RN1902,LF(CT Pre-Biased Dual NPN Transistor Equivalent & Substitute Parts

Part Overview

The RN1902,LF(CT is a pre-biased dual NPN transistor manufactured by Toshiba Semiconductor and Storage, designed for surface mount applications in the 6-TSSOP (SC-88, SOT-363) package. This active product operates at 50V maximum collector-emitter breakdown voltage with 100mA maximum collector current and 200mW power dissipation. The integrated base and emitter-base resistors (10kOhms each) provide simplified circuit design for switching and amplification applications.

Substitute parts are necessary when the primary part experiences supply constraints, extended lead times, or when design flexibility across multiple manufacturers is required. All substitute parts listed maintain electrical and mechanical compatibility within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 NPN - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	10	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300	mV
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	250	MHz
Power - Max	200	mW
Mounting Type	Surface Mount	—
Package / Case	6-TSSOP, SC-88, SOT-363	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—
REACH Status	REACH Unaffected	—

Substitute Part Grouping Explanation

Substitution eligibility for the RN1902,LF(CT is determined by the following critical parameters:

Mandatory Matching Parameters:

Maximum collector current: 100mA
Maximum collector-emitter breakdown voltage: 50V
Base resistor value: 10kOhms
Emitter-base resistor value: 10kOhms
Surface mount package compatibility: 6-TSSOP, SC-88, SOT-363
RoHS3 compliance
MSL rating: 1 (Unlimited)
REACH unaffected status

Acceptable Variation Parameters:

DC current gain (hFE) minimum: 30 to 50 @ specified test conditions
Vce saturation: 150mV to 300mV (lower saturation voltage acceptable)
Collector cutoff current: 500nA to 1µA (lower leakage acceptable)
Power dissipation: 200mW to 300mW (higher rating acceptable)
Transition frequency: 250MHz or unspecified (higher frequency acceptable)
Transistor configuration: 2 NPN or 1 NPN + 1 PNP (dual configuration required)

Substitute parts from Nexperia USA Inc., Diodes Incorporated, and other manufacturers meeting these criteria are electrically and mechanically interchangeable with the RN1902,LF(CT.

Parameter Comparison

Parameter	RN1902,LF(CT	DCX114EU-7-F	PUMD3,115	PUMD3,125	PUMD3,135	PUMD3,165	PUMH11,115	PUMH11F
Manufacturer	Toshiba	Diodes Inc.	Nexperia	Nexperia	Nexperia	Nexperia	Nexperia	Nexperia
Transistor Type	2 NPN	1 NPN, 1 PNP	1 NPN, 1 PNP	1 NPN, 1 PNP	1 NPN, 1 PNP	1 NPN, 1 PNP	2 NPN	2 NPN
Ic (Max) [mA]	100	100	100	100	100	100	100	100
Vce Breakdown (Max) [V]	50	50	50	50	50	50	50	50
R1 (Base) [kOhms]	10	10	10	10	10	10	10	10
R2 (Emitter-Base) [kOhms]	10	10	10	10	10	10	10	10
hFE (Min) @ Ic, Vce	50 @ 10mA, 5V	30 @ 5mA, 5V	30 @ 5mA, 5V	30 @ 5mA, 5V	30 @ 5mA, 5V	30 @ 5mA, 5V	30 @ 5mA, 5V	30 @ 5mA, 5V
Vce Saturation (Max) [mV]	300	300	150	150	150	150	150	150
Ic Cutoff (Max) [nA]	500	500	1000	1000	1000	1000	1000	1000
Frequency - Transition [MHz]	250	250	—	—	—	—	—	—
Power - Max [mW]	200	200	300	300	300	300	300	300
Package	6-TSSOP	SOT-363	6-TSSOP	6-TSSOP	6-TSSOP	6-TSSOP	6-TSSOP	6-TSSOP
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
MSL	1	1	1	1	1	1	1	1
REACH Status	Unaffected	Unaffected	Unaffected	Unaffected	Unaffected	Unaffected	Unaffected	Unaffected

Engineering Selection Recommendations

All listed substitute parts maintain active product status and full compliance with ROHS3 and REACH requirements. Selection among equivalent parts should be based on the following factors:

Dual NPN Configuration (Exact Type Match): The PUMH11,115 and PUMH11F parts from Nexperia provide identical 2 NPN pre-biased transistor configuration to the RN1902,LF(CT. These parts are direct functional equivalents with improved saturation voltage performance (150mV vs. 300mV) and higher power rating (300mW vs. 200mW). Both maintain the same 10kOhms base and emitter-base resistor values and 50V/100mA electrical ratings.

Dual Configuration with Mixed Polarity (NPN + PNP): The PUMD3 series (PUMD3,115, PUMD3,125, PUMD3,135, PUMD3,165) and DCX114EU-7-F from Diodes Incorporated provide 1 NPN + 1 PNP pre-biased transistor configuration. These parts are functionally compatible when circuit design accommodates complementary transistor pairs. All maintain identical voltage, current, and resistor specifications with improved saturation voltage and power rating characteristics.

Packaging Considerations: The DCX114EU-7-F uses SOT-363 package designation, which is mechanically equivalent to the 6-TSSOP package used by other substitutes. All parts are surface mount compatible with identical pin configurations within the 6-pin package family.

Inventory and Availability: Nexperia parts demonstrate higher inventory levels across multiple variants, with PUMD3,165 showing 158,277 units in stock. Diodes Incorporated DCX114EU-7-F maintains 35,300 units. Toshiba RN1902,LF(CT has 3,820 units available.

Frequently Asked Questions (FAQ)

Q: Can PUMD3 series parts (1 NPN + 1 PNP) directly replace the RN1902,LF(CT (2 NPN)?

A: PUMD3 series parts are electrically compatible substitutes when circuit design accommodates the complementary transistor configuration. The NPN transistor within the PUMD3 package maintains identical electrical specifications (50V, 100mA, 10kOhms base resistor, 10kOhms emitter-base resistor). The additional PNP transistor does not interfere with NPN-only applications. Pin-to-pin compatibility exists within the 6-TSSOP package family.

Q: What is the difference between PUMD3,115, PUMD3,125, PUMD3,135, and PUMD3,165?

A: These four Nexperia variants are electrically identical. The suffix designations (115, 125, 135, 165) indicate different packaging or tape reel configurations. All four parts share identical electrical parameters: 50V breakdown voltage, 100mA collector current, 10kOhms resistors, 150mV saturation voltage, and 300mW power rating. Selection among these variants depends on packaging format requirements (Cut Tape vs. Tape & Reel).

Q: Does the improved saturation voltage (150mV vs. 300mV) in substitute parts affect circuit operation?

A: Lower saturation voltage in substitute parts (PUMD3 series, PUMH11 series, DCX114EU-7-F) represents improved performance. Saturation voltage is the minimum voltage drop across the transistor in fully saturated switching mode. Lower saturation voltage reduces power dissipation and heat generation, benefiting circuit efficiency. This change is backward compatible with designs specified for 300mV saturation.

Q: Are all substitute parts RoHS3 compliant and REACH unaffected?

A: All listed substitute parts maintain ROHS3 compliance and REACH unaffected status, identical to the RN1902,LF(CT. Moisture sensitivity level (MSL) rating is 1 (Unlimited) for all parts, indicating no special moisture handling requirements during storage or assembly.

Q: What is the significance of the 250MHz transition frequency specification?

A: The 250MHz transition frequency (fT) indicates the maximum frequency at which the transistor maintains useful current gain. The RN1902,LF(CT and DCX114EU-7-F both specify 250MHz. Nexperia PUMD3 and PUMH11 series do not specify transition frequency in the provided data, indicating this parameter is not limiting for these applications. All parts are suitable for switching and amplification up to and beyond 250MHz in typical circuit configurations.

Q: Can the DCX114EU-7-F from Diodes Incorporated be used as a direct replacement?

A: The DCX114EU-7-F is a functional substitute with one key difference: it contains 1 NPN + 1 PNP transistor pair versus the 2 NPN configuration of the RN1902,LF(CT. Electrical specifications for the NPN transistor are identical (50V, 100mA, 10kOhms resistors). The SOT-363 package is mechanically equivalent to 6-TSSOP. Direct replacement is possible when circuit design does not require dual NPN configuration.

Q: What packaging format differences exist among substitute parts?

A: The RN1902,LF(CT is supplied in Tape & Reel (TR) format. Nexperia PUMD3,115 is available in Cut Tape (CT) & Digi-Reel format, while PUMD3,125, PUMD3,135, PUMD3,165, PUMH11,115, and PUMH11F are supplied in Tape & Reel format. Diodes Incorporated DCX114EU-7-F is supplied in Tape & Reel format. All parts use identical 6-TSSOP/SOT-363 surface mount package with the same pin configuration and footprint.

Q: Are there any electrical performance differences that would affect high-frequency switching applications?

A: The RN1902,LF(CT specifies 250MHz transition frequency. Nexperia PUMD3 and PUMH11 series do not specify transition frequency, but all parts are rated for 100mA collector current and 50V breakdown voltage with identical resistor networks. For applications requiring guaranteed 250MHz performance, the RN1902,LF(CT or DCX114EU-7-F are specified options. Nexperia parts are suitable for standard switching applications where transition frequency is not explicitly specified as a design requirement.

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