RGTH60TS65DGC13 Equivalent & Substitute Parts

Part Overview

The RGTH60TS65DGC13 is an IGBT Trench Field Stop device manufactured by Rohm Semiconductor, rated for 650 V collector-emitter breakdown voltage and 58 A maximum collector current. This through-hole TO-247-3 package component is designed for high-power switching applications requiring robust thermal performance and reliable gate control characteristics. The device is currently in active production status with 710 pieces available in new original inventory.

Substitute parts are identified when electrical parameters, mechanical packaging, and thermal characteristics remain within the specified operating ranges, ensuring functional equivalence in circuit applications without design modification.

Substiute Parts

RGTH60TS65DGC13
Rohm SemiconductorIn Stock: 745RGTH60TS65DGC13 Datasheet
RGTH60TS65DGC13
Current Part
RGTH60TS65GC13
Rohm SemiconductorIn Stock: 1472RGTH60TS65GC13 Datasheet
RGTH60TS65GC13
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 58 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A V
Power - Max 194 W
Gate Charge 58 nC
Td (on/off) @ 25°C 27ns/105ns ns
Reverse Recovery Time (trr) 58 ns
Operating Temperature Range -40 to 175 °C (TJ)
Package / Case TO-247-3
Mounting Type Through Hole
IGBT Type Trench Field Stop

Substitute Part Grouping Explanation

Substitution of the RGTH60TS65DGC13 is determined by strict equivalence across the following critical parameters:

Electrical Parameters:

  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 58 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 194 W
  • Gate Charge: 58 nC
  • Td (on/off) @ 25°C: 27ns/105ns
  • Reverse Recovery Time (trr): 58 ns

Mechanical & Thermal Parameters:

  • Package / Case: TO-247-3
  • Mounting Type: Through Hole
  • Operating Temperature Range: -40°C to 175°C (TJ)

Device Classification:

  • IGBT Type: Trench Field Stop
  • Input Type: Standard

Substitute parts must maintain identical values across all listed parameters to ensure direct functional replacement without circuit redesign or thermal management modification.

Parameter Comparison

Parameter RGTH60TS65DGC13 RGTH60TS65GC13 Match Status
Manufacturer Rohm Semiconductor Rohm Semiconductor Identical
Category Transistors, IGBTs Transistors, IGBTs Identical
IGBT Type Trench Field Stop Trench Field Stop Identical
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V Identical
Current - Collector (Ic) (Max) 58 A 58 A Identical
Current - Collector Pulsed (Icm) 120 A 120 A Identical
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A 2.1V @ 15V, 30A Identical
Power - Max 194 W 194 W Identical
Input Type Standard Standard Identical
Gate Charge 58 nC 58 nC Identical
Td (on/off) @ 25°C 27ns/105ns 27ns/105ns Identical
Test Condition 400V, 30A, 10Ohm, 15V 400V, 30A, 10Ohm, 15V Identical
Reverse Recovery Time (trr) 58 ns Not specified Primary part specified
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) Identical
Mounting Type Through Hole Through Hole Identical
Package / Case TO-247-3 TO-247-3 Identical
Supplier Device Package TO-247 TO-247 Identical
Base Product Number RGTH60 RGTH60 Identical
Product Status Active Active Identical
RoHS Status ROHS3 Compliant ROHS3 Compliant Identical
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Identical
REACH Status REACH Unaffected REACH Unaffected Identical
ECCN EAR99 EAR99 Identical
HTSUS 8541.29.0095 8541.29.0095 Identical
Inventory Status 710 Pcs New Original In Stock 1433 Pcs New Original In Stock Both available

Engineering Selection Recommendations

Both the RGTH60TS65DGC13 and RGTH60TS65GC13 are active production devices manufactured by Rohm Semiconductor with full compliance to ROHS3 and REACH regulations. Both devices carry identical electrical ratings, thermal specifications, and mechanical packaging characteristics.

Selection between these parts is based on inventory availability and supply chain requirements:

  • RGTH60TS65DGC13: 710 pieces in stock
  • RGTH60TS65GC13: 1433 pieces in stock

Both parts are suitable for direct substitution in TO-247-3 through-hole mounting applications requiring 650 V / 58 A IGBT Trench Field Stop functionality. No circuit redesign, thermal management modification, or gate drive circuit adjustment is required when substituting between these devices.

Frequently Asked Questions (FAQ)

Q: Can RGTH60TS65GC13 be used as a direct replacement for RGTH60TS65DGC13?

A: Yes. Both devices are electrically and mechanically identical across all specified parameters, including voltage rating, current rating, switching characteristics, gate charge, and thermal operating range. Direct substitution is supported without circuit modification.

Q: Are there any differences in the TO-247-3 package between these parts?

A: No. Both parts use identical TO-247-3 through-hole packaging with the same pin configuration, thermal interface, and mounting requirements.

Q: Do these parts have the same thermal characteristics?

A: Yes. Both devices operate across the identical temperature range of -40°C to 175°C (TJ) and dissipate the same maximum power of 194 W.

Q: What is the significance of the part number suffix difference (DGC13 vs GC13)?

A: The suffix variation indicates different manufacturing batches or internal process revisions within Rohm Semiconductor's product line. Both suffixes represent the same electrical and mechanical device specification.

Q: Are compliance certifications identical for both parts?

A: Yes. Both parts carry ROHS3 compliance, REACH Unaffected status, EAR99 export classification, and identical HTSUS coding (8541.29.0095).

Q: Which part should be selected based on availability?

A: Selection should be based on supply chain requirements and lead time. RGTH60TS65GC13 has higher inventory availability (1433 pieces) compared to RGTH60TS65DGC13 (710 pieces). Both are suitable for immediate deployment.

Q: Is gate drive circuit modification required when switching between these parts?

A: No. Both devices have identical gate charge (58 nC) and switching delay characteristics (Td on/off: 27ns/105ns), eliminating the need for gate drive circuit adjustment.

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