RM25C128DS-LSNI-B Equivalent & Substitute Parts

Part Overview

The RM25C128DS-LSNI-B is a 128Kbit CBRAM (Conductive Bridging RAM) non-volatile memory IC manufactured by Renesas Electronics Corporation. This device features an SPI interface with 20 MHz clock frequency and operates across a supply voltage range of 1.65V to 3.6V. The component is housed in an 8-TSSOP surface mount package with a page size of 64 bytes and write cycle times of 100µs for word operations and 5ms for page operations.

The RM25C128DS-LSNI-B is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for legacy systems utilizing this memory IC.

Substiute Parts

RM25C128DS-LSNI-B

Renesas Electronics CorporationIn Stock: 1194RM25C128DS-LSNI-B Datasheet

Current PartRFQ

CAT25128YI-G

onsemiIn Stock: 949CAT25128YI-G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the RM25C128DS-LSNI-B is determined by the following critical parameters:

• Memory Size: 128Kbit capacity
• Memory Interface: SPI protocol compatibility
• Package Type: 8-TSSOP surface mount form factor
• Clock Frequency: 20 MHz operation
• Operating Temperature Range: -40°C ~ 85°C
• Supply Voltage Compatibility: Device must operate within or encompass the 1.65V ~ 3.6V range
• Non-Volatile Memory Type: Persistent data storage without power

The CAT25128YI-G from onsemi meets these substitution criteria. While the RM25C128DS-LSNI-B uses CBRAM technology and the CAT25128YI-G uses EEPROM technology, both are 128Kbit non-volatile memory devices with SPI interfaces, identical package specifications, matching clock frequencies, and compatible operating temperature ranges. The CAT25128YI-G supply voltage range (1.8V ~ 5.5V) encompasses the RM25C128DS-LSNI-B requirement.

Parameter Comparison

Engineering Selection Recommendations

Both the RM25C128DS-LSNI-B and CAT25128YI-G are classified as obsolete products. Selection between these devices should be based on the following factors:

Compliance and Certification: Both devices are ROHS3 compliant, REACH unaffected, and carry MSL rating of 1 (unlimited moisture sensitivity level). Both share identical ECCN (EAR99) and HTSUS (8542.32.0051) classifications, ensuring equivalent regulatory and trade compliance.

Supply Voltage Consideration: The CAT25128YI-G operates across 1.8V ~ 5.5V, providing broader voltage tolerance than the RM25C128DS-LSNI-B (1.65V ~ 3.6V). Applications operating at the lower end of the RM25C128DS-LSNI-B range (1.65V ~ 1.8V) require verification of CAT25128YI-G compatibility.

Memory Technology Difference: The RM25C128DS-LSNI-B employs CBRAM technology while the CAT25128YI-G uses EEPROM. Both provide non-volatile storage with identical capacity, interface, and timing specifications. Design validation is necessary to confirm functional equivalence in the target application.

Inventory Availability: Current stock levels show RM25C128DS-LSNI-B at 1089 units and CAT25128YI-G at 939 units, both available as new original components.

Frequently Asked Questions (FAQ)

Q: Can the CAT25128YI-G directly replace the RM25C128DS-LSNI-B without PCB modifications?

A: Yes, from a physical and electrical interface perspective. Both devices use identical 8-TSSOP packaging, SPI protocol, 20 MHz clock frequency, and -40°C ~ 85°C operating temperature range. Pin-to-pin compatibility is maintained. However, the difference between CBRAM and EEPROM memory technologies may require application-level validation to confirm functional equivalence.

Q: What is the key difference between CBRAM and EEPROM technologies in this comparison?

A: CBRAM (Conductive Bridging RAM) and EEPROM (Electrically Erasable Programmable Read-Only Memory) are distinct non-volatile memory technologies. Both retain data without power and support SPI interfaces. The RM25C128DS-LSNI-B uses CBRAM with a 64-byte page size and 100µs word write time. The CAT25128YI-G uses EEPROM with 16K x 8 organization and 5ms page write time. Application requirements for write performance, endurance cycles, and data retention characteristics should be evaluated.

Q: Are there supply voltage compatibility concerns when substituting?

A: The CAT25128YI-G supply range (1.8V ~ 5.5V) overlaps with the RM25C128DS-LSNI-B range (1.65V ~ 3.6V) from 1.8V to 3.6V. Applications operating the RM25C128DS-LSNI-B below 1.8V require confirmation that the CAT25128YI-G minimum voltage specification does not create functional issues.

Q: Are both devices suitable for new designs or only legacy system support?

A: Both the RM25C128DS-LSNI-B and CAT25128YI-G are classified as obsolete. These devices are appropriate for maintaining existing systems and supporting production of legacy designs. New design implementations should evaluate current-generation memory solutions.

Q: What compliance certifications apply to both devices?

A: Both devices are ROHS3 compliant, REACH unaffected, and carry identical trade classifications (ECCN: EAR99, HTSUS: 8542.32.0051). Moisture sensitivity level is 1 (unlimited) for both, indicating no special moisture handling requirements during storage or assembly.