RFP14N05 Equivalent & Substitute Parts

Part Overview

The RFP14N05 is an N-Channel MOSFET manufactured by onsemi, rated for 50V drain-to-source voltage and 14A continuous drain current in a Through Hole TO-220-3 package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement requirements. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and on-resistance characteristics while accommodating packaging and compliance considerations.

Substiute Parts

RFP14N05
onsemiIn Stock: 2129RFP14N05 Datasheet
RFP14N05
Current Part
STP16NF06
STMicroelectronicsIn Stock: 37115STP16NF06 Datasheet
STP16NF06
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Key Parameters

Parameter Value Specification
FET Type N-Channel Device polarity and switching configuration
Drain to Source Voltage (Vdss) 50V Maximum voltage rating between drain and source terminals
Continuous Drain Current (Id) @ 25°C 14A Maximum sustained current capacity at case temperature
On-Resistance (Rds On) @ Id, Vgs 100mOhm @ 14A, 10V Conduction loss characteristic at specified conditions
Gate Threshold Voltage (Vgs(th)) @ Id 4V @ 250µA Gate voltage required for device turn-on
Mounting Type Through Hole PCB assembly and thermal management interface
Package / Case TO-220-3 Physical form factor and pin configuration

Substitute Part Grouping Explanation

Substitution eligibility for the RFP14N05 is determined by the following criteria:

Electrical Compatibility Requirements:

  • FET Type must be N-Channel
  • Drain-to-Source Voltage (Vdss) must equal or exceed 50V
  • Continuous Drain Current (Id) must equal or exceed 14A
  • On-Resistance (Rds On) must not exceed 100mOhm at the specified gate voltage
  • Gate Threshold Voltage (Vgs(th)) must be compatible at 4V nominal

Mechanical Compatibility Requirements:

  • Mounting Type must be Through Hole
  • Package must be TO-220 or TO-220-3 configuration

Compliance Considerations:

  • Product Status: Active status preferred for long-term availability
  • RoHS Compliance: ROHS3 Compliant status preferred for regulatory alignment

The STP16NF06 meets all electrical and mechanical substitution criteria with enhanced performance margins and active product status.

Parameter Comparison

Parameter RFP14N05 (onsemi) STP16NF06 (STMicroelectronics) Compatibility Assessment
FET Type N-Channel N-Channel Matched
Drain to Source Voltage (Vdss) 50V 60V Substitute exceeds requirement
Continuous Drain Current (Id) @ 25°C 14A 16A Substitute exceeds requirement
Rds On (Max) @ Id, Vgs 100mOhm @ 14A, 10V 100mOhm @ 8A, 10V Substitute meets specification at lower current
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA Matched
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 20V 13 nC @ 10V Substitute exhibits lower gate charge
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 25V 315 pF @ 25V Substitute exhibits lower input capacitance
Mounting Type Through Hole Through Hole Matched
Package / Case TO-220-3 TO-220-3 Matched
Product Status Obsolete Active Substitute offers long-term availability
RoHS Status RoHS non-compliant ROHS3 Compliant Substitute meets current regulatory requirements

Engineering Selection Recommendations

STP16NF06 as Primary Substitute:

The STP16NF06 from STMicroelectronics is a direct functional substitute for the RFP14N05. The substitute part exceeds the voltage and current ratings of the original device while maintaining equivalent on-resistance performance. The STP16NF06 is classified as Active product status, ensuring continued availability and manufacturing support compared to the obsolete RFP14N05.

Compliance Advantage:

The STP16NF06 carries ROHS3 Compliant certification, aligning with current regulatory requirements. The RFP14N05 is RoHS non-compliant, presenting potential procurement and regulatory constraints for new designs or manufacturing batches.

Performance Characteristics:

The STP16NF06 demonstrates improved switching characteristics with reduced gate charge (13 nC versus 40 nC) and lower input capacitance (315 pF versus 570 pF). These characteristics result in faster switching transitions and reduced gate drive power requirements, providing performance benefits in switching applications.

Thermal and Mechanical Compatibility:

Both devices utilize identical Through Hole TO-220-3 packaging, ensuring direct mechanical compatibility in existing PCB layouts and thermal management designs. The STP16NF06 specifies 45W maximum power dissipation, supporting equivalent thermal design margins.

Frequently Asked Questions (FAQ)

Q: Can the STP16NF06 directly replace the RFP14N05 in existing designs?

A: Yes. The STP16NF06 meets all electrical substitution criteria with equivalent or superior performance. The identical TO-220-3 package ensures direct mechanical compatibility without PCB modifications. Gate threshold voltage, on-resistance, and drain-source voltage ratings are compatible with RFP14N05 circuit requirements.

Q: What are the key electrical differences between these devices?

A: The STP16NF06 provides higher voltage rating (60V versus 50V) and higher current capacity (16A versus 14A). Gate charge and input capacitance are lower in the STP16NF06, resulting in improved switching speed. On-resistance is equivalent at the specified gate voltage of 10V.

Q: Does the STP16NF06 require circuit modifications?

A: No circuit modifications are required. The STP16NF06 operates within the same gate voltage range and maintains equivalent on-resistance characteristics. The higher voltage and current ratings provide additional design margin without requiring gate drive circuit changes.

Q: What is the significance of the RoHS compliance difference?

A: The RFP14N05 is RoHS non-compliant while the STP16NF06 is ROHS3 Compliant. For new designs and manufacturing environments subject to RoHS regulations, the STP16NF06 is the appropriate selection. Existing designs using RFP14N05 may face procurement constraints as non-compliant components become unavailable.

Q: Are there thermal management considerations when substituting?

A: Both devices are rated for equivalent thermal performance in TO-220-3 packaging. The STP16NF06 specifies 45W maximum power dissipation. Existing thermal design solutions for the RFP14N05 are directly applicable to the STP16NF06 without modification.

Q: How does the lower gate charge of the STP16NF06 affect circuit performance?

A: Lower gate charge (13 nC versus 40 nC) reduces the energy required to switch the device and enables faster switching transitions. This results in reduced gate drive power consumption and improved efficiency in switching applications. Existing gate drive circuits designed for the RFP14N05 will operate with improved performance margins.

Q: Is the TO-220-3 package identical between both devices?

A: Yes. Both the RFP14N05 and STP16NF06 utilize the TO-220-3 package configuration with identical pin assignments and mechanical dimensions. Direct PCB mounting compatibility is confirmed without adapter requirements or layout modifications.

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