RGTH80TS65DGC11 Equivalent & Substitute Parts Reference (Transistors, IGBTs)

Part Overview

The RGTH80TS65DGC11 from Rohm Semiconductor is an IGBT (Insulated Gate Bipolar Transistor) in the Trench Field Stop category, supporting 650 V and 70 A, packaged in a TO-247N case for through-hole mounting. The device is rated at a maximum power dissipation of 234 W. The product status is Not For New Designs, making it necessary to identify parametric equivalents that are currently active or available, especially for continued production support or to maintain supply chain reliability.

Substiute Parts

RGTH80TS65DGC11

Rohm SemiconductorIn Stock: 1016RGTH80TS65DGC11 Datasheet

Current PartRFQ

RGTH80TS65DGC13

Rohm SemiconductorIn Stock: 1452RGTH80TS65DGC13 Datasheet

Parametric EquivalentRFQ

RGTH80TS65GC11

Rohm SemiconductorIn Stock: 1262RGTH80TS65GC11 Datasheet

Parametric EquivalentRFQ

RGTH80TS65GC13

Rohm SemiconductorIn Stock: 1651RGTH80TS65GC13 Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution logic is strictly based on alignment of the following electrical, mechanical, and compliance parameters: IGBT Type (Trench Field Stop), Maximum Voltage and Current Ratings (650 V, 70 A), Pulsed Rating (160 A), On-State Voltage Drop, Power Dissipation, Gate Charge, Switching Time, Operating Temperature Range, Mounting Type (Through Hole), Package (TO-247-3), RoHS and REACH compliance, and MSL. Only parts matching all provided parameters are listed as equivalents in this reference.

Parameter Comparison

Engineering Selection Recommendations

The main part number RGTH80TS65DGC11 holds the status Not For New Designs and is ROHS3 Compliant, with MSL 1 (Unlimited) and REACH Unaffected certifications. Substitute part numbers such as RGTH80TS65DGC13 and RGTH80TS65GC13 are Active, maintain identical compliance certifications, and are manufactured within the same product category and electrical/mechanical specifications. All listed substitute parts adhere to the same category, environmental, and regulatory standards.

Frequently Asked Questions (FAQ)

Q1: What key parameters are required for substituting RGTH80TS65DGC11 in the transistors, IGBTs category?
A1: Substitute selection is based on matching IGBT Type, Collector-Emitter Breakdown Voltage (Max), Collector Current (Max), Collector Pulsed Current, On-State Voltage Drop, Power Dissipation, Gate Charge, Switching Time, Operating Temperature Range, Mounting Type, Package/Case, Supplier Device Package, RoHS Status, MSL, and REACH Status.

Q2: Are package variations (TO-247N vs. TO-247G) significant for substitution?
A2: Package form differences such as TO-247N and TO-247G are present among substitutes; both are specified as TO-247-3 package, which ensures compatibility provided strict adherence to the mounting and supplier package guidance.

Q3: Do substitute IGBT models meet the same compliance and certification standards?
A3: All substitute part numbers listed are ROHS3 Compliant, MSL 1 (Unlimited), and REACH Unaffected, matching those of the original part.

Q4: Is there a difference in electrical characteristics among the listed substitute parts?
A4: The given parameters for all substitutes match the main part in core characteristics: voltage, current, power rating, gate charge, and switching times, ensuring parametric equivalence.

Q5: Why is finding substitutes important for RGTH80TS65DGC11?
A5: RGTH80TS65DGC11 is specified as Not For New Designs, necessitating use of active, parametric equivalent models to ensure long-term support and procurement stability.