RN1402,LF Equivalent & Substitute Parts

Part Overview

The RN1402,LF is a pre-biased NPN bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount component operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and is designed for general-purpose switching and amplification applications. The device features integrated base and emitter-base resistors (10 kOhms each) and operates at a transition frequency of 250 MHz with a maximum power dissipation of 200 mW. The part is currently in active production status with ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1). Equivalent and substitute parts are identified based on matching electrical characteristics and compatible package configurations to support design flexibility and supply chain alternatives.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Pre-Biased	—
Collector-Emitter Breakdown Voltage (Max)	50	V
Collector Current (Max)	100	mA
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	10	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA	—
Current - Collector Cutoff (Max)	500	nA
Frequency - Transition	250	MHz
Power - Max	200	mW
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the RN1402,LF are grouped based on the following substitution criteria:

Primary Substitution Criteria:

Transistor Type: NPN - Pre-Biased
Collector-Emitter Breakdown Voltage: 50 V
Maximum Collector Current: 100 mA
Package Configuration: TO-236-3, SC-59, or SOT-23-3 (surface mount)
Mounting Type: Surface Mount
RoHS Compliance: ROHS3 Compliant
Moisture Sensitivity Level: 1 (Unlimited)

Secondary Matching Parameters:

Transition Frequency: 250 MHz or compatible
Power Dissipation: 200 mW or greater
Collector Cutoff Current: 500 nA or lower

Resistor Configuration Variants: Substitute parts are available with different integrated base and emitter-base resistor values (10 kOhms, 22 kOhms, 47 kOhms, and 100 kOhms). Selection depends on circuit bias requirements and desired DC current gain characteristics. Parts with matching 10 kOhm resistor configurations provide direct electrical equivalence to the RN1402,LF.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce Breakdown (Max) V	R1 / R2 kOhms	hFE (Min) @ Ic, Vce	Vce Sat (Max) mV	Frequency MHz	Power (Max) mW	Package
RN1402,LF	Toshiba	100	50	10 / 10	50 @ 10mA, 5V	300 @ 250µA, 5mA	250	200	S-Mini (SOT-23-3)
DTC114ECA-TP	Micro Commercial Co	100	50	10 / 10	30 @ 5mA, 5V	300 @ 500µA, 10mA	250	200	SOT-23
DDTC114ECA-7-F	Diodes Incorporated	100	50	10 / 10	30 @ 5mA, 5V	300 @ 500µA, 10mA	250	200	SOT-23-3
DDTC115ECA-7-F	Diodes Incorporated	100	50	100 / 100	82 @ 5mA, 5V	300 @ 250µA, 5mA	250	200	SOT-23-3
DDTC124ECA-7-F	Diodes Incorporated	100	50	22 / 22	56 @ 5mA, 5V	300 @ 500µA, 10mA	250	200	SOT-23-3
DDTC144ECA-7-F	Diodes Incorporated	100	50	47 / 47	68 @ 5mA, 5V	300 @ 500µA, 10mA	250	200	SOT-23-3
DTC144ECAT116	Rohm Semiconductor	100	50	47 / 47	68 @ 5mA, 5V	300 @ 500µA, 10mA	250	200	SST3
MMUN2211LT1G	onsemi	100	50	10 / 10	35 @ 5mA, 10V	250 @ 300µA, 10mA	—	246	SOT-23-3 (TO-236)
MMUN2211LT3G	onsemi	100	50	10 / 10	35 @ 5mA, 10V	250 @ 300µA, 10mA	—	246	SOT-23-3 (TO-236)
MUN2211T3G	onsemi	100	50	10 / 10	35 @ 5mA, 10V	250 @ 300µA, 10mA	—	230	SC-59
PDTC114ET,215	Nexperia USA Inc.	100	50	10 / 10	30 @ 5mA, 5V	150 @ 500µA, 10mA	230	250	TO-236AB

Engineering Selection Recommendations

Direct Electrical Equivalents (10 kOhm Resistor Configuration):

Parts DTC114ECA-TP, DDTC114ECA-7-F, MMUN2211LT1G, MMUN2211LT3G, MUN2211T3G, and PDTC114ET,215 share the same 10 kOhm base and emitter-base resistor configuration as the RN1402,LF. These parts are suitable for direct substitution in applications where the circuit bias network is designed around 10 kOhm internal resistor values. All listed parts maintain 50 V collector-emitter breakdown voltage, 100 mA maximum collector current, and surface mount packaging compatibility.

Alternative Resistor Configurations:

DDTC115ECA-7-F (100 kOhm resistors), DDTC124ECA-7-F (22 kOhm resistors), DDTC144ECA-7-F (47 kOhm resistors), and DTC144ECAT116 (47 kOhm resistors) provide different internal bias networks. These parts are suitable for applications requiring modified DC current gain characteristics or different bias point requirements. Selection of alternative resistor configurations requires circuit analysis to confirm compatibility with the intended application.

Compliance and Production Status:

All substitute parts listed are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings, matching the environmental compliance profile of the RN1402,LF. All parts are in active production status. Package variants (SOT-23, SOT-23-3, S-Mini, SST3, SC-59, TO-236AB) are mechanically compatible with standard surface mount assembly processes for TO-236-3 footprints.

Power Dissipation Considerations:

The RN1402,LF is rated at 200 mW maximum power dissipation. MMUN2211LT1G and MMUN2211LT3G are rated at 246 mW, providing additional thermal margin. MUN2211T3G is rated at 230 mW. PDTC114ET,215 is rated at 250 mW. These higher power ratings do not restrict substitution but provide additional design margin in thermally constrained applications.

Frequently Asked Questions (FAQ)

Q: Can DTC114ECA-TP be used as a direct replacement for RN1402,LF?

A: Yes. Both parts feature 10 kOhm base and emitter-base resistor configurations, 50 V collector-emitter breakdown voltage, 100 mA maximum collector current, and compatible SOT-23 / SOT-23-3 surface mount packages. DC current gain specifications differ (30 @ 5mA, 5V for DTC114ECA-TP versus 50 @ 10mA, 5V for RN1402,LF), but both parts operate within the pre-biased NPN transistor category with matching electrical performance envelopes.

Q: What is the difference between DDTC114ECA-7-F and DDTC144ECA-7-F?

A: The primary difference is the integrated resistor configuration. DDTC114ECA-7-F features 10 kOhm base and emitter-base resistors, while DDTC144ECA-7-F features 47 kOhm resistors. This results in different DC current gain characteristics (30 @ 5mA, 5V for DDTC114ECA-7-F versus 68 @ 5mA, 5V for DDTC144ECA-7-F). Both parts share identical voltage and current ratings and are housed in SOT-23-3 packages. Selection depends on the required bias point and DC current gain for the specific application circuit.

Q: Are onsemi MMUN2211 parts compatible with the RN1402,LF?

A: Yes. MMUN2211LT1G, MMUN2211LT3G, and MUN2211T3G all feature 10 kOhm base and emitter-base resistor configurations matching the RN1402,LF. All three parts operate at 50 V collector-emitter breakdown voltage and 100 mA maximum collector current. Package variants differ (SOT-23-3 for MMUN2211LT1G and MMUN2211LT3G; SC-59 for MUN2211T3G), but all are compatible with standard surface mount assembly for TO-236-3 footprints. Power dissipation ratings are 246 mW (MMUN2211 variants) and 230 mW (MUN2211T3G), both exceeding the 200 mW specification of the RN1402,LF.

Q: What does the resistor configuration (R1 / R2) mean in pre-biased transistors?

A: Pre-biased transistors integrate resistor networks directly into the package. R1 is the base resistor connecting the base to the collector, and R2 is the emitter-base resistor. These internal resistors establish the DC bias point without requiring external resistor components. Different resistor values (10 kOhm, 22 kOhm, 47 kOhm, 100 kOhm) produce different DC current gain characteristics and bias conditions. Selection must match the circuit design requirements.

Q: Can I substitute a part with higher power dissipation rating?

A: Yes. Parts with higher power dissipation ratings (such as PDTC114ET,215 at 250 mW compared to RN1402,LF at 200 mW) can be substituted without restriction. Higher power ratings provide additional thermal margin and do not degrade circuit performance. The part will operate within the same electrical specifications while offering improved thermal headroom.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity ratings, matching the environmental compliance profile of the RN1402,LF. All parts are in active production status.

Q: What is the difference between SOT-23, SOT-23-3, S-Mini, and SST3 packages?

A: SOT-23, SOT-23-3, S-Mini, and SST3 are equivalent surface mount package designations for three-terminal transistor devices. All are mechanically compatible with standard TO-236-3 footprints used in surface mount assembly. Package naming conventions vary by manufacturer (Toshiba uses S-Mini, Rohm uses SST3, others use SOT-23 or SOT-23-3), but the physical dimensions and pin configurations are standardized. Parts with different package designations can be used interchangeably on the same PCB footprint.

Q: Which substitute part has the lowest saturation voltage?

A: PDTC114ET,215 features a maximum saturation voltage of 150 mV @ 500µA, 10mA, which is lower than the RN1402,LF specification of 300 mV @ 250µA, 5mA. This lower saturation voltage may provide improved switching performance in applications requiring minimal voltage drop across the transistor in saturation. However, this difference does not restrict substitution and is application-dependent.

Q: Can I use DDTC115ECA-7-F (100 kOhm resistors) as a substitute?

A: DDTC115ECA-7-F can be substituted if the circuit design accommodates the different internal resistor configuration. The 100 kOhm resistors produce a higher DC current gain (82 @ 5mA, 5V) compared to the RN1402,LF (50 @ 10mA, 5V). This part is suitable for applications where higher current gain is beneficial or where the circuit bias network is designed for 100 kOhm internal resistor values. Direct substitution without circuit analysis is not recommended if the original design assumes 10 kOhm resistor values.

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