RM24C64C-LSNI-B Equivalent & Substitute Parts

Part Overview

The RM24C64C-LSNI-B is a 64Kbit CBRAM non-volatile memory IC manufactured by Renesas Electronics Corporation, featuring I2C interface operation at 1 MHz. This component is classified as obsolete, making identification of functionally equivalent alternatives essential for ongoing system support and new design implementations. The CBRAM technology and specific electrical characteristics define the substitution parameters for this device.

Substiute Parts

RM24C64C-LSNI-B
Renesas Electronics CorporationIn Stock: 696RM24C64C-LSNI-B Datasheet
RM24C64C-LSNI-B
Current Part
24CW640T-I/SN
Microchip TechnologyIn Stock: 736224CW640T-I/SN Datasheet
24CW640T-I/SN
MFR Recommended

Key Parameters

Parameter Value
Memory Size 64Kbit
Memory Type Non-Volatile
Memory Interface I2C
Clock Frequency 1 MHz
Package / Case 8-SOIC (0.154", 3.90mm Width)
Voltage - Supply 1.65V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the RM24C64C-LSNI-B is determined by the following critical parameters:

Memory Capacity & Interface: The substitute must provide 64Kbit storage capacity with I2C serial interface to maintain protocol compatibility with existing system designs.

Package Compatibility: The 8-SOIC surface mount package is mandatory for PCB layout compatibility. Pin count and physical dimensions must match the original specification.

Electrical Operating Range: Supply voltage range and operating temperature must encompass or match the original device specifications to ensure reliable operation across all intended environmental conditions.

Non-Volatile Storage Technology: While the original device uses CBRAM technology, equivalent non-volatile memory technologies (such as EEPROM) that meet the same functional and electrical requirements are acceptable substitutes.

Compliance & Certification: RoHS3 compliance and REACH unaffected status ensure regulatory alignment with current manufacturing and environmental standards.

Parameter Comparison

Parameter RM24C64C-LSNI-B (Original) 24CW640T-I/SN (Substitute)
Manufacturer Renesas Electronics Corporation Microchip Technology
Memory Size 64Kbit 64Kbit
Memory Type Non-Volatile Non-Volatile
Memory Format CBRAM® EEPROM
Memory Interface I2C I2C
Clock Frequency 1 MHz 1 MHz
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Voltage - Supply 1.65V ~ 3.6V 1.6V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

The 24CW640T-I/SN from Microchip Technology qualifies as a direct substitute based on matching memory capacity, I2C interface protocol, clock frequency, package form factor, and operating temperature range. Both devices maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory continuity.

The substitute device features an extended supply voltage range (1.6V ~ 5.5V) compared to the original (1.65V ~ 3.6V), providing broader operational flexibility. The memory technology differs (EEPROM versus CBRAM), but both are non-volatile storage technologies suitable for equivalent functional applications.

Product status transition from obsolete (original) to active (substitute) ensures long-term availability and manufacturing support for ongoing production requirements.

Frequently Asked Questions (FAQ)

Q: Can the 24CW640T-I/SN directly replace the RM24C64C-LSNI-B without PCB modifications?

A: Yes. Both devices use identical 8-SOIC packaging with matching pin configurations and I2C interface protocols. No PCB layout changes are required for physical or electrical integration.

Q: What is the primary difference between CBRAM and EEPROM technologies in this application?

A: Both are non-volatile memory technologies. CBRAM (Conductive Bridging RAM) and EEPROM (Electrically Erasable Programmable Read-Only Memory) differ in internal architecture and write cycle characteristics. For 64Kbit I2C memory applications, both technologies provide equivalent functional performance.

Q: Does the extended voltage range of the substitute affect system compatibility?

A: No. The substitute's supply voltage range (1.6V ~ 5.5V) encompasses the original specification (1.65V ~ 3.6V). Systems designed for the original device operate within the substitute's supported voltage envelope.

Q: Are there any compliance or certification differences between the two devices?

A: Both devices maintain ROHS3 compliance and REACH unaffected status. No compliance gaps exist between the original and substitute components.

Q: What is the availability status of each device?

A: The RM24C64C-LSNI-B is classified as obsolete with limited inventory (646 Pcs). The 24CW640T-I/SN is active production with robust availability (7285 Pcs in stock), ensuring reliable supply for new designs and production continuity.

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