RFP30N06LE Equivalent & Substitute Parts

Part Overview

The RFP30N06LE is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 30A continuous drain current in a Through Hole TO-220-3 package. This device is classified as Obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement requirements. The part delivers 96W maximum power dissipation and operates across the temperature range of -55°C to 175°C.

Substiute Parts

RFP30N06LE

onsemiIn Stock: 15283RFP30N06LE Datasheet

Current PartRFQ

HUF76423P3

onsemiIn Stock: 1435HUF76423P3 Datasheet

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STP36NF06L

STMicroelectronicsIn Stock: 1344STP36NF06L Datasheet

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STP55NF06

STMicroelectronicsIn Stock: 155444STP55NF06 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the RFP30N06LE is determined by the following critical parameters:

Mandatory Matching Criteria:

• Drain to Source Voltage (Vdss): 60V minimum
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Package Type: TO-220-3 Through Hole
• Operating Temperature Range: -55°C to 175°C

Performance Compatibility Criteria:

• Continuous Drain Current (Id): Equal to or greater than 30A
• Rds On (Max): Equal to or lower than 47mOhm (at rated conditions)
• Gate Threshold Voltage (Vgs(th)): Within acceptable gate drive voltage range
• Power Dissipation: Sufficient for application requirements

The three substitute parts identified—HUF76423P3, STP36NF06L, and STP55NF06—satisfy all mandatory matching criteria and provide equivalent or superior electrical performance characteristics within the specified parameter ranges.

Parameter Comparison

Engineering Selection Recommendations

HUF76423P3 (onsemi UltraFET™ Series)

The HUF76423P3 is an Active product from onsemi, the original manufacturer of the RFP30N06LE. This substitute provides superior electrical performance with 35A continuous drain current, lower on-resistance (30mOhm), and reduced gate charge (34nC). The part maintains identical voltage ratings and operating temperature range. The HUF76423P3 is suitable for direct replacement in applications where the enhanced current capability and reduced switching losses are beneficial. REACH compliance is confirmed.

STP36NF06L (STMicroelectronics STripFET™ II Series)

The STP36NF06L is an Active product offering matched drain current (30A) to the RFP30N06LE with improved on-resistance (40mOhm) and significantly lower gate charge (17nC). This part is RoHS3 compliant and REACH unaffected. The reduced input capacitance (660pF) and lower gate charge make this substitute advantageous for applications with limited gate drive capability or where switching frequency optimization is required.

STP55NF06 (STMicroelectronics STripFET™ II Series)

The STP55NF06 is an Active product with the highest current rating (50A) and lowest on-resistance (18mOhm) among the substitutes. This part delivers superior thermal performance with 110W power dissipation capability. The STP55NF06 is RoHS3 compliant and REACH unaffected. This substitute is appropriate for applications requiring higher current capacity or where thermal margin enhancement is necessary.

All three substitutes maintain the mandatory 60V Vdss rating, N-Channel configuration, MOSFET technology, TO-220-3 package, and -55°C to 175°C operating temperature range. Selection among these substitutes depends on specific application requirements for current capacity, on-resistance, switching characteristics, and thermal management.

Frequently Asked Questions (FAQ)

Q: Can the HUF76423P3 be used as a direct replacement for the RFP30N06LE?

A: Yes. The HUF76423P3 maintains identical voltage ratings (60V Vdss), package type (TO-220-3), and operating temperature range (-55°C to 175°C). The higher current rating (35A vs. 30A) and lower on-resistance (30mOhm vs. 47mOhm) provide equivalent or superior performance in the same footprint.

Q: What is the primary difference between the STP36NF06L and STP55NF06?

A: Both are STMicroelectronics STripFET™ II series devices with identical voltage ratings and package type. The STP55NF06 provides higher current capacity (50A vs. 30A), lower on-resistance (18mOhm vs. 40mOhm), and greater power dissipation capability (110W vs. 70W). The STP36NF06L is suitable for applications matching the original 30A specification, while the STP55NF06 is appropriate for higher current or thermal margin requirements.

Q: Are all substitute parts RoHS compliant?

A: The STP36NF06L and STP55NF06 are explicitly RoHS3 compliant. The HUF76423P3 RoHS status is not specified in the provided data. All three parts are REACH unaffected.

Q: Does the gate charge difference affect circuit design?

A: Yes. The substitute parts exhibit different gate charge values: HUF76423P3 (34nC), STP36NF06L (17nC), and STP55NF06 (60nC). Lower gate charge reduces gate drive power requirements and enables faster switching transitions. Applications with limited gate drive capability may benefit from the STP36NF06L. Designs with existing gate drive circuits rated for higher charge may use any substitute without modification.

Q: Can these substitutes be used interchangeably in the same circuit?

A: All substitutes share the same package type (TO-220-3) and voltage ratings (60V Vdss). However, differences in on-resistance, gate charge, and current ratings may affect circuit performance. The STP36NF06L provides the closest electrical match to the RFP30N06LE at the 30A specification level. The HUF76423P3 and STP55NF06 offer enhanced performance characteristics suitable for applications requiring higher current capacity or improved thermal performance.

Q: What is the inventory status of these substitutes?

A: HUF76423P3 has 1410 units in stock. STP36NF06L has 1308 units in stock. STP55NF06 has 155400 units in stock. The RFP30N06LE (Obsolete) has 15265 units in stock.