RM25C256C-LSNI-T Equivalent & Substitute Parts

Part Overview

The RM25C256C-LSNI-T is a CBRAM Memory IC with 256Kbit capacity, SPI interface, and 10 MHz clock frequency manufactured by Renesas Electronics Corporation. This component is classified as Obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity. The part is packaged in 8-SOIC surface mount configuration with supply voltage range of 1.65V to 3.6V and operating temperature range of -40°C to 85°C.

Key Parameters

Parameter	Value
Memory Type	Non-Volatile
Memory Format	CBRAM
Memory Size	256Kbit
Memory Interface	SPI
Clock Frequency	10 MHz
Package / Case	8-SOIC (0.154", 3.90mm Width)
Voltage - Supply	1.65V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Write Cycle Time - Word, Page	100µs, 5ms

Substitute Part Grouping Explanation

Substitution of the RM25C256C-LSNI-T is determined by the following critical parameters:

Memory Size: 256Kbit capacity requirement
Memory Interface: SPI protocol compatibility
Package / Case: 8-SOIC form factor with 0.154" width (3.90mm)
Clock Frequency: 10 MHz operation
Operating Temperature Range: -40°C to 85°C
Mounting Type: Surface Mount
Non-Volatile Memory Type: Persistent data storage requirement

The substitute part 25AA256T-I/SN from Microchip Technology meets these core electrical and mechanical parameters. While the memory technology differs (EEPROM versus CBRAM), both are non-volatile memory devices with identical SPI interface, 256Kbit capacity, 10 MHz clock frequency, and 8-SOIC packaging. The substitute part maintains functional compatibility for applications requiring 256Kbit SPI-based non-volatile memory in the specified package.

Parameter Comparison

Parameter	RM25C256C-LSNI-T (Main)	25AA256T-I/SN (Substitute)
Manufacturer	Renesas Electronics Corporation	Microchip Technology
Memory Type	Non-Volatile	Non-Volatile
Memory Format	CBRAM	EEPROM
Memory Size	256Kbit	256Kbit
Memory Organization	64 Bytes Page Size	32K x 8
Memory Interface	SPI	SPI
Clock Frequency	10 MHz	10 MHz
Write Cycle Time - Word, Page	100µs, 5ms	5ms
Voltage - Supply	1.65V ~ 3.6V	1.8V ~ 5.5V
Operating Temperature	-40°C ~ 85°C (TA)	-40°C ~ 85°C (TA)
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Mounting Type	Surface Mount	Surface Mount
Product Status	Obsolete	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

The 25AA256T-I/SN is classified as Active product status, ensuring ongoing availability and manufacturer support, whereas the RM25C256C-LSNI-T is Obsolete. Both parts maintain ROHS3 compliance and REACH Unaffected status, satisfying regulatory requirements for equivalent component selection.

The substitute part demonstrates broader supply voltage tolerance (1.8V to 5.5V versus 1.65V to 3.6V), providing enhanced flexibility for multi-voltage system designs. Both components share identical package geometry, clock frequency, operating temperature range, and SPI interface specification, enabling direct functional substitution in circuit designs.

The primary technical distinction is memory technology: CBRAM versus EEPROM. This difference does not affect SPI protocol compatibility, addressing, or data storage capacity. Applications requiring specific CBRAM technology characteristics must evaluate whether EEPROM operation is functionally acceptable for the intended use case.

Frequently Asked Questions (FAQ)

Q: Can the 25AA256T-I/SN directly replace the RM25C256C-LSNI-T in existing designs?

A: Yes, for applications where EEPROM technology is functionally equivalent to CBRAM. Both parts share identical SPI interface, 256Kbit capacity, 10 MHz clock frequency, 8-SOIC package geometry, and operating temperature range. Circuit board layout and PCB footprints are compatible without modification.

Q: What is the key difference between these two parts?

A: The primary difference is memory technology. The RM25C256C-LSNI-T uses CBRAM (Conductive Bridging RAM), while the 25AA256T-I/SN uses EEPROM (Electrically Erasable Programmable Read-Only Memory). Both are non-volatile memory types with identical electrical interface specifications for this application.

Q: Are there voltage supply compatibility concerns?

A: The substitute part accepts a wider supply voltage range (1.8V to 5.5V) compared to the original part (1.65V to 3.6V). If your system operates within the original part's voltage range, the substitute part will function correctly. Systems operating below 1.8V require verification that the original part's lower voltage limit is necessary.

Q: Do both parts use the same package footprint?

A: Yes. Both the RM25C256C-LSNI-T and 25AA256T-I/SN are packaged in 8-SOIC with 0.154" width (3.90mm). PCB footprints and soldering procedures are identical.

Q: What is the product status significance?

A: The RM25C256C-LSNI-T is Obsolete, indicating Renesas Electronics has discontinued manufacturing and support. The 25AA256T-I/SN is Active, meaning Microchip Technology continues production and provides ongoing technical support, ensuring long-term component availability.

Q: Are compliance certifications equivalent?

A: Yes. Both parts are ROHS3 compliant, REACH Unaffected, and carry MSL 1 (Unlimited) moisture sensitivity rating, satisfying identical regulatory and environmental requirements.

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