RFP2N10L MOSFET N-Channel 100V 2A Equivalent & Substitute Parts

Part Overview

The RFP2N10L is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage and 2A continuous drain current in a Through Hole TO-220-3 package. This device is classified as obsolete product status. Identification of equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs, repairs, and legacy system support.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	2	A
Drive Voltage (Max Rds On)	5	V
Rds On (Max) @ Id, Vgs	1.05	Ohm @ 2A, 5V
Vgs(th) (Max) @ Id	2	V @ 250µA
Vgs (Max)	±10	V
Input Capacitance (Ciss) (Max) @ Vds	200	pF @ 25V
Power Dissipation (Max)	25	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the RFP2N10L is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 100V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Gate Threshold Voltage (Vgs(th)): Must be compatible at specified test conditions
Gate Voltage Range (Vgs): Must accommodate ±10V maximum
Operating Temperature Range: Must span -55°C to 150°C

Mechanical Compatibility Criteria:

Package Type: Must be TO-220-3 Through Hole
Mounting Type: Must be Through Hole

Current and Power Considerations: Substitute parts may exceed the continuous drain current (Id) and power dissipation (Pd) ratings of the RFP2N10L, as higher ratings provide design margin and are electrically compatible in applications requiring 2A or less.

The RFP12N10L meets all substitution criteria and is listed as an active product with enhanced electrical specifications.

Parameter Comparison

Parameter	RFP2N10L	RFP12N10L	Unit
Manufacturer	onsemi	onsemi
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100	100	V
Continuous Drain Current (Id) @ 25°C	2	12	A
Drive Voltage (Max Rds On)	5	5	V
Rds On (Max) @ Id, Vgs	1.05 @ 2A, 5V	0.2 @ 12A, 5V	Ohm
Vgs(th) (Max) @ Id	2 @ 250µA	2 @ 250µA	V
Vgs (Max)	±10	±10	V
Input Capacitance (Ciss) (Max) @ Vds	200 @ 25V	900 @ 25V	pF
Power Dissipation (Max)	25	60	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Package Type	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole
Product Status	Obsolete	Active

Engineering Selection Recommendations

RFP12N10L as Primary Substitute:

The RFP12N10L is the direct substitute for the RFP2N10L based on the following engineering criteria:

Electrical Compatibility: Both devices share identical Vdss (100V), Vgs(th) (2V @ 250µA), Vgs maximum (±10V), and drive voltage specifications (5V). The RFP12N10L exceeds the continuous drain current and power dissipation ratings, providing design margin for applications operating at or below 2A.
Package and Mounting: Both devices utilize the TO-220-3 Through Hole package, ensuring mechanical and thermal interface compatibility without PCB redesign.
Product Status and Compliance: The RFP12N10L carries Active product status and RoHS3 compliance, whereas the RFP2N10L is Obsolete and RoHS non-compliant. Selection of the RFP12N10L ensures long-term component availability and regulatory compliance for new designs and production runs.
Thermal Performance: The RFP12N10L provides superior thermal characteristics with 60W maximum power dissipation compared to 25W for the RFP2N10L, supporting higher reliability margins in thermal management.
Operating Temperature: Both devices operate across the identical temperature range of -55°C to 150°C, ensuring functional equivalence across environmental conditions.

Frequently Asked Questions (FAQ)

Q: Can the RFP12N10L directly replace the RFP2N10L in existing designs?

A: Yes. The RFP12N10L is electrically and mechanically compatible with the RFP2N10L. Both devices share identical voltage ratings (Vdss = 100V), gate threshold voltage (Vgs(th) = 2V @ 250µA), gate voltage range (±10V), and package type (TO-220-3 Through Hole). The RFP12N10L exceeds the current and power ratings of the RFP2N10L, providing design margin without circuit modification.

Q: What are the key differences between RFP2N10L and RFP12N10L?

A: The primary differences are continuous drain current (2A versus 12A), power dissipation (25W versus 60W), on-resistance (1.05 Ohm versus 0.2 Ohm at rated conditions), and input capacitance (200 pF versus 900 pF). The RFP12N10L also carries Active product status and RoHS3 compliance, whereas the RFP2N10L is Obsolete and RoHS non-compliant.

Q: Are there thermal considerations when substituting the RFP12N10L for the RFP2N10L?

A: Both devices use the TO-220-3 package with identical thermal interfaces. The RFP12N10L provides higher power dissipation capability (60W versus 25W), which may reduce junction temperature in applications operating at 2A or less. Thermal design remains compatible without modification.

Q: Does the RFP12N10L require different gate drive circuitry?

A: No. Both devices share identical drive voltage specifications (5V for maximum Rds On) and gate voltage range (±10V maximum). Existing gate drive circuits designed for the RFP2N10L are directly compatible with the RFP12N10L.

Q: What is the impact of higher input capacitance in the RFP12N10L?

A: The RFP12N10L exhibits higher input capacitance (900 pF versus 200 pF at 25V). This may increase gate charge and switching time in high-frequency applications. Circuit performance should be evaluated if switching frequency exceeds design specifications for the original RFP2N10L.

Q: Is the RFP12N10L suitable for new product designs?

A: Yes. The RFP12N10L carries Active product status and RoHS3 compliance, making it suitable for new designs. The RFP2N10L is Obsolete and should not be specified for new products. The RFP12N10L provides superior long-term availability and regulatory compliance.

Q: Can the RFP2N10L be used as a substitute for the RFP12N10L?

A: No. The RFP2N10L has lower continuous drain current (2A versus 12A) and power dissipation (25W versus 60W) ratings. Applications requiring the full 12A capability of the RFP12N10L cannot use the RFP2N10L as a substitute.

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