RN1902FE,LF(CT Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The RN1902FE,LF(CT is a pre-biased dual NPN bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount component operates at 50V maximum collector-emitter breakdown voltage with a maximum collector current of 100mA and 100mW power dissipation. The device is designed for applications requiring integrated base bias resistors, eliminating the need for external biasing networks in compact circuit designs.

The RN1902FE,LF(CT maintains Active product status with ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1). Substitute parts are necessary when addressing supply chain constraints, inventory availability, or when design specifications permit operation within the electrical and mechanical parameters of alternative manufacturers' offerings.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 NPN - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	1	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300	mV
Frequency - Transition	250	MHz
Power - Max	100	mW
Mounting Type	Surface Mount	—
Package / Case	SOT-563, SOT-666	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the RN1902FE,LF(CT is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

Transistor Type: 2 NPN - Pre-Biased (Dual) configuration
Maximum Collector Current (Ic): 100mA minimum
Maximum Collector-Emitter Breakdown Voltage (Vce(BR)CEO): 50V minimum
Base Resistor (R1): 10kOhms (fixed requirement)
Transition Frequency: 250MHz minimum
Mounting Type: Surface Mount
Package Compatibility: SOT-563 or SOT-666

Secondary Compatibility Parameters:

Power dissipation rating (100mW minimum)
Saturation voltage characteristics
Collector cutoff current specifications
RoHS3 compliance and MSL rating

Substitute parts must satisfy all primary criteria. Variations in emitter-base resistor (R2) values, DC current gain (hFE), and power ratings above the minimum threshold do not preclude substitution when the primary electrical and mechanical parameters align.

Parameter Comparison

Parameter	RN1902FE,LF(CT (Toshiba)	DDC114YH-7 (Diodes Inc.)	EMH11T2R (Rohm)	NSVBC114EDXV6T1G (onsemi)	PEMD3,315 (Nexperia)
Transistor Type	2 NPN - Pre-Biased (Dual)	2 NPN - Pre-Biased (Dual)	2 NPN - Pre-Biased (Dual)	2 NPN - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100 mA	100 mA	100 mA	100 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	50 V	50 V
Resistor - Base (R1)	10 kOhms	10 kOhms	10 kOhms	10 kOhms	10 kOhms
Resistor - Emitter Base (R2)	1 kOhms	47 kOhms	10 kOhms	10 kOhms	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V	68 @ 10mA, 5V	30 @ 5mA, 5V	35 @ 5mA, 10V	30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300 mV @ 250µA, 5mA	300 mV @ 250µA, 5mA	300 mV @ 500µA, 10mA	250 mV @ 300µA, 10mA	150 mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	100 nA	500 nA	500 nA	500 nA	1 µA
Frequency - Transition	250 MHz	250 MHz	250 MHz	—	—
Power - Max	100 mW	150 mW	150 mW	500 mW	300 mW
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666
Product Status	Active	Active	Active	Active	Not For New Designs
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Substitutes (Recommended for New Designs):

DDC114YH-7 (Diodes Incorporated) and EMH11T2R (Rohm Semiconductor) are the preferred substitutes for the RN1902FE,LF(CT. Both devices maintain Active product status, satisfy all primary substitution criteria, and provide enhanced power dissipation ratings (150mW) compared to the original specification. DDC114YH-7 offers higher DC current gain (68 vs. 30), while EMH11T2R maintains identical gain characteristics with matching emitter-base resistor values (10kOhms). Both are ROHS3 compliant with MSL 1 rating and support SOT-563 and SOT-666 packaging.

NSVBC114EDXV6T1G (onsemi) qualifies as a functional substitute with superior power handling capability (500mW) and improved saturation voltage characteristics (250mV). This device supports both SOT-563 and SOT-666 packages and maintains full ROHS3 compliance. The absence of specified transition frequency does not disqualify this part for applications where 250MHz operation is not explicitly required.

Secondary Substitute (Legacy Status):

PEMD3,315 (Nexperia USA Inc.) is classified as "Not For New Designs" and carries a different transistor configuration (1 NPN, 1 PNP pre-biased dual) compared to the 2 NPN configuration of the RN1902FE,LF(CT. This part does not qualify as a direct substitute and should not be selected for new circuit implementations.

Selection Criteria Summary:

For supply chain continuity: DDC114YH-7 or EMH11T2R
For enhanced thermal performance: NSVBC114EDXV6T1G
For legacy system maintenance only: PEMD3,315 (not recommended for new designs)

Frequently Asked Questions (FAQ)

Q: Can DDC114YH-7 replace RN1902FE,LF(CT in existing designs?

A: Yes. DDC114YH-7 meets all primary substitution criteria: 2 NPN pre-biased dual configuration, 100mA maximum collector current, 50V breakdown voltage, 10kOhms base resistor, and 250MHz transition frequency. The higher DC current gain (68 vs. 30) and increased power rating (150mW vs. 100mW) provide operational margin. Both devices support SOT-563 and SOT-666 packaging and maintain ROHS3 compliance.

Q: What is the significance of the R2 (emitter-base resistor) difference between RN1902FE,LF(CT (1kOhms) and DDC114YH-7 (47kOhms)?

A: The R2 resistor value affects the bias network characteristics and switching speed. DDC114YH-7's 47kOhms value results in different bias current distribution compared to the 1kOhms specification of RN1902FE,LF(CT. This difference requires circuit-level evaluation to confirm compatibility with specific application requirements. EMH11T2R and NSVBC114EDXV6T1G both specify 10kOhms R2, providing closer alignment to the original design intent.

Q: Is PEMD3,315 a suitable replacement for RN1902FE,LF(CT?

A: No. PEMD3,315 features a 1 NPN, 1 PNP pre-biased dual configuration, which differs fundamentally from the 2 NPN configuration of RN1902FE,LF(CT. Additionally, PEMD3,315 carries "Not For New Designs" status. This part does not qualify as a direct substitute.

Q: What are the package compatibility considerations?

A: RN1902FE,LF(CT supports both SOT-563 and SOT-666 package options. All listed substitute parts (DDC114YH-7, EMH11T2R, NSVBC114EDXV6T1G, and PEMD3,315) support both package variants. Verify the specific package designation required for your application before component selection, as SOT-563 and SOT-666 have different pin configurations and footprints.

Q: Does the higher power rating of NSVBC114EDXV6T1G (500mW vs. 100mW) affect circuit compatibility?

A: No. Higher power rating indicates greater thermal capability and does not negatively impact circuit operation. NSVBC114EDXV6T1G can be substituted in applications designed for 100mW operation. The enhanced power handling provides additional design margin for thermal management.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts (DDC114YH-7, EMH11T2R, NSVBC114EDXV6T1G, and PEMD3,315) maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the environmental and regulatory specifications of RN1902FE,LF(CT.

Q: What is the impact of transition frequency specification on substitution?

A: RN1902FE,LF(CT specifies 250MHz transition frequency. DDC114YH-7 and EMH11T2R both meet this specification. NSVBC114EDXV6T1G and PEMD3,315 do not provide transition frequency data. For applications requiring confirmed 250MHz operation, DDC114YH-7 or EMH11T2R are the appropriate selections.

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