RJK0703DPP-E0#T2 Equivalent & Substitute Parts

Part Overview

The RJK0703DPP-E0#T2 is an N-Channel MOSFET manufactured by Renesas Electronics Corporation, rated for 75V drain-to-source voltage and 70A continuous drain current in a Through Hole TO-220FP package. This device is classified as obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

RJK0703DPP-E0#T2
Renesas Electronics CorporationIn Stock: 836RJK0703DPP-E0#T2 Datasheet
RJK0703DPP-E0#T2
Current Part
RJK0703DPP-A0#T2
Renesas Electronics CorporationIn Stock: 1155RJK0703DPP-A0#T2 Datasheet
RJK0703DPP-A0#T2
Direct
TK72E08N1,S1X
Toshiba Semiconductor and StorageIn Stock: 1218TK72E08N1,S1X Datasheet
TK72E08N1,S1X
Similar

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 70 A
Rds On (Max) @ Id, Vgs 6.7 mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 4150 pF @ 10V
Power Dissipation (Max) 25 W (Tc)
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the RJK0703DPP-E0#T2 are identified based on electrical and mechanical compatibility within the N-Channel MOSFET category. The substitution logic is determined by the following key parameters:

Critical Matching Parameters:

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 75V minimum
  • Continuous Drain Current (Id): 70A minimum at 25°C
  • Gate-Source Voltage (Vgs): ±20V maximum
  • Mounting Type: Through Hole
  • Package Family: TO-220 series

Acceptable Variation Parameters:

  • Rds On (Max): Equal to or lower than 6.7 mOhm @ 35A, 10V
  • Gate Charge (Qg): Equal to or lower than 56 nC @ 10V
  • Input Capacitance (Ciss): Equal to or lower than 4150 pF @ 10V
  • Power Dissipation: Equal to or higher than 25W

Substitute parts must meet or exceed the electrical performance of the main part while maintaining mechanical compatibility through Through Hole mounting and TO-220 package family standards.

Parameter Comparison

Parameter RJK0703DPP-E0#T2 (Main) RJK0703DPP-A0#T2 (Direct) TK72E08N1,S1X (Similar)
Manufacturer Renesas Electronics Renesas Electronics Toshiba Semiconductor
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Vdss 75 V 75 V 80 V
Id @ 25°C 70 A 70 A 72 A
Rds On (Max) @ Id, Vgs 6.7 mOhm @ 35A, 10V 6.7 mOhm @ 35A, 10V 4.3 mOhm @ 36A, 10V
Gate Charge (Qg) @ Vgs 56 nC @ 10V 56 nC @ 10V 81 nC @ 10V
Vgs (Max) ±20 V ±20 V ±20 V
Input Capacitance (Ciss) (Max) 4150 pF @ 10V 4150 pF @ 10V 5500 pF @ 40V
Power Dissipation (Max) 25 W (Tc) 25 W (Ta) 192 W (Tc)
Operating Temperature 150°C (TJ) 150°C 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 TO-220-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

RJK0703DPP-A0#T2 (Direct Substitute - Renesas Electronics)

The RJK0703DPP-A0#T2 is the primary direct substitute for the obsolete RJK0703DPP-E0#T2. Both devices share identical electrical specifications including Vdss (75V), Id (70A), Rds On (6.7 mOhm), and gate charge (56 nC). The primary difference is product status: RJK0703DPP-A0#T2 is Active, ensuring ongoing availability and supply chain support. Both parts are ROHS3 Compliant and carry MSL 1 (Unlimited) rating. The packaging differs slightly (Tube vs. Full Pack), but both maintain TO-220-3 mechanical compatibility. This part is recommended for direct replacement in existing designs.

TK72E08N1,S1X (Similar Substitute - Toshiba Semiconductor)

The TK72E08N1,S1X is a similar substitute manufactured by Toshiba Semiconductor and Storage. This device exceeds the main part specifications in several parameters: Vdss is rated at 80V (versus 75V), Id is 72A (versus 70A), and power dissipation is significantly higher at 192W (versus 25W). The Rds On is superior at 4.3 mOhm (versus 6.7 mOhm). However, gate charge is higher at 81 nC (versus 56 nC) and input capacitance is higher at 5500 pF (versus 4150 pF). This part is Active status and ROHS3 Compliant. The TK72E08N1,S1X is suitable for applications where higher voltage margin, current capacity, and thermal dissipation are beneficial, though circuit design considerations regarding gate drive and switching characteristics may apply.

Both substitute parts maintain Through Hole mounting and TO-220-3 package family compatibility with the main part.

Frequently Asked Questions (FAQ)

Q: Can RJK0703DPP-A0#T2 be used as a direct replacement for RJK0703DPP-E0#T2?

A: Yes. The RJK0703DPP-A0#T2 is a direct substitute with identical electrical specifications (75V Vdss, 70A Id, 6.7 mOhm Rds On, 56 nC gate charge). Both are N-Channel MOSFETs in TO-220-3 packages with Through Hole mounting. The primary advantage of RJK0703DPP-A0#T2 is Active product status, ensuring supply availability.

Q: What are the key differences between RJK0703DPP-A0#T2 and TK72E08N1,S1X?

A: Both are N-Channel MOSFETs in TO-220-3 Through Hole packages. TK72E08N1,S1X offers higher voltage rating (80V vs. 75V), higher current capacity (72A vs. 70A), superior Rds On (4.3 mOhm vs. 6.7 mOhm), and significantly higher power dissipation (192W vs. 25W). However, TK72E08N1,S1X has higher gate charge (81 nC vs. 56 nC) and input capacitance (5500 pF vs. 4150 pF). Selection depends on application thermal and switching requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. Both RJK0703DPP-A0#T2 and TK72E08N1,S1X are ROHS3 Compliant, matching the compliance status of the main part RJK0703DPP-E0#T2.

Q: Do the substitute parts have the same moisture sensitivity level?

A: Yes. Both substitute parts carry MSL 1 (Unlimited) rating, identical to the main part. This indicates unlimited shelf life under normal storage conditions.

Q: Can TK72E08N1,S1X be used in applications designed for RJK0703DPP-E0#T2?

A: TK72E08N1,S1X meets or exceeds the electrical requirements of RJK0703DPP-E0#T2 in voltage, current, and on-resistance. However, the higher gate charge and input capacitance may affect gate drive circuit performance and switching speed. Circuit validation is necessary to confirm compatibility with existing gate drive designs.

Q: What is the packaging difference between the substitute parts?

A: RJK0703DPP-A0#T2 is supplied in Tube packaging, while RJK0703DPP-E0#T2 is supplied in Full Pack. Both maintain identical TO-220-3 mechanical form factor and Through Hole mounting compatibility. Packaging selection depends on assembly and handling requirements.

Q: Are there any REACH or ECCN differences between the parts?

A: RJK0703DPP-A0#T2 is REACH Unaffected, while RJK0703DPP-E0#T2 is REACH Affected. Both TK72E08N1,S1X and RJK0703DPP-E0#T2 carry ECCN EAR99 classification. Regulatory compliance verification is recommended for specific end-use applications.

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