated) feature 1 NPN/1 PNP pre-biased configuration rather than 2 NPN. These parts are automotive-grade (AEC-Q101 qualified) and suitable only for circuits designed to accommodate mixed polarity transistor pairs.

All substitute parts maintain ROHS3 compliance and unlimited moisture sensitivity level, ensuring compatibility with standard manufacturing and storage requirements.

Frequently Asked Questions (FAQ)

Q: Can the MUN5214DW1T1G directly replace the RN1907,LF(CT in all applications?

A: The MUN5214DW1T1G is a direct substitute with matching transistor configuration (2 NPN pre-biased), identical maximum ratings (100mA, 50V), and matching integrated resistor values. The higher power rating (250mW versus 200mW) provides additional thermal margin. Pin-to-pin compatibility is maintained within the SOT-363 package family.

Q: What is the difference between the UMH9NTN and the original RN1907,LF(CT?

A: The UMH9NTN maintains all critical electrical specifications and transistor configuration. The primary difference is lower maximum power dissipation (150mW versus 200mW), making it suitable for applications with lower power requirements. Transition frequency remains at 250MHz. The part is supplied in UMT6 package designation but is mechanically compatible with SOT-363 footprints.

Q: Why do the ACX114YUQ-7R and ACX114YUQ-13R have different transistor configurations?

A: The ACX114 series features 1 NPN and 1 PNP transistor pair in a single package, whereas the RN1907,LF(CT contains 2 NPN transistors. These parts are suitable only for circuits designed to use complementary transistor pairs. Automotive-grade qualification (AEC-Q101) makes them appropriate for automotive applications.

Q: Are all substitute parts ROHS3 compliant?

A: All listed substitute parts maintain ROHS3 compliance and unlimited moisture sensitivity level (MSL 1), matching the original RN1907,LF(CT specifications.

Q: What package considerations apply when selecting substitutes?

A: All substitute parts use the 6-TSSOP/SC-88/SOT-363 package family with identical pin configurations. Physical footprints are compatible across all listed alternatives. Supplier device package designations (US6, SC-88/SC70-6/SOT-363, UMT6) refer to the same mechanical package.

Q: Which substitute offers the best saturation performance?

A: The PUMH9,115 provides the lowest saturation voltage (100mV at 250µA base current, 5mA collector current) compared to the original 300mV specification, resulting in improved switching efficiency in saturation-mode applications.

Q: Can the DDC114YU-7-F be used as a pin-for-pin replacement?

A: The DDC114YU-7-F is a direct substitute with identical electrical specifications, matching 200mW power rating, and compatible SOT-363 package. Pin-to-pin replacement is supported without circuit modifications.

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