RJL5014DPK-00#T0 Equivalent & Substitute Parts

Part Overview

The RJL5014DPK-00#T0 is an N-Channel MOSFET manufactured by Renesas Electronics Corporation, rated for 500V drain-to-source voltage with 19A continuous drain current at 25°C. This device is housed in a TO-3P through-hole package and is designed for high-voltage switching applications requiring 150W power dissipation capability. The part maintains Active product status and carries ROHS3 compliance certification.

Substitute parts become necessary when the primary part experiences extended lead times, inventory constraints, or when design flexibility permits operation within the electrical and mechanical tolerances of alternative qualified devices. The RJL5014DPK-00#T0 has been identified with one qualified substitute that maintains critical electrical parameters within acceptable operating ranges.

Substiute Parts

RJL5014DPK-00#T0
Renesas Electronics CorporationIn Stock: 846RJL5014DPK-00#T0 Datasheet
RJL5014DPK-00#T0
Current Part
IXTQ16N50P
IXYSIn Stock: 2143IXTQ16N50P Datasheet
IXTQ16N50P
Similar

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 19 A
Gate-Source Voltage (Vgs Max) ±30 V
On-State Resistance (Rds On Max) @ 10V 400 mOhm
Gate Charge (Qg Max) @ 10V 43 nC
Power Dissipation (Max) 150 W
Operating Temperature (TJ) 150 °C
Package Type TO-3P
Mounting Type Through Hole
FET Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution eligibility for the RJL5014DPK-00#T0 is determined by the following critical parameters:

Voltage Rating Requirement: The substitute must maintain a Drain-to-Source Voltage (Vdss) rating of 500V to ensure safe operation in the intended application circuit.

Current Capacity: The substitute must support continuous drain current at or above the application requirement. The RJL5014DPK-00#T0 specifies 19A at 25°C; substitutes with lower current ratings require circuit-level current derating analysis.

On-State Resistance (Rds On): The substitute must maintain Rds On specifications at 400mOhm or lower at the specified gate-source voltage (10V) to preserve switching efficiency and thermal performance.

Gate Charge (Qg): The substitute must maintain gate charge at 43nC or lower at 10V to ensure compatibility with existing gate drive circuitry.

Package and Mounting: The substitute must use the TO-3P through-hole package to maintain mechanical compatibility with existing PCB layouts and thermal management solutions.

Compliance Status: The substitute must maintain ROHS3 compliance and active product status to ensure long-term supply chain viability.

The IXTQ16N50P meets these substitution criteria with the exception of continuous drain current, which is rated at 16A versus the primary part's 19A specification.

Parameter Comparison

Parameter RJL5014DPK-00#T0 (Renesas) IXTQ16N50P (IXYS) Unit
Manufacturer Renesas Electronics Corporation IXYS
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 500 500 V
Continuous Drain Current (Id) @ 25°C 19 (Ta) 16 (Tc) A
Drive Voltage (Max Rds On) 10 10 V
On-State Resistance (Rds On Max) @ 10V 400 @ 9.5A 400 @ 8A mOhm
Gate-Source Voltage (Vgs Max) ±30 ±30 V
Gate Charge (Qg Max) @ 10V 43 43 nC
Input Capacitance (Ciss Max) @ 25V 1700 2250 pF
Power Dissipation (Max) 150 (Tc) 300 (Tc) W
Operating Temperature (TJ) 150 -55 ~ 150 °C
Package Type TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Mounting Type Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Product Status Active Active

Engineering Selection Recommendations

Primary Part Selection: The RJL5014DPK-00#T0 remains the preferred choice for applications requiring the full 19A continuous drain current specification. This device is manufactured by Renesas Electronics Corporation, maintains Active product status, and carries ROHS3 compliance certification. Current inventory of 781 pieces supports immediate procurement.

Substitute Part Selection: The IXTQ16N50P manufactured by IXYS is qualified as a substitute when application circuit design permits operation at 16A continuous drain current. This device maintains identical voltage rating (500V Vdss), gate charge specification (43nC @ 10V), and on-state resistance (400mOhm @ 10V). The IXTQ16N50P offers superior power dissipation capability (300W versus 150W) and extended operating temperature range (-55°C to 150°C). Both devices use the TO-3P through-hole package, ensuring mechanical compatibility. The IXTQ16N50P carries ROHS3 compliance and maintains Active product status. Current inventory of 2100 pieces provides extended supply availability.

Compliance Considerations: Both devices meet ROHS3 compliance requirements and carry Moisture Sensitivity Level 1 (Unlimited) ratings, eliminating moisture-related handling constraints. The RJL5014DPK-00#T0 carries REACH Affected status, while the IXTQ16N50P is REACH Unaffected. Both devices are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Frequently Asked Questions (FAQ)

Q: Can the IXTQ16N50P directly replace the RJL5014DPK-00#T0 in all applications?

A: The IXTQ16N50P is mechanically and electrically compatible with the RJL5014DPK-00#T0 for applications operating at or below 16A continuous drain current. Applications requiring the full 19A specification require circuit-level current derating or selection of the primary part.

Q: What is the primary difference between these two devices?

A: The primary difference is continuous drain current rating: RJL5014DPK-00#T0 is rated for 19A at 25°C, while IXTQ16N50P is rated for 16A at case temperature. Both devices maintain identical voltage rating (500V), gate charge (43nC @ 10V), and on-state resistance (400mOhm @ 10V).

Q: Are both devices available in the same package?

A: Yes. Both devices use the TO-3P through-hole package (TO-3P-3, SC-65-3 designation), ensuring identical mechanical compatibility with existing PCB layouts and thermal management solutions.

Q: What compliance certifications apply to both devices?

A: Both devices carry ROHS3 compliance certification and Moisture Sensitivity Level 1 (Unlimited) ratings. The RJL5014DPK-00#T0 is REACH Affected, while the IXTQ16N50P is REACH Unaffected. Both are classified under ECCN EAR99.

Q: Does the IXTQ16N50P offer any performance advantages?

A: The IXTQ16N50P provides superior power dissipation capability (300W versus 150W) and an extended operating temperature range (-55°C to 150°C versus 150°C maximum). Input capacitance is higher at 2250pF versus 1700pF, which may affect gate drive circuit design.

Q: What inventory status should influence part selection?

A: The RJL5014DPK-00#T0 has 781 pieces in stock, while the IXTQ16N50P has 2100 pieces available. Extended supply availability of the substitute part may support long-term production planning when current derating is acceptable.

Q: Are there any gate drive circuit considerations when substituting?

A: Both devices maintain identical gate charge specifications (43nC @ 10V) and gate-source voltage ratings (±30V), eliminating gate drive circuit modifications. The higher input capacitance of the IXTQ16N50P (2250pF versus 1700pF) may require minor gate drive impedance adjustments in high-frequency switching applications.

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