RM24C128DS-LSNI-B Equivalent & Substitute Parts

Part Overview

The RM24C128DS-LSNI-B is a 128Kbit CBRAM non-volatile memory IC manufactured by Renesas Electronics Corporation, featuring I2C interface operation at 1 MHz. This component is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing system support and new design implementations. The part is housed in an 8-SOIC surface mount package with a supply voltage range of 1.65V to 3.6V and operates across the industrial temperature range of -40°C to 85°C.

Substiute Parts

RM24C128DS-LSNI-B
Renesas Electronics CorporationIn Stock: 887RM24C128DS-LSNI-B Datasheet
RM24C128DS-LSNI-B
Current Part
24CW1280T-I/SN
Microchip TechnologyIn Stock: 936424CW1280T-I/SN Datasheet
24CW1280T-I/SN
MFR Recommended

Key Parameters

Parameter Value
Memory Type Non-Volatile
Memory Format CBRAM
Memory Size 128Kbit
Memory Interface I2C
Clock Frequency 1 MHz
Package / Case 8-SOIC (0.154", 3.90mm Width)
Voltage - Supply 1.65V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the RM24C128DS-LSNI-B is determined by the following critical parameters:

  • Memory Size: 128Kbit capacity requirement
  • Memory Interface: I2C protocol compatibility
  • Clock Frequency: 1 MHz operation
  • Package / Case: 8-SOIC form factor
  • Voltage - Supply: Operating voltage range compatibility
  • Operating Temperature: -40°C to 85°C range
  • Mounting Type: Surface mount configuration
  • Non-Volatile Memory Type: Persistent data storage requirement

The substitute part 24CW1280T-I/SN meets all critical electrical and mechanical parameters. While the memory format differs (EEPROM versus CBRAM), both technologies provide non-volatile storage with identical capacity, interface protocol, clock frequency, package configuration, and temperature operating range. The voltage supply range of the substitute (1.6V ~ 5.5V) encompasses the original part's range (1.65V ~ 3.6V), ensuring compatibility in existing circuit designs.

Parameter Comparison

Parameter RM24C128DS-LSNI-B (Main Part) 24CW1280T-I/SN (Substitute)
Manufacturer Renesas Electronics Corporation Microchip Technology
Memory Type Non-Volatile Non-Volatile
Memory Size 128Kbit 128Kbit
Memory Organization 64 Bytes Page Size 16K x 8
Memory Interface I2C I2C
Clock Frequency 1 MHz 1 MHz
Write Cycle Time - Page 5ms 5ms
Access Time Not specified 450 ns
Voltage - Supply 1.65V ~ 3.6V 1.6V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount Surface Mount
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

The 24CW1280T-I/SN qualifies as a direct substitute based on matching electrical specifications and identical package configuration. The substitute part carries active product status from Microchip Technology, ensuring long-term availability and supply chain continuity compared to the obsolete RM24C128DS-LSNI-B. Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for industrial and commercial applications.

The expanded voltage supply range (1.6V ~ 5.5V) of the substitute provides additional design flexibility while remaining fully compatible with circuits designed for the original part's 1.65V to 3.6V specification. Identical I2C interface protocol, 1 MHz clock frequency, and 8-SOIC package ensure direct functional replacement without circuit modification.

Frequently Asked Questions (FAQ)

Q: Can the 24CW1280T-I/SN replace the RM24C128DS-LSNI-B in existing designs?

A: Yes. Both parts share identical memory capacity (128Kbit), I2C interface protocol, 1 MHz clock frequency, 8-SOIC package configuration, and -40°C to 85°C operating temperature range. The substitute's voltage range encompasses the original part's specification, ensuring compatibility.

Q: What is the difference between CBRAM and EEPROM memory formats?

A: Both are non-volatile memory technologies. CBRAM (Conductive Bridging RAM) and EEPROM (Electrically Erasable Programmable Read-Only Memory) differ in internal architecture and operation principles, but both provide persistent data storage with identical electrical interface characteristics for this application.

Q: Are there package compatibility concerns?

A: No. Both parts use the 8-SOIC (0.154", 3.90mm Width) surface mount package. Pin configuration and footprint are identical, allowing direct PCB replacement without layout modification.

Q: Does the substitute part meet compliance requirements?

A: Yes. The 24CW1280T-I/SN is ROHS3 compliant and REACH unaffected, matching the regulatory status of the original part.

Q: What is the advantage of selecting the substitute part?

A: The 24CW1280T-I/SN carries active product status from Microchip Technology, ensuring availability and supply chain support. The original RM24C128DS-LSNI-B is obsolete, making the substitute the recommended choice for new designs and ongoing system support.

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