RN1406S,LF(D Equivalent & Substitute Parts

Part Overview

The RN1406S,LF(D is a pre-biased NPN bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and is housed in a TO-236-3 (SOT-23-3) package. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives from active product lines. Substitute parts maintain identical electrical specifications and mechanical compatibility while offering continued availability and supply chain reliability.

Substiute Parts

RN1406S,LF(D
Toshiba Semiconductor and StorageIn Stock: 1011RN1406S,LF(D Datasheet
RN1406S,LF(D
Current Part
RN1406,LF
Toshiba Semiconductor and StorageIn Stock: 110128RN1406,LF Datasheet
RN1406,LF
Direct
DDTC143ZCA-7-F
Diodes IncorporatedIn Stock: 35465DDTC143ZCA-7-F Datasheet
DDTC143ZCA-7-F
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DTC143ZCA-TP
Micro Commercial CoIn Stock: 5336DTC143ZCA-TP Datasheet
DTC143ZCA-TP
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DTC143ZKAT146
Rohm SemiconductorIn Stock: 938491DTC143ZKAT146 Datasheet
DTC143ZKAT146
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MMUN2233LT1G
onsemiIn Stock: 460641MMUN2233LT1G Datasheet
MMUN2233LT1G
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MUN2233T1G
onsemiIn Stock: 100254MUN2233T1G Datasheet
MUN2233T1G
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NSVMUN2233T1G
onsemiIn Stock: 1057NSVMUN2233T1G Datasheet
NSVMUN2233T1G
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PDTC143ZT,215
Nexperia USA Inc.In Stock: 90493PDTC143ZT,215 Datasheet
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PDTC143ZT,235
Nexperia USA Inc.In Stock: 189242PDTC143ZT,235 Datasheet
PDTC143ZT,235
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SMMUN2233LT1G
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Key Parameters

Parameter Value Unit
Transistor Type NPN - Pre-Biased
Collector Current (Ic) Maximum 100 mA
Collector-Emitter Breakdown Voltage (Vceo) 50 V
Base Resistor (R1) 4.7 kOhms
Emitter-Base Resistor (R2) 47 kOhms
DC Current Gain (hFE) Minimum 80
Vce Saturation Maximum 300 mV
Collector Cutoff Current (Icbo) Maximum 500 nA
Power Dissipation Maximum 200 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the RN1406S,LF(D is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

  • Transistor type: NPN pre-biased configuration
  • Collector current rating: 100 mA maximum
  • Collector-emitter breakdown voltage: 50 V
  • Base resistor (R1): 4.7 kOhms
  • Emitter-base resistor (R2): 47 kOhms
  • DC current gain (hFE): minimum 80
  • Collector cutoff current: 500 nA maximum
  • Power dissipation: 200 mW or greater

Mechanical Equivalence Criteria:

  • Surface mount technology
  • Package compatibility: TO-236-3, SC-59, or SOT-23-3 footprint
  • Moisture sensitivity level: MSL 1 (Unlimited)

Substitute parts are classified as either direct equivalents (identical part number variants from the same manufacturer) or functionally equivalent alternatives (different manufacturers with identical electrical and mechanical specifications). All listed substitutes maintain active product status and comply with RoHS3 requirements.

Parameter Comparison

Part Number Manufacturer Product Status Ic (Max) mA Vceo (Max) V R1 kOhms R2 kOhms hFE (Min) Vce Sat (Max) mV Icbo (Max) nA Power (Max) mW Package RoHS3
RN1406S,LF(D Toshiba Obsolete 100 50 4.7 47 80 300 500 200 SOT-23-3
RN1406,LF Toshiba Active 100 50 4.7 47 80 300 500 200 SOT-23-3 Yes
DDTC143ZCA-7-F Diodes Incorporated Active 100 50 4.7 47 80 300 500 200 SOT-23-3 Yes
DTC143ZCA-TP Micro Commercial Co Active 100 50 4.7 47 80 300 500 200 SOT-23-3 Yes
DTC143ZKAT146 Rohm Semiconductor Active 100 50 4.7 47 80 300 500 200 SOT-23-3 Yes
MMUN2233LT1G onsemi Active 100 50 4.7 47 80 250 500 246 SOT-23-3 Yes
MUN2233T1G onsemi Active 100 50 4.7 47 80 250 500 230 SC-59 Yes
NSVMUN2233T1G onsemi Active 100 50 4.7 47 80 250 500 230 SC-59 Yes
PDTC143ZT,215 Nexperia USA Inc. Active 100 50 4.7 47 100 100 1000 250 TO-236AB Yes
PDTC143ZT,235 Nexperia USA Inc. Active 100 50 4.7 47 100 100 1000 250 TO-236AB Yes
SMMUN2233LT1G onsemi Active 100 50 4.7 47 80 250 500 246 SOT-23-3 Yes

Engineering Selection Recommendations

Direct Equivalent (Preferred for Pin-for-Pin Replacement):

RN1406,LF from Toshiba Semiconductor and Storage is the direct active equivalent of the obsolete RN1406S,LF(D. This part maintains identical electrical specifications and package configuration while offering active product status and RoHS3 compliance. Selection of this part eliminates any design modification requirements.

Functionally Equivalent Alternatives:

The following parts satisfy all electrical and mechanical substitution criteria and are suitable for direct PCB replacement:

  • DDTC143ZCA-7-F (Diodes Incorporated): Maintains all core electrical parameters with identical package footprint. Active status with RoHS3 compliance.
  • DTC143ZCA-TP (Micro Commercial Co): Functionally equivalent with active product status and RoHS3 compliance.
  • DTC143ZKAT146 (Rohm Semiconductor): Functionally equivalent with active product status and RoHS3 compliance.

Enhanced Performance Alternatives:

The following parts exceed the minimum electrical specifications of the RN1406S,LF(D while maintaining compatibility:

  • MMUN2233LT1G (onsemi): Provides improved saturation voltage (250 mV vs. 300 mV) and increased power dissipation (246 mW vs. 200 mW). Active status with RoHS3 compliance.
  • SMMUN2233LT1G (onsemi): Functionally identical to MMUN2233LT1G with active product status and RoHS3 compliance.
  • PDTC143ZT,215 and PDTC143ZT,235 (Nexperia USA Inc.): Provide enhanced DC current gain (100 vs. 80), improved saturation voltage (100 mV vs. 300 mV), and increased power dissipation (250 mW vs. 200 mW). Both parts carry AEC-Q100 automotive qualification and RoHS3 compliance.

Package-Specific Considerations:

MUN2233T1G and NSVMUN2233T1G (onsemi) utilize SC-59 package variant instead of SOT-23-3. These parts are functionally equivalent but require PCB footprint verification prior to implementation.

All substitute parts maintain MSL 1 (Unlimited) moisture sensitivity classification, ensuring compatibility with standard handling and storage procedures.

Frequently Asked Questions (FAQ)

Q: Can RN1406,LF directly replace RN1406S,LF(D without design modification?

A: Yes. RN1406,LF is the direct active equivalent with identical electrical specifications and package configuration. No design modification is required.

Q: What is the primary difference between the RN1406S,LF(D and its substitutes?

A: The RN1406S,LF(D is classified as obsolete. All listed substitutes are active products with RoHS3 compliance, ensuring continued supply chain availability and regulatory compliance.

Q: Are all substitute parts compatible with the same PCB footprint?

A: Most substitutes utilize SOT-23-3 or TO-236AB packages, which share identical footprints. MUN2233T1G and NSVMUN2233T1G use SC-59 packaging. Verify PCB footprint compatibility before implementation.

Q: What is the significance of the internal resistor values (R1 = 4.7 kOhms, R2 = 47 kOhms)?

A: These internal resistors define the pre-biasing network of the transistor. All listed substitutes maintain identical resistor values, ensuring equivalent switching behavior and circuit performance.

Q: Do the PDTC143ZT,215 and PDTC143ZT,235 parts offer advantages over the base RN1406S,LF(D specification?

A: Yes. These Nexperia parts provide higher DC current gain (100 vs. 80), lower saturation voltage (100 mV vs. 300 mV), and greater power dissipation capability (250 mW vs. 200 mW). Both carry AEC-Q100 automotive qualification.

Q: What does MSL 1 (Unlimited) moisture sensitivity classification mean?

A: MSL 1 indicates the component has unlimited shelf life under standard storage conditions. No special moisture control measures are required during handling or storage.

Q: Can onsemi MMUN2233LT1G and SMMUN2233LT1G be used interchangeably?

A: Yes. Both parts are functionally identical with the same electrical specifications and SOT-23-3 package. Selection between them depends on packaging format availability (Cut Tape vs. Tape & Reel).

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed active substitutes comply with RoHS3 requirements. The original RN1406S,LF(D does not specify RoHS3 status due to its obsolete classification.

Q: What is the difference between TO-236-3, SC-59, and SOT-23-3 package designations?

A: These are equivalent package designations for the same 3-pin surface mount form factor. TO-236-3 is the JEDEC designation, SC-59 is the EIAJ designation, and SOT-23-3 is the IEC designation. All are mechanically and electrically compatible.

Q: Which substitute offers the best overall compatibility for direct replacement?

A: RN1406,LF from Toshiba is the recommended first choice as the direct active equivalent. For alternative sources, DDTC143ZCA-7-F (Diodes Incorporated) and DTC143ZKAT146 (Rohm Semiconductor) provide identical specifications with high inventory availability.

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