RFG60P05E Equivalent & Substitute Parts

Part Overview

The RFG60P05E is a P-Channel MOSFET manufactured by onsemi, rated for 50V drain-to-source voltage and 60A continuous drain current in a Through Hole TO-247-3 package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part delivers 215W maximum power dissipation and operates across a temperature range of -55°C to 175°C.

Substiute Parts

RFG60P05E
onsemiIn Stock: 200328RFG60P05E Datasheet
RFG60P05E
Current Part
IXTH76P10T
IXYSIn Stock: 1404IXTH76P10T Datasheet
IXTH76P10T
Similar

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 60 A (Tc)
Rds On (Max) @ Id, Vgs 30 mOhm @ 60A, 10V
Power Dissipation (Max) 215 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-247-3 Through Hole
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the RFG60P05E is determined by the following critical parameters:

Channel Type: Both the main part and substitute must be P-Channel MOSFETs to maintain circuit polarity and gate drive compatibility.

Voltage Rating (Vdss): The substitute part must have a Vdss rating equal to or greater than 50V. A higher voltage rating provides additional design margin and does not compromise circuit operation in lower-voltage applications.

Current Rating (Id): The substitute must support continuous drain current equal to or greater than 60A at 25°C to ensure adequate current-handling capacity.

On-Resistance (Rds On): The substitute's maximum on-resistance must not exceed the original specification to maintain thermal performance and power efficiency within design limits.

Package Compatibility: The substitute must use a Through Hole TO-247 package variant to ensure mechanical and thermal interface compatibility with existing PCB layouts and heatsink mounting.

Temperature Range: The substitute must support the full operating temperature range of -55°C to 175°C or demonstrate compatibility within the application's actual operating envelope.

The IXTH76P10T meets these substitution criteria with a higher voltage rating (100V), higher current capability (76A), improved on-resistance (25mOhm), and enhanced power dissipation (298W), while maintaining P-Channel topology and Through Hole TO-247 packaging.

Parameter Comparison

Parameter RFG60P05E (Main Part) IXTH76P10T (Substitute) Unit
Manufacturer onsemi IXYS
FET Type P-Channel P-Channel
Drain to Source Voltage (Vdss) 50 100 V
Current - Continuous Drain (Id) @ 25°C 60 76 A (Tc)
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 30 @ 60A, 10V 25 @ 38A, 10V mOhm
Vgs(th) (Max) @ Id 4 @ 250µA 4 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 450 @ 20V 197 @ 10V nC
Vgs (Max) ±20 ±15 V
Input Capacitance (Ciss) (Max) @ Vds 7200 @ 25V 13700 @ 25V pF
Power Dissipation (Max) 215 298 W (Tc)
Operating Temperature Range -55 to 175 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Product Status Obsolete Active
RoHS Status RoHS non-compliant ROHS3 Compliant

Engineering Selection Recommendations

Product Status Consideration: The RFG60P05E is classified as obsolete, whereas the IXTH76P10T is active. Selection of an active substitute part ensures long-term availability and supply chain continuity for production and field service applications.

Compliance Status: The IXTH76P10T is ROHS3 compliant, whereas the RFG60P05E is RoHS non-compliant. For applications subject to RoHS directives or customer compliance requirements, the IXTH76P10T provides regulatory alignment.

Electrical Performance: The IXTH76P10T provides superior electrical characteristics, including higher voltage rating (100V vs. 50V), higher current capability (76A vs. 60A), lower on-resistance at comparable drive conditions (25mOhm vs. 30mOhm), and higher power dissipation capability (298W vs. 215W). These improvements enable the substitute to handle the original application's requirements with additional design margin.

Temperature Range Limitation: The IXTH76P10T operates to 150°C maximum junction temperature, compared to 175°C for the RFG60P05E. Applications requiring sustained operation above 150°C must evaluate thermal management and duty cycle to confirm compatibility.

Gate Drive Compatibility: Both parts share identical threshold voltage specifications (4V @ 250µA) and the same 10V drive voltage for maximum on-resistance specification, ensuring gate drive circuit compatibility without modification.

Frequently Asked Questions (FAQ)

Q: Can the IXTH76P10T directly replace the RFG60P05E in existing designs?

A: The IXTH76P10T is electrically compatible as a substitute for the RFG60P05E in applications operating at or below 50V. The higher voltage rating of the substitute (100V) does not prevent operation in lower-voltage circuits. Both parts share identical threshold voltage and drive voltage specifications. PCB layout and heatsink mounting interfaces are compatible due to identical TO-247-3 packaging. Verify that the application's maximum junction temperature requirement does not exceed 150°C.

Q: What are the key differences in electrical performance?

A: The IXTH76P10T provides higher current capability (76A vs. 60A), lower on-resistance (25mOhm vs. 30mOhm at comparable conditions), and greater power dissipation capacity (298W vs. 215W). Gate charge is significantly lower in the substitute (197nC vs. 450nC), resulting in faster switching characteristics and reduced gate drive power requirements. Input capacitance is higher in the substitute (13700pF vs. 7200pF), which may affect switching speed in high-frequency applications.

Q: Are there package compatibility concerns?

A: Both parts use Through Hole TO-247-3 packaging. Mechanical fit, heatsink mounting interfaces, and PCB footprints are compatible. No package-related modifications to existing designs are required.

Q: What is the impact of the lower maximum junction temperature of the IXTH76P10T?

A: The IXTH76P10T is rated to 150°C maximum junction temperature, compared to 175°C for the RFG60P05E. Applications operating continuously near or above 150°C must evaluate thermal management, duty cycle, and ambient temperature to confirm the substitute remains within specification. For most industrial and consumer applications operating below 125°C junction temperature, this difference has no practical impact.

Q: Does the higher gate charge of the RFG60P05E affect substitution?

A: The IXTH76P10T has significantly lower gate charge (197nC vs. 450nC), which reduces gate drive power dissipation and enables faster switching. This is a performance improvement that does not prevent substitution. Gate drive circuits designed for the higher gate charge of the original part will operate correctly with the lower gate charge of the substitute.

Q: What compliance advantages does the IXTH76P10T provide?

A: The IXTH76P10T is ROHS3 compliant, whereas the RFG60P05E is RoHS non-compliant. For applications subject to RoHS directives, EU market requirements, or customer compliance specifications, the IXTH76P10T eliminates compliance risk. Both parts are REACH unaffected and carry EAR99 ECCN classification.

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