RN1105ACT(TPL3) Equivalent & Substitute Parts

Part Overview

The RN1105ACT(TPL3) is a pre-biased NPN bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount device is designed for general-purpose switching and amplification applications with a maximum collector current of 80 mA and collector-emitter breakdown voltage of 50 V. The part is classified as obsolete, making equivalent substitutes necessary for new designs and ongoing production requirements. Active alternatives with compatible electrical and mechanical specifications are available from multiple manufacturers including Diodes Incorporated, Nexperia USA Inc., and NXP Semiconductors.

Substiute Parts

RN1105ACT(TPL3)

Toshiba Semiconductor and StorageIn Stock: 999RN1105ACT(TPL3) Datasheet

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RN1105MFV,L3F

Toshiba Semiconductor and StorageIn Stock: 1012RN1105MFV,L3F Datasheet

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DDTC123JLP-7

Diodes IncorporatedIn Stock: 17273DDTC123JLP-7 Datasheet

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PDTC123EMB,315

Nexperia USA Inc.In Stock: 976PDTC123EMB,315 Datasheet

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PDTC123JM,315

NXP USA Inc.In Stock: 10856PDTC123JM,315 Datasheet

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PDTC123TM,315

Nexperia USA Inc.In Stock: 1072PDTC123TM,315 Datasheet

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PDTC123YMB,315

NXP SemiconductorsIn Stock: 105568PDTC123YMB,315 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the RN1105ACT(TPL3) is determined by strict equivalence of the following electrical and mechanical parameters:

Critical Matching Parameters:

• Transistor type: NPN - Pre-Biased configuration
• Collector-emitter breakdown voltage: 50 V (maximum)
• Base resistor (R1): 2.2 kOhms
• Emitter-base resistor (R2): 47 kOhms
• Mounting type: Surface Mount
• Maximum collector current: 80 mA or greater
• Maximum power dissipation: 100 mW or greater

Acceptable Variation Parameters:

• DC current gain (hFE) may vary within device specifications
• Vce saturation characteristics may differ within acceptable operating ranges
• Collector cutoff current may vary
• Package case variants (SC-101, SOT-883, DFN1006-3, VESM) are acceptable provided pin configuration and electrical performance remain compatible

Substitute parts must maintain the 2.2 kOhms / 47 kOhms resistor network configuration to ensure proper biasing behavior in the target application. Parts with different resistor values (such as PDTC123EMB,315 with 2.2 kOhms / 2.2 kOhms) are not direct substitutes due to altered biasing characteristics.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: PDTC123JM,315 (NXP USA Inc.)

The PDTC123JM,315 is the closest functional equivalent to the RN1105ACT(TPL3). It maintains identical base and emitter-base resistor values (2.2 kOhms / 47 kOhms), matching collector-emitter breakdown voltage (50 V), and compatible package options (SC-101, SOT-883). The device is in active production status with higher maximum power dissipation (250 mW versus 100 mW), providing design margin. DC current gain at 10 mA, 5V is 100, compared to 80 for the original part, representing acceptable variation within pre-biased BJT specifications. Vce saturation is superior at 100 mV versus 150 mV.

Secondary Substitute: RN1105MFV,L3F (Toshiba Semiconductor and Storage)

This Toshiba variant maintains identical electrical specifications to the RN1105ACT(TPL3) including resistor network configuration and DC current gain characteristics. The device is in active production status. Maximum collector current is increased to 100 mA with maximum power dissipation of 150 mW. Package variant is SOT-723, which differs from the original SC-101/SOT-883 options and requires PCB layout verification for pin compatibility.

Tertiary Substitute: DDTC123JLP-7 (Diodes Incorporated)

The DDTC123JLP-7 meets all critical electrical parameters with 2.2 kOhms / 47 kOhms resistor configuration and 50 V breakdown voltage. The device is in active production with significantly higher power dissipation capability (250 mW). DC current gain is elevated at 180 @ 50 mA, 5V. Package is 3-UFDFN (X1-DFN1006-3), requiring PCB footprint verification. ROHS3 compliance is confirmed.

Not Recommended: PDTC123EMB,315 and PDTC123TM,315

PDTC123EMB,315 features a different resistor network (2.2 kOhms / 2.2 kOhms) that alters biasing characteristics and is not a direct substitute. PDTC123TM,315 does not specify the emitter-base resistor value in the provided data, preventing confirmation of biasing equivalence.

Inventory and Availability:

PDTC123JM,315 offers the highest inventory availability (10,758 pcs) among recommended substitutes. DDTC123JLP-7 provides substantial stock (17,200 pcs). RN1105MFV,L3F maintains 913 pcs in inventory.

Frequently Asked Questions (FAQ)

Q: Why is the RN1105ACT(TPL3) being discontinued?

A: The RN1105ACT(TPL3) is classified as obsolete. Equivalent active alternatives from multiple manufacturers provide superior performance characteristics, higher power dissipation ratings, and confirmed compliance certifications, making them preferred for new designs and production continuity.

Q: What makes a part a valid substitute for the RN1105ACT(TPL3)?

A: A valid substitute must maintain the NPN pre-biased configuration with identical base resistor (2.2 kOhms) and emitter-base resistor (47 kOhms) values. The collector-emitter breakdown voltage must be 50 V or greater. Maximum collector current must be 80 mA or greater. Surface mount mounting type is required. These parameters ensure the biasing network and electrical performance remain compatible with the original application circuit.

Q: Can I use PDTC123EMB,315 as a substitute?

A: No. The PDTC123EMB,315 features a 2.2 kOhms / 2.2 kOhms resistor network, differing from the required 2.2 kOhms / 47 kOhms configuration. This resistor variation alters the biasing characteristics and operating point of the transistor, making it unsuitable as a direct replacement.

Q: Are package differences between substitutes significant?

A: Package differences require PCB layout verification. The RN1105ACT(TPL3) uses SC-101 or SOT-883 packages. Substitutes such as RN1105MFV,L3F (SOT-723) and DDTC123JLP-7 (3-UFDFN) have different physical dimensions and pin configurations. Footprint compatibility must be confirmed before design implementation. PDTC123JM,315 maintains SC-101/SOT-883 compatibility, eliminating this concern.

Q: What is the significance of higher power dissipation ratings in substitute parts?

A: Substitute parts with higher maximum power dissipation (150 mW to 250 mW versus 100 mW) provide additional thermal margin and design flexibility. This allows operation at higher current levels or in higher ambient temperature environments without exceeding device ratings. Higher power ratings do not affect compatibility with the original 100 mW application.

Q: How do DC current gain variations affect substitution?

A: Pre-biased BJTs are designed with integrated resistor networks that establish a defined operating point. Variations in DC current gain (hFE) between 80 and 180 are acceptable within the pre-biased architecture because the resistor network compensates for gain variations. The biasing network maintains consistent collector current across the specified gain range, ensuring functional equivalence.

Q: What compliance certifications should I verify for my application?

A: Verify RoHS compliance status for your regulatory requirements. DDTC123JLP-7 and PDTC123TM,315 confirm ROHS3 compliance. PDTC123TM,315 additionally qualifies to AEC-Q100 automotive standards if automotive-grade components are required. Moisture sensitivity level (MSL) is 1 (Unlimited) for all recommended substitutes, matching the original part.

Q: Can I use PDTC123YMB,315 as a substitute?

A: PDTC123YMB,315 cannot be confirmed as a direct substitute. The provided data does not specify critical parameters including collector current rating, breakdown voltage, resistor values, or power dissipation. Without complete electrical specifications, functional equivalence cannot be established.