RJK5026DPP-E0#T2 Equivalent & Substitute Parts

Part Overview

The RJK5026DPP-E0#T2 is an N-Channel MOSFET manufactured by Renesas Electronics Corporation, rated for 500V drain-to-source voltage with 6A continuous drain current at 25°C. This device is packaged in a TO-220FP through-hole configuration and is designed for high-voltage switching applications requiring 28.5W maximum power dissipation.

The RJK5026DPP-E0#T2 carries an Obsolete product status. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET.

Substiute Parts

RJK5026DPP-E0#T2

Renesas Electronics CorporationIn Stock: 973RJK5026DPP-E0#T2 Datasheet

Current PartRFQ

TK6A50D(STA4,Q,M)

Toshiba Semiconductor and StorageIn Stock: 866TK6A50D(STA4,Q,M) Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the RJK5026DPP-E0#T2 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On): 10V
• Vgs (Max): ±30V
• Operating Temperature (TJ): 150°C

Mechanical Equivalence Criteria:

• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack

Compliance Criteria:

• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

The TK6A50D(STA4,Q,M) manufactured by Toshiba Semiconductor and Storage meets all specified electrical and mechanical parameters for direct substitution. This device maintains identical voltage and current ratings, operates within the same temperature range, and is housed in a compatible TO-220-3 Full Pack configuration. Both devices are ROHS3 compliant with MSL Level 1 classification.

Parameter Comparison

Engineering Selection Recommendations

The TK6A50D(STA4,Q,M) is a direct electrical and mechanical substitute for the RJK5026DPP-E0#T2. Both devices are rated for identical voltage and current specifications, operate within the same temperature range, and are housed in compatible TO-220-3 Full Pack through-hole packages.

The TK6A50D(STA4,Q,M) offers the following advantages:

Product Status: The TK6A50D(STA4,Q,M) maintains Active product status, ensuring long-term availability and continued manufacturer support, whereas the RJK5026DPP-E0#T2 is Obsolete.

Compliance: Both devices are ROHS3 compliant and carry MSL Level 1 classification, meeting environmental and moisture sensitivity requirements for industrial and commercial applications.

Performance Characteristics: The TK6A50D(STA4,Q,M) demonstrates improved on-resistance (1.4 Ohm versus 1.7 Ohm at 3A, 10V) and reduced gate charge (11 nC versus 14 nC at 10V), resulting in lower switching losses and improved thermal efficiency. The higher maximum power dissipation rating (35W versus 28.5W) provides additional thermal margin.

Selection of the TK6A50D(STA4,Q,M) is appropriate for applications requiring a 500V, 6A N-Channel MOSFET in a through-hole TO-220-3 configuration with active product support and enhanced performance characteristics.

Frequently Asked Questions (FAQ)

Q: Can the TK6A50D(STA4,Q,M) be used as a direct replacement for the RJK5026DPP-E0#T2?

A: Yes. Both devices are N-Channel MOSFETs with identical 500V drain-to-source voltage ratings, 6A continuous drain current specifications, and ±30V gate voltage limits. Both are housed in TO-220-3 Full Pack through-hole packages and are ROHS3 compliant with MSL Level 1 classification.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are product status and performance characteristics. The TK6A50D(STA4,Q,M) is Active, whereas the RJK5026DPP-E0#T2 is Obsolete. The TK6A50D(STA4,Q,M) exhibits lower on-resistance (1.4 Ohm versus 1.7 Ohm), reduced gate charge (11 nC versus 14 nC), and higher maximum power dissipation (35W versus 28.5W).

Q: Are the package configurations identical?

A: Both devices use TO-220-3 Full Pack through-hole packages. The RJK5026DPP-E0#T2 uses a TO-220FP supplier device package, while the TK6A50D(STA4,Q,M) uses a TO-220SIS supplier device package. Both are mechanically compatible with standard TO-220-3 through-hole PCB footprints.

Q: Do these devices have the same thermal characteristics?

A: Both devices operate at a maximum junction temperature (TJ) of 150°C. The TK6A50D(STA4,Q,M) has a higher maximum power dissipation rating (35W at Tc versus 28.5W at Tc for the RJK5026DPP-E0#T2), providing greater thermal headroom in applications with elevated ambient temperatures or continuous high-current operation.

Q: Are there any compliance or regulatory differences?

A: Both devices are ROHS3 compliant and carry ECCN EAR99 classification with identical HTSUS codes (8541.29.0095). Both have MSL Level 1 (Unlimited) moisture sensitivity ratings. No compliance or regulatory differences exist between these devices.

Q: What is the input capacitance difference, and does it affect circuit design?

A: The TK6A50D(STA4,Q,M) has higher input capacitance (540 pF at 25V versus 440 pF at 25V). This difference may affect gate drive circuit design, particularly in high-frequency switching applications. Gate drive circuits must be evaluated to ensure adequate current sourcing capability for the higher capacitive load.

Q: Is the TK6A50D(STA4,Q,M) available in the same packaging format?

A: The TK6A50D(STA4,Q,M) is supplied in Tube packaging, whereas the RJK5026DPP-E0#T2 packaging format is not specified in the provided data. Both devices are housed in TO-220-3 Full Pack through-hole packages suitable for standard PCB assembly processes.