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RN1111ACT(TPL3) Equivalent & Substitute Parts Reference
Part Overview
RN1111ACT(TPL3) is a pre-biased NPN bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage, offered in surface mount CST3 (SOT-883) packaging. It features a maximum collector voltage of 50 V, collector current up to 80 mA, and base resistor of 10 kOhms, suitable for general-purpose switching and amplification applications in compact circuit layouts. The product has RoHS compliance and is currently active with available inventory. Locating alternative or equivalent models is essential for engineers managing multi-source procurement, ensuring continuous production, and maintaining compatibility in product platforms where RN1111ACT(TPL3) is specified.
Substiute Parts
Key Parameters
| Parameter | RN1111ACT(TPL3) Value |
|---|---|
| Transistor Type | NPN - Pre-Biased |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Current - Collector (Ic) (Max) | 80 mA |
| Power - Max | 100 mW |
| Resistor - Base (R1) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Mounting Type | Surface Mount |
| Package / Case | SC-101, SOT-883 (CST3) |
| RoHS Status | RoHS Compliant |
| Product Status | Active |
Substitute Part Grouping Explanation
Substitution logic for pre-biased NPN BJT in the Transistors, Bipolar (BJT) category is based strictly on matched key electrical and mechanical parameters: transistor type, collector-emitter breakdown voltage, collector current, base resistor value, power dissipation, and packaging format. Active status and compliance certifications further qualify alternatives. Only parts explicitly referenced in the provided input and meeting these parameters are included.
Parameter Comparison
| Parameter | RN1111ACT(TPL3) | PDTC114TM,315 |
|---|---|---|
| Transistor Type | NPN - Pre-Biased | Pre-Biased |
| Category | Transistors, Bipolar (BJT) | Transistors, Bipolar (BJT) |
| Product Status | Active | Active |
| Manufacturer | Toshiba Semiconductor and Storage | Philips |
| Packaging | - | Bulk |
| RoHS Status | RoHS Compliant | - |
| ECCN | EAR99 | EAR99 |
| HTSUS | 8541.21.0095 | 8541.21.0095 |
Engineering Selection Recommendations
Both RN1111ACT(TPL3) and PDTC114TM,315 are active Transistors, Bipolar (BJT) products and share the same ECCN and HTSUS codes. RN1111ACT(TPL3) is specified as RoHS compliant. PDTC114TM,315 is indicated as REACH unaffected but does not explicitly specify RoHS status in the provided input. Selection between RN1111ACT(TPL3) and PDTC114TM,315 can be made based on inventory availability and compliance requirements per documented certifications.
Frequently Asked Questions (FAQ)
Q: What parameters must match when substituting a pre-biased NPN BJT?
A: Transistor type, collector-emitter breakdown voltage, collector current rating, base resistor value, power dissipation, and packaging or mounting type.
Q: Is package compatibility important for substitution?
A: Yes, matching package or case (e.g., SC-101, SOT-883) is critical to ensure physical compatibility with existing circuit layouts.
Q: What compliance certifications should be verified?
A: Refer to RoHS, REACH, ECCN, and HTSUS statuses explicitly provided. Only select parts with confirmed compliance for application requirements.
Q: Can substituting affect circuit functionality?
A: Substitution is only valid when all key parameters and packaging match strictly as listed in the provided input.
Q: Are both RN1111ACT(TPL3) and PDTC114TM,315 currently available and active?
A: Yes, both parts are indicated as active and available based on the provided inventory information.
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