RM24C32C-LSNI-B Equivalent & Substitute Parts

Part Overview

The RM24C32C-LSNI-B is a 32Kbit CBRAM (Conductive Bridging RAM) non-volatile memory IC manufactured by Renesas Electronics Corporation. This component features I2C interface operation at 1 MHz and is housed in an 8-SOIC package. The product is classified as obsolete, necessitating identification of functionally compatible alternatives for ongoing system support and new design implementations.

Substiute Parts

RM24C32C-LSNI-B
Renesas Electronics CorporationIn Stock: 3772RM24C32C-LSNI-B Datasheet
RM24C32C-LSNI-B
Current Part
FT24C64A-ESR-B
Fremont Micro Devices LtdIn Stock: 860FT24C64A-ESR-B Datasheet
FT24C64A-ESR-B
MFR Recommended

Key Parameters

Parameter Value
Memory Type Non-Volatile
Memory Format CBRAM
Memory Size 32Kbit
Memory Interface I2C
Clock Frequency 1 MHz
Voltage Supply Range 1.65V ~ 3.6V
Operating Temperature -40°C ~ 85°C
Package Type 8-SOIC (0.154", 3.90mm Width)
Write Cycle Time (Page) 1.2ms
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the RM24C32C-LSNI-B is determined by the following critical parameters:

  • Memory Interface: I2C protocol compatibility is mandatory
  • Package Compatibility: 8-SOIC form factor with 0.154" width (3.90mm) ensures mechanical fit
  • Non-Volatile Memory Type: Functional requirement for data retention
  • Voltage Supply Range: Operating range must encompass or exceed 1.65V ~ 3.6V
  • Operating Temperature Range: Must support -40°C ~ 85°C minimum
  • RoHS Compliance: ROHS3 compliance required for regulatory alignment

The FT24C64A-ESR-B qualifies as a substitute based on matching I2C interface, identical package dimensions, compatible voltage and temperature ranges, and equivalent RoHS compliance status. Memory capacity difference (64Kbit vs. 32Kbit) represents functional enhancement rather than incompatibility.

Parameter Comparison

Parameter RM24C32C-LSNI-B (Main) FT24C64A-ESR-B (Substitute)
Manufacturer Renesas Electronics Corporation Fremont Micro Devices Ltd
Memory Type Non-Volatile Non-Volatile
Memory Format CBRAM EEPROM
Memory Size 32Kbit 64Kbit
Memory Interface I2C I2C
Clock Frequency 1 MHz 1 MHz
Voltage Supply Range 1.65V ~ 3.6V 1.8V ~ 5.5V
Operating Temperature -40°C ~ 85°C -40°C ~ 85°C
Package Type 8-SOIC 8-SOP
Write Cycle Time (Page) 1.2ms 5ms
RoHS Status ROHS3 Compliant ROHS3 Compliant
Product Status Obsolete Active

Engineering Selection Recommendations

The FT24C64A-ESR-B is suitable for RM24C32C-LSNI-B replacement applications based on the following factors:

  • Product Status: The substitute maintains active product status, ensuring continued availability and manufacturer support
  • Regulatory Compliance: Both components maintain ROHS3 compliance and REACH unaffected status
  • Interface Compatibility: Identical I2C protocol and clock frequency (1 MHz) ensure direct functional compatibility
  • Electrical Compatibility: The substitute's expanded voltage range (1.8V ~ 5.5V) encompasses the original specification (1.65V ~ 3.6V)
  • Thermal Compatibility: Matching operating temperature range (-40°C ~ 85°C) maintains thermal performance requirements

Design considerations include memory capacity increase (64Kbit vs. 32Kbit) and page write cycle time extension (5ms vs. 1.2ms). These differences do not preclude substitution but require system-level evaluation for timing-critical applications.

Frequently Asked Questions (FAQ)

Q: Can the FT24C64A-ESR-B directly replace the RM24C32C-LSNI-B in existing designs?

A: Direct PCB-level replacement is possible due to identical 8-SOIC package dimensions and I2C interface compatibility. Firmware or software modifications may be required to address the increased memory capacity and extended write cycle time.

Q: What is the primary difference between CBRAM and EEPROM memory formats?

A: Both are non-volatile memory technologies suitable for I2C applications. CBRAM (Conductive Bridging RAM) and EEPROM (Electrically Erasable Programmable Read-Only Memory) differ in internal architecture and write characteristics. The FT24C64A-ESR-B uses EEPROM technology with a 5ms page write cycle compared to the original 1.2ms specification.

Q: Does the voltage supply range difference affect compatibility?

A: The FT24C64A-ESR-B supports 1.8V ~ 5.5V, which encompasses the original 1.65V ~ 3.6V range. Systems operating within the original voltage specification will function without modification. The expanded upper limit (5.5V vs. 3.6V) provides additional design flexibility.

Q: Are there package considerations for this substitution?

A: Both components use 8-pin SOIC packages with identical 0.154" (3.90mm) width. The supplier device package designation differs (8-SOIC vs. 8-SOP), but physical dimensions and pin spacing are compatible for standard PCB layouts.

Q: What compliance certifications apply to both components?

A: Both the RM24C32C-LSNI-B and FT24C64A-ESR-B maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment for industrial and commercial applications.

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