RFD8P05SM P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The RFD8P05SM is a P-Channel MOSFET manufactured by onsemi, rated for 50V drain-to-source voltage with 8A continuous drain current in a surface mount TO-252AA package. This device is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain functional compatibility through matching or exceeding key electrical parameters while accommodating the same or compatible package footprints.

Substiute Parts

RFD8P05SM
onsemiIn Stock: 4593RFD8P05SM Datasheet
RFD8P05SM
Current Part
FQD11P06TM
onsemiIn Stock: 39004FQD11P06TM Datasheet
FQD11P06TM
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SPD18P06PGBTMA1
Infineon TechnologiesIn Stock: 20783SPD18P06PGBTMA1 Datasheet
SPD18P06PGBTMA1
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Key Parameters

Parameter RFD8P05SM Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 8 A (Tc)
Rds On (Max) @ Id, Vgs 300 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 20V
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Product Status Obsolete
RoHS Status RoHS non-compliant

Substitute Part Grouping Explanation

Substitute parts for the RFD8P05SM are selected based on the following substitution criteria:

Primary Compatibility Parameters:

  • FET Type: P-Channel topology
  • Package / Case: TO-252-3 DPAK footprint compatibility
  • Drain to Source Voltage (Vdss): Equal to or greater than 50V
  • Current - Continuous Drain (Id): Equal to or greater than 8A
  • Rds On (Max): Equal to or less than 300mOhm at specified conditions
  • Vgs(th) (Max): Equal to or less than 4V @ 250µA
  • Gate Charge (Qg): Lower values preferred for switching efficiency

Secondary Considerations:

  • Product Status: Active status preferred for long-term availability
  • RoHS Compliance: ROHS3 compliance preferred for regulatory alignment
  • Mounting Type: Surface Mount

The substitute parts FQD11P06TM and SPD18P06PGBTMA1 both exceed the minimum electrical requirements of the RFD8P05SM while maintaining package compatibility and offering improved product status and compliance certifications.

Parameter Comparison

Parameter RFD8P05SM FQD11P06TM SPD18P06PGBTMA1 Unit
FET Type P-Channel P-Channel P-Channel
Drain to Source Voltage (Vdss) 50 60 60 V
Current - Continuous Drain (Id) @ 25°C 8 9.4 18.6 A (Tc)
Rds On (Max) @ Id, Vgs 300 @ 8A, 10V 185 @ 4.7A, 10V 130 @ 13.2A, 10V mOhm
Vgs(th) (Max) @ Id 4 @ 250µA 4 @ 250µA 4 @ 1mA V
Gate Charge (Qg) (Max) @ Vgs 80 @ 20V 17 @ 10V 33 @ 10V nC
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK
Product Status Obsolete Active Active
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

FQD11P06TM (onsemi QFET® Series)

The FQD11P06TM is a direct functional substitute for the RFD8P05SM. It provides 60V Vdss rating (20% margin above the original 50V specification), 9.4A continuous drain current (18% above 8A requirement), and significantly improved Rds On performance at 185mOhm. The device carries Active product status and ROHS3 compliance, addressing the obsolescence and regulatory limitations of the original part. Gate charge is substantially reduced to 17nC, improving switching efficiency. This part is recommended for applications where the original RFD8P05SM specifications are met or exceeded and long-term supply continuity is required.

SPD18P06PGBTMA1 (Infineon SIPMOS® Series)

The SPD18P06PGBTMA1 offers the highest performance margin among available substitutes, with 60V Vdss, 18.6A continuous drain current (232% above the 8A requirement), and the lowest Rds On at 130mOhm. This part is suitable for applications requiring enhanced current handling capacity or thermal performance. The device is Active status with ROHS3 compliance and operates across an extended temperature range to 175°C. This part is recommended for designs where increased current capacity, lower on-resistance, or superior thermal characteristics provide system-level benefits.

Compliance and Availability Considerations

Both substitute parts address the RoHS non-compliance status of the obsolete RFD8P05SM through ROHS3 certification. Both maintain MSL 1 (Unlimited) moisture sensitivity rating, ensuring equivalent handling and storage requirements. Both are available in high inventory quantities, supporting production continuity and cost stability.

Frequently Asked Questions (FAQ)

Q: Can FQD11P06TM or SPD18P06PGBTMA1 be used as direct replacements for RFD8P05SM on existing PCBs?

A: Yes. Both substitute parts use the TO-252-3 DPAK package with identical pinout and footprint compatibility. No PCB layout modifications are required.

Q: What are the key electrical advantages of the substitute parts?

A: Both substitutes provide higher Vdss ratings (60V vs. 50V), enabling operation in higher voltage applications. FQD11P06TM offers improved Rds On (185mOhm vs. 300mOhm) and significantly lower gate charge (17nC vs. 80nC). SPD18P06PGBTMA1 provides the highest current rating (18.6A) and lowest Rds On (130mOhm), reducing conduction losses and heat generation.

Q: Why is the RFD8P05SM classified as obsolete?

A: The RFD8P05SM is listed as obsolete by the manufacturer. Substitute parts with Active status ensure continued availability, manufacturing support, and compliance with current regulatory standards.

Q: Are there differences in gate charge between the substitute parts?

A: Yes. FQD11P06TM has gate charge of 17nC @ 10V, while SPD18P06PGBTMA1 has 33nC @ 10V. Lower gate charge reduces driver power requirements and improves switching speed. FQD11P06TM is preferred for applications sensitive to gate drive power or switching frequency.

Q: Do the substitute parts meet RoHS requirements?

A: Yes. Both FQD11P06TM and SPD18P06PGBTMA1 are ROHS3 compliant, addressing the RoHS non-compliance status of the original RFD8P05SM.

Q: What is the difference in continuous drain current between the substitutes?

A: FQD11P06TM is rated for 9.4A continuous drain current, while SPD18P06PGBTMA1 is rated for 18.6A. SPD18P06PGBTMA1 provides significantly higher current capacity for applications requiring greater power handling.

Q: Are there thermal performance differences?

A: Yes. SPD18P06PGBTMA1 is rated for 80W power dissipation at Tc, compared to FQD11P06TM at 2.5W (Ta) / 38W (Tc). SPD18P06PGBTMA1 is suitable for higher power applications or designs with thermal constraints.

Q: Do the substitute parts have the same moisture sensitivity level?

A: Yes. All three parts, including RFD8P05SM, FQD11P06TM, and SPD18P06PGBTMA1, have MSL 1 (Unlimited) rating, requiring identical handling and storage protocols.

Q: Which substitute part should be selected for a cost-optimized design?

A: FQD11P06TM provides the best balance of performance improvement and cost efficiency, with specifications that exceed the RFD8P05SM across all critical parameters while maintaining a moderate performance margin.

Q: Which substitute part should be selected for maximum performance headroom?

A: SPD18P06PGBTMA1 provides the highest performance margin with the lowest Rds On (130mOhm), highest continuous drain current (18.6A), and extended operating temperature range to 175°C, suitable for demanding applications.

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