RGP10D Equivalent & Substitute Parts

Part Overview

The RGP10D is a general-purpose rectifier diode manufactured by onsemi, rated for 200 V DC reverse voltage and 1 A average rectified current in a DO-41 through-hole package. This component is classified as "Not For New Designs," indicating it has been superseded in onsemi's product portfolio. Identifying equivalent and substitute parts is necessary for applications requiring continued support, legacy system maintenance, or when the primary part becomes unavailable. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating different package configurations and manufacturer sourcing options.

Key Parameters

Parameter	RGP10D Value	Unit	Criticality for Substitution
Voltage - DC Reverse (Vr) (Max)	200	V	Critical
Current - Average Rectified (Io)	1	A	Critical
Voltage - Forward (Vf) (Max) @ If	1.3 @ 1 A	V	Important
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	-	Important
Reverse Recovery Time (trr)	150	ns	Important
Current - Reverse Leakage @ Vr	5	µA @ 200 V	Important
Operating Temperature - Junction	-65 to 175	°C	Important
Mounting Type	Through Hole	-	Critical
Package / Case	DO-204AL, DO-41, Axial	-	Critical
RoHS Status	ROHS3 Compliant	-	Important

Substitute Part Grouping Explanation

Substitution logic for the RGP10D is based on strict electrical and mechanical parameter matching. All substitute parts must satisfy the following criteria:

Critical Parameters (Must Match or Exceed):

Voltage - DC Reverse (Vr): Minimum 200 V
Current - Average Rectified (Io): Minimum 1 A
Mounting Type: Through Hole
Package compatibility: DO-41, DO-204AL, or Axial configurations

Important Parameters (Should Match or Be Superior):

Voltage - Forward (Vf): ≤ 1.3 V @ 1 A (lower is acceptable)
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr): ≤ 150 ns (lower is acceptable)
Current - Reverse Leakage @ Vr: ≤ 5 µA @ 200 V (lower is acceptable)
Operating Temperature Range: Must encompass or exceed -65°C to 175°C
RoHS Compliance: ROHS3 Compliant preferred

Substitute parts are grouped into two categories: Direct Equivalents (identical electrical and thermal specifications with active product status) and Similar Alternatives (matching core electrical parameters with acceptable variations in secondary characteristics or different product status).

Parameter Comparison

Part Number	Manufacturer	Vr (Max) V	Io (A)	Vf (Max) @ 1A (V)	trr (ns)	Ir @ Vr (µA)	Tj (°C)	Package	Product Status
RGP10D	onsemi	200	1	1.3	150	5	-65 to 175	DO-41	Not For New Designs
RGP10D-E3/54	Vishay	200	1	1.3	150	5	-65 to 175	DO-204AL (DO-41)	Active
RGP10DE-E3/54	Vishay	200	1	1.3	150	5	-65 to 175	DO-204AL (DO-41)	Active
BYD33DGPHE3/54	Vishay	200	1	1.3	150	5	-65 to 175	DO-204AL (DO-41)	Active
1N4935-T	Diodes Incorporated	200	1	1.2	200	5	-65 to 150	DO-41	Active
1N4935G-T	Diodes Incorporated	200	1	1.2	200	5	-65 to 150	DO-41	Active
1N4935G	Taiwan Semiconductor Corporation	200	1	1.2	200	5	-55 to 150	DO-204AL (DO-41)	Active
1N4935RLG	onsemi	200	1	1.2	300	5	-65 to 150	Axial	Not For New Designs
1N4935GP-BP	Micro Commercial Co	200	1	1.3	200	5	-55 to 150	DO-41	Active
1N4935GP-AP	Micro Commercial Co	200	1	1.2	200	5	-55 to 150	DO-41	Active
1N3611	Microchip Technology	200	1	1.1	-	1	-65 to 175	Axial	Active

Engineering Selection Recommendations

Direct Equivalents (Preferred for RGP10D Replacement):

The following parts provide identical electrical and thermal performance to the RGP10D with active product status:

RGP10D-E3/54 (Vishay): Maintains all RGP10D specifications including 150 ns reverse recovery time and -65°C to 175°C operating range. Active product status ensures long-term availability. Supplied in DO-204AL (DO-41) package with Cut Tape packaging.
RGP10DE-E3/54 (Vishay): Functionally equivalent to RGP10D-E3/54 with identical electrical parameters. Supplied in Tape & Reel packaging for automated assembly applications.
BYD33DGPHE3/54 (Vishay): Matches RGP10D specifications exactly. Active product status with full compliance certifications. Suitable for direct substitution in existing designs.

Active Alternatives (Acceptable for New Applications):

1N4935-T (Diodes Incorporated): Meets all critical electrical parameters. Forward voltage reduced to 1.2 V @ 1 A. Reverse recovery time increased to 200 ns (acceptable for most applications). Operating temperature range -65°C to 150°C (5°C reduction at upper limit). Active product status with ROHS3 compliance.
1N4935G-T (Diodes Incorporated): Equivalent to 1N4935-T with Tape & Reel packaging. Suitable for high-volume automated assembly.
1N4935GP-BP (Micro Commercial Co): Maintains 1.3 V forward voltage matching RGP10D. Reverse recovery time 200 ns. Operating range -55°C to 150°C. Active status with ROHS3 compliance.

Conditional Alternatives (Application-Dependent):

1N4935G (Taiwan Semiconductor Corporation): Meets electrical requirements with 1.2 V forward voltage. Operating temperature range -55°C to 150°C (reduced low-temperature capability). Active product status. Suitable for applications not requiring full -65°C lower limit.
1N3611 (Microchip Technology): Provides superior reverse leakage (1 µA vs. 5 µA) and lower forward voltage (1.1 V). Standard recovery speed (>500ns) instead of fast recovery. Axial package configuration. RoHS non-compliant. Suitable only for legacy applications where RoHS compliance is not required.
1N4935RLG (onsemi): Maintains onsemi sourcing continuity. Axial package configuration. Reverse recovery time 300 ns (acceptable for lower-frequency applications). Not For New Designs status. Suitable for legacy system maintenance only.

Compliance Considerations:

All recommended direct equivalents and active alternatives maintain ROHS3 compliance and REACH Unaffected status, matching the RGP10D regulatory profile. The 1N3611 is RoHS non-compliant and should be avoided in applications requiring regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can I substitute RGP10D with 1N4935-T in my existing circuit?

A: Yes. The 1N4935-T meets all critical electrical parameters: 200 V reverse voltage, 1 A average rectified current, and fast recovery speed. The forward voltage is reduced to 1.2 V (beneficial), and reverse recovery time is 200 ns (acceptable for most rectification applications). Operating temperature range is -65°C to 150°C, which covers most industrial applications. Verify your circuit does not require operation above 150°C.

Q: What is the difference between RGP10D-E3/54 and RGP10DE-E3/54?

A: Both parts are electrically and thermally identical to the RGP10D. The primary difference is packaging: RGP10D-E3/54 is supplied in Cut Tape (CT), while RGP10DE-E3/54 is supplied in Tape & Reel (TR). Choose Cut Tape for manual assembly or small-quantity applications. Choose Tape & Reel for automated pick-and-place assembly or high-volume production.

Q: Why is the 1N3611 listed as a substitute if it has different recovery characteristics?

A: The 1N3611 meets the critical electrical parameters (200 V, 1 A) and operating temperature range (-65°C to 175°C). However, it uses standard recovery speed (>500ns) instead of fast recovery (≤500ns). This makes it suitable only for low-frequency rectification applications where switching speed is not critical. It is not recommended for high-frequency or switching applications. Additionally, the 1N3611 is RoHS non-compliant, restricting its use in regulated industries.

Q: Can I use 1N4935RLG as a direct replacement for RGP10D?

A: The 1N4935RLG is electrically compatible (200 V, 1 A, fast recovery) but has two limitations: (1) Axial package configuration differs from the RGP10D's DO-41 package, requiring PCB layout modification; (2) Product status is "Not For New Designs," indicating limited future availability. Use 1N4935RLG only for legacy system maintenance where the axial package is already established. For new designs or upgrades, select an active product such as RGP10D-E3/54 or 1N4935-T.

Q: What does "Fast Recovery ≤ 500ns, > 200mA (Io)" mean?

A: This specification indicates the diode is classified as a fast recovery rectifier with reverse recovery time not exceeding 500 nanoseconds when conducting currents greater than 200 milliamps. The RGP10D achieves 150 ns, which is superior to the 500 ns limit. Fast recovery diodes are suitable for switching power supplies and high-frequency rectification. Standard recovery diodes (>500ns) are limited to low-frequency applications.

Q: Are all substitute parts ROHS3 compliant?

A: No. The 1N3611 is RoHS non-compliant. All other listed substitutes (RGP10D-E3/54, RGP10DE-E3/54, BYD33DGPHE3/54, 1N4935-T, 1N4935G-T, 1N4935G, 1N4935RLG, 1N4935GP-BP, 1N4935GP-AP) are ROHS3 compliant. Verify RoHS compliance requirements for your application before selecting a substitute.

Q: What is the difference between DO-41 and DO-204AL packages?

A: DO-41 and DO-204AL are equivalent package designations for the same through-hole axial lead diode form factor. DO-41 is the older designation; DO-204AL is the standardized IEC designation. Both refer to identical physical dimensions and lead spacing. Parts specified as "DO-204AL (DO-41)" or "DO-41" are mechanically interchangeable.

Q: Why does the RGP10D have "Not For New Designs" status?

A: This status indicates onsemi has superseded the RGP10D in their product portfolio. The part remains available for existing applications but is not recommended for new circuit designs. Equivalent active alternatives such as RGP10D-E3/54 (also from Vishay, which acquired onsemi's diode business) or 1N4935-T provide identical or superior performance with active product status and guaranteed long-term availability.

Q: Can I mix different substitute parts in the same circuit?

A: Yes, provided all selected parts meet the circuit's electrical requirements. However, for consistency and simplified inventory management, use a single substitute part number throughout the design. If mixing is necessary, verify that forward voltage differences (ranging from 1.1 V to 1.3 V across substitutes) do not affect circuit performance, particularly in precision rectification or voltage reference applications.

Q: What is the significance of reverse leakage current (Ir)?

A: Reverse leakage current is the small current flowing through the diode when reverse-biased. The RGP10D specifies 5 µA @ 200 V. Lower leakage is beneficial for precision applications and high-impedance circuits. The 1N3611 offers superior 1 µA leakage, while all other substitutes match the 5 µA specification. For most general-purpose rectification, 5 µA leakage is acceptable.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message