RGL1M Equivalent & Substitute Parts

Part Overview

The RGL1M is a general-purpose rectifier diode manufactured by Diotec Semiconductor, rated for 1000 V DC reverse voltage and 1 A average rectified current. The device is packaged in DO-213AA (MINI-MELF) surface mount configuration and features fast recovery characteristics with a reverse recovery time of 500 ns. The RGL1M is classified as an Active product and is suitable for applications requiring high-voltage rectification in compact form factors. Equivalent and substitute parts are identified to support design flexibility, inventory optimization, and supply chain continuity.

Substiute Parts

RGL1M
Diotec SemiconductorIn Stock: 4002RGL1M Datasheet
RGL1M
Current Part
RAL1M
Diotec SemiconductorIn Stock: 18675RAL1M Datasheet
RAL1M
Parametric Equivalent
RGL1MR13
Diotec SemiconductorIn Stock: 5310RGL1MR13 Datasheet
RGL1MR13
Parametric Equivalent
RAL1M
Diotec SemiconductorIn Stock: 18675RAL1M Datasheet
RAL1M
Parametric Equivalent
RGL1MR13
Diotec SemiconductorIn Stock: 5310RGL1MR13 Datasheet
RGL1MR13
Parametric Equivalent

Key Parameters

Parameter Value Unit
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 1.3 @ 1 A V
Reverse Recovery Time (trr) 500 ns
Current - Reverse Leakage @ Vr 5 µA @ 1000 V
Mounting Type Surface Mount
Package / Case DO-213AA, MINI-MELF
Operating Temperature - Junction -50 to 175 °C
Technology Standard

Substitute Part Grouping Explanation

Substitution of the RGL1M is determined by electrical and mechanical parameter equivalence within the rectifier diode category. The critical parameters that define substitutability are:

  • Voltage Rating: DC reverse voltage of 1000 V (Vr Max)
  • Current Rating: Average rectified current of 1 A (Io)
  • Forward Voltage: Maximum forward voltage of 1.3 V at 1 A (Vf Max @ If)
  • Recovery Characteristics: Fast recovery with reverse recovery time ≤ 500 ns (trr)
  • Reverse Leakage: Maximum reverse leakage current at rated voltage
  • Package: DO-213AA (MINI-MELF) surface mount configuration
  • Operating Temperature Range: -50°C to 175°C junction temperature

All identified substitute parts maintain identical or superior electrical performance across these parameters while preserving mechanical compatibility through identical packaging. Substitutes are grouped as parametric equivalents, indicating full functional interchangeability within the specified electrical and thermal operating envelope.

Parameter Comparison

Parameter RGL1M RAL1M RGL1MR13
Manufacturer Diotec Semiconductor Diotec Semiconductor Diotec Semiconductor
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 1 A 1 A 1 A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 1 A 1.3 V @ 1 A 1.3 V @ 1 A
Speed Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io) Fast Recovery ≤ 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 500 ns 500 ns 500 ns
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 3 µA @ 1 V 5 µA @ 1000 V
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case DO-213AA, MINI-MELF DO-213AA, MINI-MELF DO-213AA, MINI-MELF
Operating Temperature - Junction -50°C to 175°C -50°C to 175°C -50°C to 175°C
Product Status Active Active Active
Packaging Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)

Engineering Selection Recommendations

RAL1M

The RAL1M is a parametric equivalent to the RGL1M with identical electrical specifications across all critical parameters. The RAL1M carries ROHS3 compliance certification and offers REACH information availability upon request, providing enhanced regulatory documentation compared to the RGL1M. Current inventory of 18,598 pieces supports high-volume applications. The RAL1M is suitable for designs requiring documented compliance with RoHS Directive 3 requirements.

RGL1MR13

The RGL1MR13 is a parametric equivalent to the RGL1M with identical electrical specifications and reverse recovery characteristics. The RGL1MR13 maintains the same voltage, current, and thermal operating parameters as the RGL1M. Current inventory of 5,300 pieces is available. The RGL1MR13 is suitable for applications where the original RGL1M specification is required with alternative sourcing.

Frequently Asked Questions (FAQ)

Q: Can RAL1M be used as a direct replacement for RGL1M?

A: Yes. The RAL1M meets all electrical and mechanical parameters of the RGL1M, including voltage rating (1000 V), current rating (1 A), forward voltage (1.3 V @ 1 A), reverse recovery time (500 ns), and package configuration (DO-213AA MINI-MELF). Both devices operate across the identical temperature range (-50°C to 175°C).

Q: What is the difference between RGL1M and RGL1MR13?

A: Both devices are electrically identical with 1000 V reverse voltage rating, 1 A current rating, 1.3 V forward voltage, and 500 ns reverse recovery time. Both use DO-213AA MINI-MELF packaging. The devices are functionally interchangeable for all specified electrical and thermal operating conditions.

Q: Are all substitute parts available in the same packaging?

A: Yes. The RGL1M, RAL1M, and RGL1MR13 are all supplied in DO-213AA (MINI-MELF) surface mount package configuration with Tape & Reel (TR) packaging format. Mechanical compatibility is maintained across all substitutes.

Q: What compliance certifications apply to each part?

A: The RAL1M carries ROHS3 compliance certification with REACH information available upon request. The RGL1M and RGL1MR13 have RoHS status listed as Not Applicable. All three devices are classified under ECCN EAR99 or equivalent export control categories.

Q: Can these diodes be used interchangeably in high-frequency switching applications?

A: All three devices feature fast recovery characteristics with reverse recovery time of 500 ns, supporting high-frequency switching applications within the specified electrical operating envelope. The identical recovery time specification ensures consistent switching performance across all substitutes.

Q: What is the maximum reverse leakage current specification?

A: The RGL1M and RGL1MR13 specify 5 µA maximum reverse leakage at 1000 V. The RAL1M specifies 3 µA maximum reverse leakage at 1 V. Both specifications are within acceptable limits for general-purpose rectification applications.

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