RN1102,LF(CT Pre-Biased NPN Transistor Equivalent & Substitute Parts

Part Overview

The RN1102,LF(CT is an active pre-biased NPN bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. This surface mount device operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and is designed for general-purpose switching and amplification applications. The part is currently in active production status with 3776 units in stock. Substitute parts are identified when equivalent electrical specifications and mechanical compatibility exist, enabling component procurement flexibility and supply chain continuity.

Substiute Parts

RN1102,LF(CT
Toshiba Semiconductor and StorageIn Stock: 3886RN1102,LF(CT Datasheet
RN1102,LF(CT
Current Part
SDTC114EET1G
onsemiIn Stock: 24454SDTC114EET1G Datasheet
SDTC114EET1G
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
Current - Collector Cutoff (Max) 500 nA
Power - Max 100 mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the RN1102,LF(CT is determined by strict equivalence across the following critical parameters:

Electrical Compatibility Requirements:

  • Transistor type classification: NPN - Pre-Biased
  • Maximum collector current: 100 mA
  • Collector-emitter breakdown voltage: 50 V
  • Base resistor (R1): 10 kOhms
  • Emitter-base resistor (R2): 10 kOhms
  • Collector cutoff current: 500 nA maximum

Mechanical Compatibility Requirements:

  • Mounting type: Surface Mount
  • Package designation: SC-75, SOT-416

Compliance Requirements:

  • RoHS3 compliance status
  • Moisture sensitivity level: 1 (Unlimited)

The SDTC114EET1G from onsemi meets all electrical and mechanical compatibility criteria. Variations in DC current gain (hFE) measurement conditions, saturation voltage specifications, and maximum power dissipation do not preclude substitution when the primary functional parameters align within the specified ranges.

Parameter Comparison

Parameter RN1102,LF(CT (Toshiba) SDTC114EET1G (onsemi) Unit
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 50 V
Resistor - Base (R1) 10 10 kOhms
Resistor - Emitter Base (R2) 10 10 kOhms
Current - Collector Cutoff (Max) 500 500 nA
Mounting Type Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-75, SOT-416
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active

Engineering Selection Recommendations

Both the RN1102,LF(CT and SDTC114EET1G are active production components with ROHS3 compliance and unlimited moisture sensitivity classification. The SDTC114EET1G carries AEC-Q101 automotive qualification and REACH unaffected status, making it suitable for applications requiring automotive-grade reliability. The RN1102,LF(CT remains the primary selection when Toshiba sourcing is specified or preferred. The SDTC114EET1G serves as a direct functional equivalent for general-purpose applications and automotive implementations where AEC-Q101 qualification is required. Both parts share identical electrical operating parameters within the specified ranges and occupy the same SC-75, SOT-416 package footprint, enabling direct board-level substitution without design modification.

Frequently Asked Questions (FAQ)

Q: Can the SDTC114EET1G replace the RN1102,LF(CT in existing designs?

A: Yes. Both parts are NPN pre-biased transistors with identical maximum collector current (100 mA), collector-emitter breakdown voltage (50 V), base and emitter-base resistor values (10 kOhms each), and collector cutoff current (500 nA). Both use the SC-75, SOT-416 package and are ROHS3 compliant with MSL 1 rating. Direct substitution is electrically and mechanically compatible.

Q: What are the differences between these two parts?

A: The SDTC114EET1G has a higher maximum power dissipation (200 mW versus 100 mW) and carries AEC-Q101 automotive qualification. DC current gain measurement conditions differ between the two parts. These differences do not affect substitution compatibility for applications within the RN1102,LF(CT specifications.

Q: Are there package compatibility concerns?

A: No. Both parts use the identical SC-75, SOT-416 surface mount package. PCB footprints, solder pad layouts, and component placement are directly compatible.

Q: Which part should be selected for automotive applications?

A: The SDTC114EET1G is qualified to AEC-Q101 automotive standards and is the appropriate selection for automotive-grade reliability requirements. The RN1102,LF(CT is suitable for general-purpose applications.

Q: Are both parts currently available?

A: Yes. The RN1102,LF(CT has 3776 units in stock. The SDTC114EET1G has 24400 units in stock. Both are active production components.

Q: Do these parts require different PCB layout or thermal management?

A: No. Both parts are surface mount devices in the same package with equivalent thermal characteristics within their respective power ratings. Standard PCB layout practices for pre-biased BJT transistors apply to both.

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