RJK1002DPN-E0#T2 Equivalent & Substitute Parts

Part Overview

The RJK1002DPN-E0#T2 is an N-Channel MOSFET manufactured by Renesas Electronics Corporation, rated for 100V drain-to-source voltage and 70A continuous drain current in a Through Hole TO-220AB package. This device is classified as Obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. The part delivers 150W maximum power dissipation and operates across a junction temperature range up to 150°C.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	70	A
On-State Resistance (Rds On) @ 35A, 10V	7.6	mOhm
Gate Charge (Qg) @ 10V	94	nC
Input Capacitance (Ciss) @ 10V	6450	pF
Maximum Gate Voltage (Vgs)	±20	V
Power Dissipation (Max)	150	W
Operating Temperature (TJ)	150	°C
Package Type	TO-220AB	—
Mounting Type	Through Hole	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the RJK1002DPN-E0#T2 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 100V
Continuous Drain Current (Id) must equal or exceed 70A
On-State Resistance (Rds On) must be compatible with circuit requirements
Gate Voltage (Vgs) rating must accommodate ±20V operation
Power Dissipation capability must support thermal requirements

Mechanical Compatibility Criteria:

Package type must be TO-220AB or equivalent TO-220-3 footprint
Mounting type must be Through Hole
Pin configuration must match TO-220-3 standard

Regulatory Compliance:

RoHS3 compliance preferred for new designs
REACH compliance status documented

The substitute parts listed below meet these criteria with varying performance characteristics and product status classifications.

Parameter Comparison

Parameter	RJK1002DPN-E0#T2	CSD19531KCS	IPP80N08S406AKSA1	IXTP160N10T	PSMN6R3-120PS	TSM160N10CZ C0G
Manufacturer	Renesas	Texas Instruments	Infineon	IXYS	NXP	Taiwan Semiconductor
Vdss (V)	100	100	80	100	120	100
Id @ 25°C (A)	70	100	80	160	70	160
Rds On @ 10V (mOhm)	7.6 @ 35A	7.7 @ 60A	5.8 @ 80A	7.0 @ 25A	6.7 @ 25A	5.5 @ 30A
Qg @ 10V (nC)	94	38	70	132	207.1	154
Ciss @ Vds (pF)	6450 @ 10V	3870 @ 50V	4800 @ 25V	6600 @ 25V	11384 @ 60V	9840 @ 30V
Vgs Max (V)	±20	±20	±20	±30	±20	±20
Power Dissipation (W)	150	214	150	430	405	300
Operating Temp (°C)	150	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220AB	TO-220-3	PG-TO220-3-1	TO-220-3	TO-220AB	TO-220
Product Status	Obsolete	Active	Last Time Buy	Active	Obsolete	Obsolete
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	RoHS Non-Compliant	ROHS3 Compliant

Engineering Selection Recommendations

CSD19531KCS (Texas Instruments)

This part is the preferred substitute for new designs. It maintains 100V Vdss and exceeds the 70A current requirement at 100A continuous drain current. The device is Active status with full RoHS3 compliance and extended operating temperature range (-55°C to 175°C). Gate charge is significantly lower at 38 nC, reducing switching losses. Input capacitance is reduced to 3870 pF, improving switching performance. Power dissipation capability is increased to 214W, providing thermal margin.

IXTP160N10T (IXYS)

This part is suitable for applications requiring higher current capacity and power dissipation. It maintains 100V Vdss with 160A continuous drain current and 430W power dissipation. The device is Active status with RoHS3 compliance. On-state resistance is 7.0 mOhm at 25A, comparable to the original part. Gate voltage rating extends to ±30V. Higher gate charge (132 nC) and input capacitance (6600 pF) require consideration in switching circuit design.

IPP80N08S406AKSA1 (Infineon)

This part is suitable only for applications where 80V Vdss is acceptable. It provides 80A continuous drain current with superior on-state resistance of 5.8 mOhm at 80A. The device is Last Time Buy status with RoHS3 compliance and automotive qualification (AEC-Q101). Operating temperature range is -55°C to 175°C. Lower gate charge (70 nC) and input capacitance (4800 pF) improve switching efficiency. Vdss rating is reduced by 20V relative to the original part.

PSMN6R3-120PS (NXP)

This part is not recommended for new designs. Although it matches the 70A current requirement and provides higher 120V Vdss rating, it is Obsolete status with RoHS non-compliance. Gate charge is significantly elevated at 207.1 nC, and input capacitance is 11384 pF, both substantially higher than the original part. Power dissipation is 405W, but regulatory compliance issues preclude use in new applications.

TSM160N10CZ C0G (Taiwan Semiconductor)

This part is not recommended for new designs. Although it maintains 100V Vdss with 160A current capacity and 300W power dissipation, it is Obsolete status. Gate charge is elevated at 154 nC, and input capacitance is 9840 pF. RoHS3 compliance is present, but obsolete status limits long-term availability and support.

Frequently Asked Questions (FAQ)

Q: Can the CSD19531KCS directly replace the RJK1002DPN-E0#T2 in existing designs?

A: Yes. Both devices share 100V Vdss rating, compatible gate voltage (±20V), and TO-220-3 package footprint. The CSD19531KCS exceeds the 70A current requirement and provides superior switching characteristics with lower gate charge and input capacitance. Thermal design must accommodate the increased power dissipation capability (214W vs. 150W).

Q: What is the primary limitation of the IPP80N08S406AKSA1 as a substitute?

A: The Vdss rating is 80V, which is 20V lower than the RJK1002DPN-E0#T2. This part is suitable only for applications where the maximum drain-to-source voltage does not exceed 80V. Current capacity (80A) and power dissipation (150W) are adequate for the original design requirements.

Q: Why is the PSMN6R3-120PS not recommended despite matching current specifications?

A: The PSMN6R3-120PS is Obsolete status with RoHS non-compliance, creating regulatory and supply chain risks. Additionally, gate charge (207.1 nC) and input capacitance (11384 pF) are substantially elevated, requiring redesign of gate drive circuits and potentially increasing switching losses.

Q: Are all substitute parts available in the same package footprint?

A: All substitute parts use TO-220-3 or TO-220AB package variants, which share identical Through Hole pin configuration and PCB footprint. Physical dimensions are compatible with standard TO-220 mounting hardware and thermal management solutions.

Q: Which substitute part offers the best switching performance?

A: The CSD19531KCS provides the lowest gate charge (38 nC) and input capacitance (3870 pF), resulting in reduced switching losses and improved switching speed. This characteristic is beneficial in high-frequency switching applications and reduces gate drive power requirements.

Q: Can the IXTP160N10T be used in applications with ±20V gate voltage limits?

A: Yes. Although the IXTP160N10T has a ±30V gate voltage rating, it operates safely within ±20V limits. The higher rating provides additional design margin and does not create compatibility issues with existing gate drive circuits.

Q: What is the significance of the Last Time Buy status for the IPP80N08S406AKSA1?

A: Last Time Buy status indicates that the manufacturer has announced end-of-life production. Existing inventory is available for purchase, but no future production is planned. This status requires careful supply chain planning for long-term production requirements.

Q: How do the operating temperature ranges compare across substitute parts?

A: The RJK1002DPN-E0#T2 operates to 150°C junction temperature. All substitute parts except the original extend to 175°C, providing additional thermal margin. This extended range is beneficial for applications operating near maximum temperature limits.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message