RFP15P05 P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The RFP15P05 is a P-Channel MOSFET manufactured by onsemi, rated for 50V drain-to-source voltage and 15A continuous drain current in a TO-220-3 through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. The RFP15P05 operates across a temperature range of -55°C to 175°C and dissipates up to 80W at the case temperature.

Substiute Parts

RFP15P05
onsemiIn Stock: 1528RFP15P05 Datasheet
RFP15P05
Current Part
FQP17P06
onsemiIn Stock: 15412FQP17P06 Datasheet
FQP17P06
Similar
IRF9Z34NPBF
Infineon TechnologiesIn Stock: 65385IRF9Z34NPBF Datasheet
IRF9Z34NPBF
Similar
IRF9Z34PBF
Vishay SiliconixIn Stock: 5343IRF9Z34PBF Datasheet
IRF9Z34PBF
Similar
SPP18P06PHXKSA1
Infineon TechnologiesIn Stock: 1893SPP18P06PHXKSA1 Datasheet
SPP18P06PHXKSA1
Similar

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 50 V
Continuous Drain Current (Id) @ 25°C 15 A
On-Resistance (Rds On) @ 15A, 10V 150 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 20V 150 nC
Power Dissipation (Max) 80 W
Operating Temperature Range -55 to 175 °C
Package Type TO-220-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the RFP15P05 is determined by the following critical parameters:

Electrical Compatibility Requirements:

  • FET Type: P-Channel (all substitutes must be P-Channel)
  • Drain to Source Voltage (Vdss): Must equal or exceed 50V
  • Continuous Drain Current (Id): Must equal or exceed 15A
  • Gate Threshold Voltage (Vgs(th)): Must be compatible at 4V nominal
  • Maximum Gate Voltage (Vgs Max): Must accommodate ±20V operation
  • Operating Temperature Range: Must span -55°C to 175°C

Mechanical Compatibility Requirements:

  • Package Type: TO-220-3 or TO-220AB (compatible pinout)
  • Mounting Type: Through Hole

Substitution Logic: All four substitute parts meet or exceed the electrical specifications of the RFP15P05. Each substitute provides equal or superior voltage ratings, current handling, and thermal performance. The substitutes are grouped as direct functional equivalents based on their ability to operate within the same application parameters while maintaining electrical and thermal margins.

Parameter Comparison

Parameter RFP15P05 FQP17P06 IRF9Z34NPBF IRF9Z34PBF SPP18P06PHXKSA1
Manufacturer onsemi onsemi Infineon Technologies Vishay Siliconix Infineon Technologies
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel
Vdss (V) 50 60 55 60 60
Id @ 25°C (A) 15 17 19 18 18.7
Rds On (mOhm) 150 @ 15A, 10V 120 @ 8.5A, 10V 100 @ 10A, 10V 140 @ 11A, 10V 130 @ 13.2A, 10V
Vgs(th) @ 250µA (V) 4 4 4 4 4
Vgs Max (V) ±20 ±25 ±20 ±20 ±20
Gate Charge @ 10V (nC) 150 @ 20V 27 @ 10V 35 @ 10V 34 @ 10V 28 @ 10V
Power Dissipation (W) 80 79 68 88 81.1
Operating Temperature (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-220-3 TO-220-3 TO-220AB TO-220AB TO-220-3
Product Status Obsolete Active Active Active Active
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

FQP17P06 (onsemi): This substitute maintains onsemi as the manufacturer while providing active product status. It offers 60V Vdss and 17A continuous drain current, exceeding RFP15P05 specifications. The FQP17P06 is ROHS3 compliant and available in high inventory (15,306 pcs). The TO-220-3 package provides direct mechanical compatibility. This option is suitable for applications requiring onsemi continuity and RoHS compliance.

IRF9Z34NPBF (Infineon Technologies): This substitute provides the lowest on-resistance (100 mOhm) among all options and the highest continuous drain current (19A). The IRF9Z34NPBF is ROHS3 compliant and maintains active product status with substantial inventory availability (65,300 pcs). The TO-220AB package is mechanically compatible with TO-220-3 applications. This option delivers superior electrical performance and thermal efficiency.

IRF9Z34PBF (Vishay Siliconix): This substitute offers 60V Vdss and 18A continuous drain current with ROHS3 compliance and active product status. The IRF9Z34PBF provides 88W power dissipation, the highest among substitutes. The TO-220AB package is mechanically compatible. This option is suitable for applications with higher thermal requirements. Note: REACH Status is listed as REACH Affected.

SPP18P06PHXKSA1 (Infineon Technologies): This substitute provides 60V Vdss and 18.7A continuous drain current with ROHS3 compliance and active product status. The SPP18P06PHXKSA1 features the lowest gate charge (28 nC @ 10V) among substitutes, enabling faster switching performance. The TO-220-3 package provides direct mechanical compatibility. This option is optimal for applications prioritizing switching speed and gate drive efficiency.

Frequently Asked Questions (FAQ)

Q: Can the RFP15P05 be directly replaced with any of these substitutes?

A: Yes. All four substitute parts meet or exceed the electrical specifications of the RFP15P05. Each substitute maintains P-Channel configuration, supports the required voltage and current ratings, and operates across the same temperature range. Mechanical compatibility is confirmed through TO-220-3 or TO-220AB packaging.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: Both packages are through-hole mounted with compatible pinouts for P-Channel MOSFETs. TO-220-3 and TO-220AB are mechanically and electrically interchangeable in standard applications. The primary difference is in the lead frame design, which does not affect electrical performance in typical circuit implementations.

Q: Why do the substitute parts have lower gate charge values than the RFP15P05?

A: Gate charge (Qg) is measured at different voltage levels across the parts. The RFP15P05 specifies Qg at 20V, while most substitutes specify Qg at 10V. Lower gate charge at the same voltage indicates improved switching performance and reduced gate drive power requirements. This represents an advancement in MOSFET technology.

Q: Which substitute offers the best thermal performance?

A: The IRF9Z34PBF provides the highest power dissipation rating at 88W. However, thermal performance in actual applications depends on circuit design, heat sinking, and duty cycle. The IRF9Z34NPBF offers the lowest on-resistance (100 mOhm), which reduces resistive heating during conduction.

Q: Are all substitutes RoHS compliant?

A: Yes. All four substitute parts are ROHS3 compliant. The RFP15P05 is RoHS non-compliant, making these substitutes necessary for applications requiring RoHS compliance.

Q: What is the significance of product status being "Active" versus "Obsolete"?

A: Active product status indicates ongoing manufacturing and availability from the manufacturer. Obsolete status means the RFP15P05 is no longer manufactured and existing inventory is limited. All substitutes maintain active status, ensuring long-term availability and supply chain reliability.

Q: Can I use these substitutes in existing designs without circuit modifications?

A: Yes. All substitutes are pin-compatible and electrically compatible with the RFP15P05. The higher voltage ratings and current capabilities of the substitutes provide design margin without requiring circuit changes. Verify that your PCB layout and heat sinking accommodate the selected substitute package.

Q: Which substitute has the fastest switching characteristics?

A: The SPP18P06PHXKSA1 features the lowest gate charge (28 nC @ 10V), enabling the fastest switching response. Lower gate charge reduces the time required to charge and discharge the gate capacitance, resulting in faster turn-on and turn-off transitions.

Request Quote (Ships tomorrow)