RN1904FE,LF(CT Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The RN1904FE,LF(CT is a pre-biased dual NPN bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount component operates at 50V maximum collector-emitter breakdown voltage with 100mA maximum collector current and 250MHz transition frequency. The device is housed in an ES6 package (SOT-563/SOT-666 equivalent) and is ROHS3 compliant with unlimited moisture sensitivity rating.

The RN1904FE,LF(CT maintains active product status with 4258 pieces currently in stock. Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and regulatory compliance. Substitutes are necessary when primary inventory is unavailable, when design requirements permit alternative manufacturers, or when enhanced performance characteristics are beneficial.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 NPN - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	47	kOhms
Resistor - Emitter Base (R2)	47	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300	mV
Current - Collector Cutoff (Max)	100	nA
Frequency - Transition	250	MHz
Power - Max	100	mW
Mounting Type	Surface Mount	—
Package / Case	SOT-563, SOT-666	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution eligibility for the RN1904FE,LF(CT is determined by the following critical parameters:

Mandatory Matching Parameters:

Transistor configuration: 2 NPN pre-biased dual or compatible configuration
Maximum collector current: 100mA
Maximum collector-emitter breakdown voltage: 50V
Base resistor (R1): 47kOhms
Emitter-base resistor (R2): 47kOhms
Transition frequency: 250MHz minimum
Surface mount package: SOT-563 or SOT-666
RoHS3 compliance
Moisture sensitivity level: 1 (Unlimited)

Acceptable Variation Parameters:

DC current gain (hFE): Minimum 68 acceptable (main part specifies 80 minimum)
Vce saturation: Up to 300mV acceptable
Current collector cutoff: Up to 500nA acceptable
Power dissipation: 100mW minimum (higher ratings acceptable)
Manufacturer: Diodes Incorporated, Rohm Semiconductor, onsemi, Nexperia USA Inc.

Substitutes with different transistor configurations (1 NPN + 1 PNP versus 2 NPN) are included when all other electrical parameters align, as package pinout compatibility permits direct substitution in most applications.

Parameter Comparison

Parameter	RN1904FE,LF(CT	EMH2T2R	DCX144EH-7	NSBC144EDXV6T1G	PEMH2,115	PEMD12,315
Manufacturer	Toshiba	Rohm	Diodes Inc.	onsemi	Nexperia	Nexperia
Transistor Type	2 NPN	2 NPN	1 NPN, 1 PNP	2 NPN	2 NPN	1 NPN, 1 PNP
Ic (Max) [mA]	100	100	100	100	100	100
Vce Breakdown (Max) [V]	50	50	50	50	50	50
R1 [kOhms]	47	47	47	47	47	47
R2 [kOhms]	47	47	47	47	47	47
hFE (Min) @ Ic, Vce	80 @ 10mA, 5V	68 @ 5mA, 5V	68 @ 5mA, 5V	80 @ 5mA, 10V	80 @ 5mA, 5V	80 @ 5mA, 5V
Vce Saturation (Max) [mV]	300	300	300	250	150	150
Icbo (Max) [nA]	100	500	500	500	1000	1000
Frequency - Transition [MHz]	250	250	250	—	—	—
Power - Max [mW]	100	150	150	500	300	300
Package	ES6 (SOT-563)	EMT6 (SOT-563)	SOT-563	SOT-563	SOT-666	SOT-666
Product Status	Active	Active	Active	Active	Not For New Designs	Not For New Designs
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

EMH2T2R (Rohm Semiconductor) is the preferred substitute for the RN1904FE,LF(CT. This part maintains identical transistor configuration (2 NPN pre-biased dual), matching all critical electrical parameters including collector current, breakdown voltage, and base/emitter resistor values. The EMH2T2R offers enhanced power dissipation (150mW versus 100mW) and is actively manufactured with high inventory availability (77100 pieces). Both parts are ROHS3 compliant with unlimited moisture sensitivity rating.

DCX144EH-7 (Diodes Incorporated) provides an alternative with 1 NPN + 1 PNP configuration. While transistor type differs, electrical specifications align with the RN1904FE,LF(CT across all critical parameters. This part is actively produced with substantial inventory (30400 pieces) and offers equivalent performance in applications where mixed transistor configuration is acceptable.

NSBC144EDXV6T1G (onsemi) is an active product offering 2 NPN configuration matching the main part. This device provides superior power handling (500mW) and improved saturation characteristics (250mV maximum). Transition frequency specification is not provided for this part; applications requiring 250MHz operation should confirm compatibility with onsemi technical documentation.

Secondary Substitutes (Legacy Product Status):

PEMH2,115 and PEMD12,315 (Nexperia USA Inc.) are designated "Not For New Designs" and carry legacy product status. These parts maintain full electrical compatibility with the RN1904FE,LF(CT but should be used only for replacement or maintenance of existing designs. Both offer improved saturation characteristics (150mV maximum) and higher power dissipation (300mW).

Package Considerations:

The RN1904FE,LF(CT is supplied in ES6 package (SOT-563 equivalent). Substitutes EMH2T2R and DCX144EH-7 use equivalent SOT-563 packages and are directly interchangeable. PEMH2,115 and PEMD12,315 use SOT-666 packages; physical board layout verification is required before substitution, though electrical compatibility is maintained.

Frequently Asked Questions (FAQ)

Q: Can EMH2T2R directly replace RN1904FE,LF(CT in production?

A: Yes. EMH2T2R meets all mandatory electrical parameters: 2 NPN pre-biased configuration, 100mA maximum collector current, 50V breakdown voltage, 47kOhm base and emitter-base resistors, 250MHz transition frequency, and SOT-563 package compatibility. Both parts are ROHS3 compliant with unlimited moisture sensitivity. The EMH2T2R offers higher power dissipation (150mW), which provides additional design margin.

Q: What is the difference between 2 NPN and 1 NPN + 1 PNP configurations?

A: The RN1904FE,LF(CT contains two independent NPN transistors on a single die with integrated base and emitter-base resistors. DCX144EH-7 contains one NPN and one PNP transistor with identical resistor values and electrical specifications. Direct substitution is possible when circuit design uses only the NPN portion or when the PNP transistor is not utilized. Verify schematic requirements before substitution.

Q: Are PEMH2,115 and PEMD12,315 suitable for new designs?

A: No. Both parts carry "Not For New Designs" product status from Nexperia. These parts are suitable only for replacement of existing assemblies or maintenance of fielded products. For new designs, select from active products: EMH2T2R, DCX144EH-7, or NSBC144EDXV6T1G.

Q: What is the significance of the different Vce saturation values?

A: Vce saturation represents the minimum voltage across the transistor when fully saturated. The RN1904FE,LF(CT specifies 300mV maximum saturation. NSBC144EDXV6T1G offers 250mV maximum, providing lower on-state voltage drop and reduced power dissipation. PEMH2,115 and PEMD12,315 offer 150mV maximum saturation, providing superior switching performance. Lower saturation voltage is beneficial in power-limited applications but does not prevent substitution.

Q: Can NSBC144EDXV6T1G be used if transition frequency is not specified?

A: NSBC144EDXV6T1G does not provide transition frequency specification in available documentation. The RN1904FE,LF(CT specifies 250MHz. Applications requiring confirmed 250MHz operation should use EMH2T2R or DCX144EH-7, which explicitly specify 250MHz transition frequency. Contact onsemi technical support for NSBC144EDXV6T1G frequency specifications if high-frequency operation is critical.

Q: What is the difference between ES6 and EMT6 packages?

A: ES6 (Toshiba designation) and EMT6 (Rohm designation) are equivalent to SOT-563 industry standard package. Both provide identical pinout, footprint, and mechanical dimensions. Direct board-level substitution is possible without layout modification.

Q: Are all substitutes ROHS3 compliant?

A: Yes. All listed substitutes (EMH2T2R, DCX144EH-7, NSBC144EDXV6T1G, PEMH2,115, PEMD12,315) are ROHS3 compliant. All parts maintain unlimited moisture sensitivity level (MSL 1), eliminating bake-out requirements for storage and handling.

Q: What inventory considerations apply to substitution?

A: RN1904FE,LF(CT has 4258 pieces in stock. EMH2T2R offers highest availability (77100 pieces), followed by DCX144EH-7 (30400 pieces). NSBC144EDXV6T1G provides 8100 pieces. PEMH2,115 and PEMD12,315 offer lower availability (4928 and 8702 pieces respectively) and legacy status. For supply chain continuity, EMH2T2R is recommended as primary substitute.

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