RJK1002DPN-A0#T2 Equivalent & Substitute Parts

Part Overview

The RJK1002DPN-A0#T2 is an N-Channel MOSFET manufactured by Renesas Electronics Corporation, rated for 100V drain-to-source voltage with 70A continuous drain current at 25°C. This device is packaged in TO-220ABA through-hole configuration and is designed for high-current switching applications requiring 150W power dissipation capability.

The RJK1002DPN-A0#T2 carries an Obsolete product status. Locating equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	70	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	7.6 mOhm @ 35A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	4	V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	94	nC @ 10V
Maximum Gate Voltage Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	6450	pF @ 10V
Power Dissipation (Max)	150	W (Ta)
Operating Temperature (Max)	150	°C
Mounting Type	Through Hole	-
Package / Case	TO-220-3	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the RJK1002DPN-A0#T2 are identified based on strict electrical and mechanical compatibility criteria. The following parameters establish the substitution basis:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 100V minimum
FET Type: N-Channel MOSFET technology
Package / Case: TO-220-3 through-hole configuration
Gate Voltage Rating (Vgs Max): ±20V compatibility
Operating Temperature: 150°C minimum rating

Performance Consideration Parameters:

Continuous Drain Current (Id): Equal to or exceeding 70A @ 25°C
On-State Resistance (Rds On): Lower or equivalent values at specified gate voltage
Gate Charge (Qg): Values within acceptable switching performance range
Power Dissipation: Sufficient thermal capability for application requirements

The substitute part TK100E10N1,S1X meets all critical matching parameters and exceeds performance specifications in drain current capacity and power dissipation rating.

Parameter Comparison

Parameter	RJK1002DPN-A0#T2 (Renesas)	TK100E10N1,S1X (Toshiba)	Unit
Manufacturer	Renesas Electronics Corporation	Toshiba Semiconductor and Storage	-
Product Status	Obsolete	Active	-
FET Type	N-Channel	N-Channel	-
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	100	100	V
Continuous Drain Current (Id) @ 25°C	70	100	A (Ta)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	7.6 mOhm @ 35A, 10V	3.4 mOhm @ 50A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	4	4	V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	94	140	nC @ 10V
Maximum Gate Voltage Vgs (Max)	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	6450 pF @ 10V	8800 pF @ 50V	pF
Power Dissipation (Max)	150 W (Ta)	255 W (Tc)	W
Operating Temperature (Max)	150	150	°C (TJ)
Mounting Type	Through Hole	Through Hole	-
Package / Case	TO-220-3	TO-220-3	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	-
ECCN	EAR99	EAR99	-
HTSUS Code	8541.29.0095	8541.29.0095	-

Engineering Selection Recommendations

Primary Substitute: TK100E10N1,S1X

The TK100E10N1,S1X from Toshiba Semiconductor and Storage is a direct substitute for the obsolete RJK1002DPN-A0#T2. Selection rationale is based on the following engineering factors:

Compliance and Regulatory Status: Both devices maintain ROHS3 compliance and carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, ensuring regulatory equivalence for procurement and export documentation.

Electrical Compatibility: The TK100E10N1,S1X maintains identical voltage ratings (100V Vdss, ±20V Vgs) and gate threshold voltage (4V @ 1mA), ensuring direct functional compatibility in existing circuit designs. The substitute part exceeds the original specification in continuous drain current (100A versus 70A) and power dissipation (255W versus 150W), providing enhanced thermal and current-handling margins.

Package and Mounting: Both devices utilize TO-220-3 through-hole packaging, enabling direct mechanical and electrical substitution without PCB redesign or layout modification.

Product Availability: The TK100E10N1,S1X carries Active product status with 2880 pieces in stock, compared to the Obsolete status of the RJK1002DPN-A0#T2 with limited remaining inventory (894 pieces). This availability differential supports long-term supply chain continuity.

On-State Resistance Performance: The TK100E10N1,S1X demonstrates superior on-state resistance characteristics (3.4 mOhm @ 50A, 10V) relative to the RJK1002DPN-A0#T2 (7.6 mOhm @ 35A, 10V), resulting in reduced conduction losses and improved thermal efficiency in switching applications.

Frequently Asked Questions (FAQ)

Q: Can the TK100E10N1,S1X directly replace the RJK1002DPN-A0#T2 without circuit modification?

A: Yes. Both devices share identical voltage ratings (100V Vdss), gate voltage specifications (±20V Vgs), gate threshold voltage (4V @ 1mA), and TO-220-3 package configuration. Direct substitution is electrically and mechanically compatible without circuit redesign.

Q: What are the key differences between these two parts?

A: The primary differences are manufacturer origin (Renesas versus Toshiba), product status (Obsolete versus Active), and performance specifications. The TK100E10N1,S1X provides higher continuous drain current (100A versus 70A), lower on-state resistance (3.4 mOhm versus 7.6 mOhm), and greater power dissipation capability (255W versus 150W). These differences represent performance enhancements rather than incompatibilities.

Q: Are there any thermal management considerations when substituting these parts?

A: The TK100E10N1,S1X exhibits superior thermal performance due to lower on-state resistance and higher power dissipation rating. Existing thermal management solutions designed for the RJK1002DPN-A0#T2 remain adequate for the substitute part. Enhanced thermal performance may reduce cooling requirements in thermally constrained applications.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both the RJK1002DPN-A0#T2 and TK100E10N1,S1X are ROHS3 compliant, carry identical ECCN (EAR99) classification, and share the same HTSUS code (8541.29.0095). Regulatory documentation and export compliance requirements remain unchanged during substitution.

Q: What is the significance of the different gate charge specifications?

A: The TK100E10N1,S1X exhibits higher gate charge (140 nC @ 10V versus 94 nC @ 10V), reflecting its higher current-handling capability. This parameter affects gate drive circuit design and switching speed. Existing gate drive circuits designed for the RJK1002DPN-A0#T2 remain functional with the substitute part; however, switching transient characteristics may differ slightly due to increased gate charge.

Q: Is the higher input capacitance of the TK100E10N1,S1X a concern?

A: The TK100E10N1,S1X demonstrates higher input capacitance (8800 pF @ 50V versus 6450 pF @ 10V), measured at different voltage points. This parameter influences gate drive circuit impedance and switching speed. Existing gate drive designs remain compatible; however, switching frequency response characteristics may exhibit minor variations. Circuit validation is not required for functional compatibility.

Q: What inventory considerations apply to this substitution?

A: The RJK1002DPN-A0#T2 carries Obsolete status with limited remaining inventory (894 pieces). The TK100E10N1,S1X is Active status with substantially higher availability (2880 pieces). For new designs or long-term production requirements, the TK100E10N1,S1X is the recommended selection to ensure supply chain continuity.

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