RM25C256DS-LSNI-B Equivalent & Substitute Parts

Part Overview

The RM25C256DS-LSNI-B is a CBRAM (Conductive Bridging RAM) memory IC manufactured by Renesas Electronics Corporation. This 256Kbit non-volatile memory device operates via SPI interface at 20 MHz and is housed in an 8-SOIC surface mount package. The product is classified as obsolete, making identification of functionally equivalent alternatives essential for ongoing system support and component procurement.

Substiute Parts

RM25C256DS-LSNI-B

Renesas Electronics CorporationIn Stock: 1220RM25C256DS-LSNI-B Datasheet

Current PartRFQ

CAT25256VI-G

onsemiIn Stock: 1023CAT25256VI-G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the RM25C256DS-LSNI-B is determined by the following critical parameters:

• Memory Capacity: 256Kbit capacity requirement
• Memory Interface: SPI protocol compatibility
• Operating Frequency: 20 MHz clock frequency support
• Package Compatibility: 8-SOIC form factor with matching pinout
• Supply Voltage Range: Overlap with 1.65V ~ 3.6V specification
• Operating Temperature Range: Support for -40°C ~ 85°C
• Non-Volatile Storage: Persistent data retention requirement

The CAT25256VI-G from onsemi meets these substitution criteria. While the CAT25256VI-G uses EEPROM technology rather than CBRAM, it maintains functional equivalence through identical memory capacity, SPI interface, clock frequency, package form factor, and operating temperature range. The supply voltage range of the CAT25256VI-G (1.8V ~ 5.5V) encompasses the RM25C256DS-LSNI-B specification.

Parameter Comparison

Engineering Selection Recommendations

Both the RM25C256DS-LSNI-B and CAT25256VI-G are classified as obsolete products. Selection between these parts should be based on:

• Supply Voltage Compatibility: The CAT25256VI-G supports a wider supply voltage range (1.8V ~ 5.5V) compared to the RM25C256DS-LSNI-B (1.65V ~ 3.6V). Systems operating within the 1.8V ~ 3.6V window are compatible with both devices.
• Regulatory Compliance: Both parts maintain ROHS3 compliance and REACH unaffected status, meeting current environmental and regulatory requirements.
• Availability: Current inventory levels should be evaluated for procurement planning, as both products are obsolete and subject to limited stock availability.

Frequently Asked Questions (FAQ)

Q: Can the CAT25256VI-G directly replace the RM25C256DS-LSNI-B?

A: Yes, the CAT25256VI-G is functionally equivalent for applications requiring 256Kbit SPI non-volatile memory in an 8-SOIC package. Both devices support identical memory capacity, SPI interface, 20 MHz clock frequency, and operating temperature range. The primary difference is memory technology (EEPROM vs. CBRAM) and supply voltage range.

Q: What is the difference between CBRAM and EEPROM technology?

A: CBRAM and EEPROM are both non-volatile memory technologies. The RM25C256DS-LSNI-B uses CBRAM (Conductive Bridging RAM), while the CAT25256VI-G uses EEPROM. Both retain data without power and support SPI interface operation. The substitution is valid based on matching functional parameters.

Q: Are the pin configurations identical?

A: Both devices use the 8-SOIC package with 0.154" width and 3.90mm dimensions. Pin compatibility should be verified against the specific application schematic and PCB layout, as package form factor alone does not guarantee pin-for-pin compatibility.

Q: What supply voltage should I use for the CAT25256VI-G?

A: The CAT25256VI-G operates across 1.8V ~ 5.5V. If your system uses the RM25C256DS-LSNI-B at voltages between 1.8V and 3.6V, the CAT25256VI-G will operate within specification. Systems using supply voltages below 1.8V require the original RM25C256DS-LSNI-B or alternative parts rated for lower voltages.

Q: Why are both products listed as obsolete?

A: Obsolete status indicates these products are no longer in active production. Procurement should prioritize available inventory or identify next-generation alternatives from manufacturers for long-term system support.